Monomer, organic layer composition, organic layer, and method of forming patterns

Patent metadata

Field	Value
Publication number	US-10364221-B2
Application number	US-201615176191-A
Country	US
Kind code	B2
Filing date	Jun 8, 2016
Priority date	Jul 6, 2015
Publication date	Jul 30, 2019
Grant date	Jul 30, 2019

Abstract

A monomer, an organic layer composition, an organic layer, and a method of forming a pattern, the monomer being represented by the following Chemical Formula 1:

First claim

What is claimed is:

1. An organic layer composition, comprising:
a monomer represented by one of Chemical Formulae 1-1, 1-2, and 1-4; and
a solvent,

wherein, in Chemical Formula 1-1,
A x and A y are each independently a substituted or unsubstituted cyclic group of one of the following compounds:

Z a and Z b are each independently NR a , in which R a is hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, or a combination thereof,
R x and R y are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof, and
X 0 is a hydroxy group,

wherein, in Chemical Formulae 1-2 and 1-4,
A x and A y are each independently a substituted or unsubstituted cyclic group of one of the following compounds:

Z a and Z b are each independently NR a , O, or S, in which R a is hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, or a combination thereof,
R x and R y are each independently hydrogen, a substituted or unsubstituted C6 to C30 aryl group, a hydroxy group, a halogen atom, or a combination thereof, and
X 0 is a hydroxy group.

2. The organic layer composition as claimed in claim 1 , wherein the monomer has a molecular weight of about 200 to about 5,000.

3. The organic layer composition as claimed in claim 1 , wherein the monomer is present in an amount of about 0.1 wt % to about 50 wt %, based on a total weight of the organic layer composition.

4. An organic layer provided by curing the organic layer composition as claimed in claim 1 .

5. The organic layer as claimed in claim 4 , wherein the organic layer is a hardmask layer.

6. A method of forming a pattern, the method comprising:
providing a material layer on a substrate,
applying the organic layer composition as claimed in claim 1 on the material layer,
heat-treating the organic layer composition to form a hardmask layer,
forming a silicon-containing thin layer on the hardmask layer,
forming a photoresist layer on the silicon-containing thin layer,
exposing and developing the photoresist layer to form a photoresist pattern,
selectively removing the silicon-containing thin layer and the hardmask layer using the photoresist pattern to expose a part of the material layer, and
etching an exposed part of the material layer.

7. The method as claimed in claim 6 , wherein applying the organic layer composition includes performing a spin-on coating method.

8. The method as claimed in claim 6 , further comprising forming a bottom antireflective coating before providing the photoresist layer.

9. The method as claimed in claim 6 , wherein the heat-treating is performed at about 100° C. to about 600° C.

10. An organic layer composition, comprising:
a monomer; and
a solvent,
wherein the monomer is one of the following compounds:

11. An organic layer provided by curing the organic layer composition as claimed in claim 10 .

Assignees

• Samsung Sdi Co Ltd

Inventors

• Kwon Hyo Young
• KANG Sunhae
• Namgung Ran
• Nam Younhee
• Heo Yumi
• Kim Young Min
• Mun Soohyoun

Classifications

• C07D333/74

  Naphthothiophenes · CPC title

• C07D219/00

  Heterocyclic compounds containing acridine or hydrogenated acridine ring systems · CPC title

• C07D307/80

  Radicals substituted by oxygen atoms · CPC title

• C07D209/82

  Carbazoles; Hydrogenated carbazoles · CPC title

• C09D179/04

  Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors · CPC title