Wafer dividing method

Patent metadata

Field	Value
Publication number	US-10354919-B2
Application number	US-201615348071-A
Country	US
Kind code	B2
Filing date	Nov 10, 2016
Priority date	Nov 16, 2015
Publication date	Jul 16, 2019
Grant date	Jul 16, 2019

Abstract

A method for dividing a wafer having a wiring layer including Cu on the front side, the front side of the wafer being partitioned by a plurality of crossing division lines to define a plurality of separate regions where a plurality of devices are formed. The method includes a laser processed groove forming step of applying a laser beam to the wiring layer along each division line to thereby remove the wiring layer along each division line and form a laser processed groove along each division line, a cutting step of using a cutting blade having a thickness smaller than the width of each laser processed groove to fully cut the wafer along each laser processed groove after performing the laser processed groove forming step, and a dry etching step of dry-etching at least each laser processed groove after performing the laser processed groove forming step.

First claim

What is claimed is:

1. A wafer dividing method for dividing a wafer having a wiring layer including Cu on a front side, the front side of said wafer being partitioned by a plurality of crossing division lines to define a plurality of separate regions where a plurality of devices are formed, said wafer dividing method comprising:
a protective film forming step of forming a protective film for protecting the front side of said wafer, said protective film being formed of a water-soluble resin;
a laser processed groove forming step of applying a laser beam having an absorption wavelength to said wafer, to said wiring layer along each division line to thereby remove said wiring layer along each division line and form a laser processed groove along each division line after performing said protective film forming step, wherein the laser processed groove extends beyond the wiring layer and into a substrate of the wafer, wherein the substrate of the wafer comprises a silicon substrate, and further wherein a focal point of the laser beam is set at a vertical position slightly below an upper surface of the silicon substrate;
a dry etching step of dry-etching side walls of each laser processed groove to remove debris including Cu adhered to the side walls of the laser processed groove after performing said laser processed groove forming step;
a protective film removing step of supplying water to said protective film formed of the water-soluble resin; and
a cutting step of using a cutting blade having a thickness smaller than the width of each laser processed groove and supplying cutting water to fully cut said wafer along each laser processed groove after performing said laser processed groove forming step,
wherein said dry etching step is carried out by introducing into an etching chamber an etching gas selected from a group consisting of SF 6 , CF 4 , C 2 F 6 and C 2 F 4 together with rare gas as a plasma assisting gas; and
wherein said protective film removing step is carried out simultaneously with said cutting step and said protective film is removed by said cutting water; and
wherein the laser processed groove forming step comprises:
a first sub-step of forming a pair of first laser processed grooves within each division line, thereby leaving a wiring layer between said pair of first laser processed grooves, wherein each of the first laser processed grooves is of a first width and further wherein the first laser processed grooves each extend beyond the wiring layer and into the substrate of the wafer; and
a second sub-step of forming a second laser processed groove to remove the wiring layer between said pair of first laser processed grooves, wherein the second laser processed groove is of a width that is greater than two times the first width.

2. The method of claim 1 , wherein the dry-etching step is performed under the following conditions:
Etching gas: SF 6 gas
Plasma assisting gas: Ar gas
Etching gas supply rate: 1500 cc/minute
Plasma assisting gas supply rate: 1000 cc/minute
RF power: 3 kW.

3. The method of claim 1 , wherein the width of the focused spot diameter of the laser beam associated with the second sub-step of forming a second laser processed groove is wider than the width of the focused spot diameter of the laser beam associated with the first sub-step of forming a pair of first laser processed grooves.

Assignees

• Disco Corp

Inventors

• Tabuchi Tomotaka
• Odanaka Kentaro
• Kumazawa Satoshi
• Ryo Senichi
• Ogawa Yuki

Classifications

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P54/00 Primary

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• B23K26/032

  using optical means · CPC title