Housing for a high-frequency chip

Patent metadata

Field	Value
Publication number	US-10365145-B2
Application number	US-201815914637-A
Country	US
Kind code	B2
Filing date	Mar 7, 2018
Priority date	Mar 8, 2017
Publication date	Jul 30, 2019
Grant date	Jul 30, 2019

Abstract

A housing for a high-frequency chip in a radar device for level measurement is provided, including a high-frequency chip having a high-frequency terminal and a supply terminal; horizontal metal layers; vertical metal connecting lines; and an external supply terminal configured to connect the chip to a circuit board of the device, the chip being attached to one of the horizontal metal layers in an electrically conductive manner, and being embedded in a polymer compound, which is located between the horizontal metal layers, the supply terminal being connected to the external supply terminal via at least one of the horizontal metal layers and via at least one of the vertical metal connecting lines, and the high-frequency terminal being connected to an antenna configured to decouple and receive radar waves, via at least one of the horizontal metal layers and/or via at least one of the vertical metal connections.

First claim

We claim:

1. A housing for a high-frequency chip in a radar device for level measurement, the housing comprising:
a high-frequency chip having a high-frequency terminal and a supply terminal;
a plurality of horizontal metal layers;
a plurality of vertical metal connecting lines; and
an external supply terminal configured to connect the high-frequency chip to a circuit board of the radar device for level measurement,
wherein the high-frequency chip is attached to one of the horizontal metal layers in an electrically conductive manner,
wherein the high-frequency chip is embedded in a polymer compound, which is located between the horizontal metal layers,
wherein the supply terminal of the high-frequency chip is connected to the external supply terminal via at least one of the horizontal metal layers and via at least one of the vertical metal connecting lines, and
wherein the high-frequency terminal of the high-frequency chip is connected to an antenna configured to decouple and receive radar waves, via at least one of the horizontal metal layers and/or via at least one of the vertical metal connections and without the use of bonding wires.

2. The housing according to claim 1 ,
wherein the antenna is integrated in the housing, and
wherein the high-frequency terminal is directly connected to the antenna integrated in the housing via at least one of the horizontal metal layers and via at least one of the vertical metal connections.

3. The housing according to claim 2 , wherein the antenna is planar and is arranged on one of the horizontal metal layers.

4. The housing according to claim 1 ,
further comprising a waveguide,
wherein the high-frequency terminal is connected to the waveguide via at least one of the vertical metal connections and via at least one of the horizontal metal layers, the waveguide being connected to the antenna configured to decouple and receive radar waves.

5. The housing according to claim 4 ,
wherein at least one of the horizontal metal layers is configured to emit a high-frequency signal into a resonant cavity inside the housing, and
wherein dimensions of the resonant cavity are sized such that the high-frequency signal is released from the horizontal metal layer and is converted into a waveguide wave, which is decoupled by means of the waveguide.

6. The housing according to claim 1 , wherein the polymer compound forms an air space directly above the high-frequency chip.

7. The housing according to claim 1 , further comprising a capacitor, arranged inside the housing next to the supply terminal of the high-frequency chip and being connected to the supply terminal of the high-frequency chip via at least one of the vertical connecting lines.

8. The housing according to claim 1 , wherein the high-frequency chip is configured to be operated using a pulsed power supply.

9. The housing according to claim 1 , wherein one of the horizontal metal layers forms a shielding layer of the housing, configured for electromagnetic shielding and for protection against mechanical damage of circuit structures inside the housing.

10. The housing according to claim 9 , wherein the horizontal metal layer is connected to a circuit ground.

11. A radar module for a radar device for level measurement, the radar module comprising a housing according to claim 1 .

12. A housing for a high-frequency chip in a radar device for level measurement, the housing comprising:
a high-frequency chip having a high-frequency terminal and a supply terminal;
a plurality of horizontal metal layers;
a plurality of vertical metal connecting lines; and
an external supply terminal configured to connect the high-frequency chip to a circuit board of the radar device for level measurement,
wherein the high-frequency chip is attached to one of the horizontal metal layers in an electrically conductive manner,
wherein the high-frequency chip is embedded in a polymer compound, which is located between the horizontal metal layers,
wherein the supply terminal of the high-frequency chip is connected to the external supply terminal via at least one of the horizontal metal layers and via at least one of the vertical metal connecting lines,
further comprising a waveguide,
wherein the high-frequency terminal is connected to the waveguide via at least one of the vertical metal connections and via at least one of the horizontal metal layers and without the use of bonding wires, the waveguide being connected to the antenna configured to decouple and receive radar waves.

13. The housing according to claim 12 ,
wherein the antenna is integrated in the housing, and
wherein the high-frequency terminal is directly connected to the antenna integrated in the housing via at least one of the horizontal metal layers and via at least one of the vertical metal connections.

14. The housing according to claim 12 , wherein the polymer compound forms an air space directly above the high-frequency chip.

15. The housing according to claim 12 , further comprising a capacitor, arranged inside the housing next to the supply terminal of the high-frequency chip and being connected to the supply terminal of the high-frequency chip via at least one of the vertical connecting lines.

16. The housing according to claim 12 , wherein the high-frequency chip is configured to be operated using a pulsed power supply.

17. The housing according to claim 12 , wherein one of the horizontal metal layers forms a shielding layer of the housing, configured for electromagnetic shielding and for protection against mechanical damage of circuit structures inside the housing.

Assignees

• Grieshaber Vega Kg

Inventors

• Baur Roland
• Fischer Michael
• Mueller Christoph
• Schultheiss Daniel

Classifications

• H10W44/248

  for antennas · CPC title

• H10W44/243

  for decoupling, e.g. bypass capacitors · CPC title

• H10W44/209

  Vertical interconnections, e.g. vias · CPC title

• H10W76/60

  Seals · CPC title

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title