Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography

US10359698B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10359698-B2
Application numberUS-59215609-A
CountryUS
Kind codeB2
Filing dateNov 19, 2009
Priority dateNov 19, 2008
Publication dateJul 23, 2019
Grant dateJul 23, 2019

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  1. Title

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  2. Abstract

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

Official abstract text for this publication.

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises one or more materials that have hetero-substituted carbocyclic aryl groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for processing a photoresist composition, comprising: (a) applying on a substrate a layer of a photoresist composition comprising: (i) one or more resins, (ii) a photoactive component, and (iii) one or more materials that are distinct from and substantially non-mixable with the one or more resins, and the one or more materials comprise 1) hetero-substituted multi-ring carbocyclic aryl groups and 2) one or more C(OH)(CF 3 ) 2 moieties; and (b) immersion exposing the photoresist composition layer to radiation activating for the photoresist composition wherein immersion fluid directly contacts the photoresist composition layer; wherein the one or more materials migrate to top or upper portions of the photoresist coating layer. 2. The method of claim 1 wherein the one or more materials (iii) comprise resins that comprise hetero-substituted multi-ring carbocyclic aryl groups. 3. The method of claim 2 wherein the one or more resins (iii) comprise hydroxy naphthyl groups. 4. The method of claim 1 , wherein the one or more substantially non-mixable materials comprise one or more photoacid labile groups. 5. A method for processing a photoresist composition, comprising: (a) applying on a substrate a layer of a photoresist composition comprising: (i) one or more resins, (ii) a photoactive component, and (iii) one or more materials that are distinct from and substantially non-mixable with the one or more resins, and the one or more materials comprise 1) hetero-substituted multi-ring carbocyclic aryl groups, 2) one or more C(OH)(CF 3 ) 2 moieties and 3) silicon substitution; and (b) immersion exposing the photoresist composition layer to radiation activating for the photoresist composition wherein immersion fluid directly contacts the photoresist composition layer. 6. The method of claim 5 , wherein the one or more substantially non-mixable materials comprise one or more photoacid labile groups. 7. A method for processing a photoresist composition, comprising: (a) applying on a substrate a layer of a photoresist composition comprising: (i) one or more resins, (ii) a photoactive component, and (iii) one or more resins that (1) are distinct from and substantially non-mixable with the (i) one or more resins, and (2) comprise 1) hetero-substituted multi-ring carbocyclic aryl groups, and 2) one or more C(OH)(CF 3 ) 2 groups; and (b) immersion exposing the photoresist composition layer to radiation activating for the photoresist composition wherein immersion fluid directly contacts the photoresist composition layer; wherein the one or more materials migrate to top or upper portions of the photoresist coating layer. 8. The method of claim 7 wherein the (iii) one or more resins comprise hydroxyl naphthyl.

Assignees

Inventors

Classifications

  • the macromolecular compound being present in a chemically amplified negative photoresist composition · CPC title

  • in the presence of a fluid, e.g. immersion; using fluid cooling means · CPC title

  • with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title

  • with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

  • G03F7/0048Primary

    characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents · CPC title

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What does patent US10359698B2 cover?
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises one or more materials that have hetero-substituted carbocyclic aryl groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lit…
Who is the assignee on this patent?
Wang Deyan, Xu Cheng Bai, Barclay George G, and 1 more
What technology area does this patent fall under?
Primary CPC classification G03F7/0048. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jul 23 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).