Nickel solution for forming film and film-forming method using same

US10358734B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10358734-B2
Application numberUS-201415026366-A
CountryUS
Kind codeB2
Filing dateOct 2, 2014
Priority dateOct 3, 2013
Publication dateJul 23, 2019
Grant dateJul 23, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

Official abstract text for this publication.

A nickel solution for forming a film that can suppress generation of hydrogen gas between a solid electrolyte membrane and a substrate while the solid electrolyte membrane and the substrate are brought into contact with each other. The pH of the nickel solution for forming a film is in the range of 4.2 to 6.1. The nickel solution for forming a film further contains a pH buffer solution that has a buffer function in the range of the pH and does not form insoluble salts or complexes with the nickel ions during formation of the film.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for forming a nickel film comprising: disposing a solid electrolyte membrane between an anode and a substrate that functions as a cathode, bringing a nickel solution containing a pH buffer solution into contact with the solid electrolyte membrane, thereby supplying nickel ions to the solid electrolyte membrane, bringing the solid electrolyte membrane into contact with the substrate, and applying a voltage across the anode and the substrate to deposit nickel onto a surface of the substrate from the nickel ions contained in the nickel solution in the solid electrolyte membrane to form a nickel film containing the nickel on the surface of the substrate, wherein a pH of the nickel solution is in a range of 4.2 to 6.1, wherein the pH buffer solution has a buffer function in the range of the pH and does not form insoluble salts or complexes with the nickel ions during formation of the film, the pH buffer solution is an acetic acid-acetate buffer solution or a succinic acid-succinate buffer solution and the pH buffer solution contains no sodium ions or potassium ions, and wherein the nickel ions in the nickel solution move through the solid electrolyte membrane from a side of the solid electrolyte membrane facing the anode to a side of the solid electrolyte membrane facing the cathode. 2. The method according to claim 1 , wherein cations contained in the pH buffer solution are nickel ions or ions of metal with lower ionization tendency than nickel. 3. The method according to claim 1 , wherein the pH buffer solution is one of an acetic acid-nickel acetate buffer solution or a succinic acid-nickel succinate buffer solution. 4. The method according to claim 1 , further comprising flowing the nickel solution containing the pH buffer solution to the inside of the anode. 5. The method according to claim 1 , wherein the anode is porous. 6. The method according to claim 1 , wherein the solid electrolyte membrane is impregnated with nickel ions. 7. The method according to claim 1 , wherein the solid electrolyte membrane is a fluorine-based resin, a hydrocarbon-based resin, a polyamic acid resin, or a resin with an ion exchange function. 8. The method according to claim 1 , wherein the solid electrolyte membrane has a recess that covers the surface of the anode facing the solid electrolyte membrane.

Assignees

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Classifications

  • Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

  • Semiconductors · CPC title

  • Cell separation, e.g. membranes, diaphragms · CPC title

  • Electricity · mapped topic

  • Electroplating: Baths therefor · CPC title

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What does patent US10358734B2 cover?
A nickel solution for forming a film that can suppress generation of hydrogen gas between a solid electrolyte membrane and a substrate while the solid electrolyte membrane and the substrate are brought into contact with each other. The pH of the nickel solution for forming a film is in the range of 4.2 to 6.1. The nickel solution for forming a film further contains a pH buffer solution that has…
Who is the assignee on this patent?
Toyota Motor Co Ltd
What technology area does this patent fall under?
Primary CPC classification C25D5/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jul 23 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).