X-ray scatterometry metrology for high aspect ratio structures

Patent metadata

Field	Value
Publication number	US-10352695-B2
Application number	US-201615230336-A
Country	US
Kind code	B2
Filing date	Aug 5, 2016
Priority date	Dec 11, 2015
Publication date	Jul 16, 2019
Grant date	Jul 16, 2019

Abstract

Methods and systems for characterizing dimensions and material properties of high aspect ratio, vertically manufactured devices using transmission, small-angle x-ray scattering (T-SAXS) techniques are described herein. Exemplary structures include spin transfer torque random access memory (STT-RAM), vertical NAND memory (V-NAND), dynamic random access memory (DRAM), three dimensional FLASH memory (3D-FLASH), resistive random access memory (Re-RAM), and PC-RAM. In one aspect, T-SAXS measurements are performed at a number of different orientations that are more densely concentrated near the normal incidence angle and less densely concentrated at orientations that are further from the normal incidence angle. In a further aspect, T-SAXS measurement data is used to generate an image of a measured structure based on the measured intensities of the detected diffraction orders. In another further aspect, a metrology system is configured to generate models for combined x-ray and optical measurement analysis.

First claim

What is claimed is:

1. A metrology system comprising:
an x-ray illumination source configured to generate an amount of x-ray radiation;
an x-ray illumination optics subsystem configured to illuminate a measurement target formed on a wafer surface with a focused beam of the amount of x-ray radiation at a plurality of different orientations with respect to the measurement target, wherein the measurement target includes one or more structures, and wherein the plurality of different orientations are more densely concentrated near normal to the wafer surface and less densely concentrated at orientations that are further from normal to the wafer surface;
an x-ray detector configured to detect one or more intensities each associated with one or more diffraction orders of an amount of radiation scattered from the measurement target in response to the incident beam of x-ray radiation at each orientation; and
a computing system configured to
determine a value of a parameter of interest associated with a model of the measurement target based on the detected intensities of the diffraction orders at the plurality of different orientations.

2. The metrology system of claim 1 , wherein the parameter of interest is a shape parameter.

3. The metrology system of claim 1 , wherein the one or more structures has an overall depth of at least one micrometer.

4. The metrology system of claim 3 , wherein the one or more structures is any of a spin transfer torque random access memory (STT-RAM), a three dimensional NAND memory (3D-NAND), a dynamic random access memory (DRAM), a three dimensional FLASH memory (3D-FLASH), resistive random access memory (Re-RAM), and a phase change random access memory (PC-RAM).

5. The metrology system of claim 1 , wherein the one or more structures has an aspect ratio of at least twenty, wherein the aspect ratio is defined as a maximum height dimension divided by a maximum lateral extent dimension.

6. The metrology system of claim 1 , wherein the one or more structures comprise alternating layers of different materials.

7. The metrology system of claim 1 , wherein the x-ray illumination source includes any of a liquid metal jet x-ray illumination source, a solid anode x-ray illumination source, and an inverse Compton x-ray illumination source.

8. The metrology system of claim 1 , wherein the measurement target is located within a scribe line area or within an active die area.

9. The metrology system of claim 1 , wherein the determining the parameter of interest involves a fitting analysis of the detected intensities of the diffraction orders with a geometrically parameterized response model.

10. The metrology system of claim 9 , wherein the computing system is further configured to determine a multi-dimensional image of the measurement target based on the detected intensities of the diffraction orders at the plurality of different orientations.

11. The metrology system of claim 10 , wherein the computing system is further configured to modify the geometrically parameterized response model of the measurement target based on a difference between the image of the measurement target and the parameter of interest.

12. The metrology system of claim 1 , wherein the determining of the value of the parameter of interest involves a combined fitting analysis of the detected intensities of the diffraction orders at the plurality of different orientations and detected optical intensities with a combined, geometrically parameterized response model, wherein the optical intensities are measured by an optical metrology tool.

13. A method comprising:
illuminating a measurement target formed on a wafer surface with a focused beam of x-ray radiation at a plurality of different orientations with respect to the measurement target, wherein the measurement target includes one or more structures, and wherein the plurality of different orientations are more densely concentrated near normal to the wafer surface and less densely concentrated at orientations that are further from normal to the wafer surface;
detecting one or more intensities each associated with one or more diffraction orders of an amount of radiation scattered from the measurement target in response to the incident beam of x-ray radiation at each orientation; and
determining a value of a parameter of interest associated with a model of the measurement target based on the detected intensities of the diffraction orders at the plurality of different orientations.

14. The method of claim 13 , wherein the one or more structures has an overall depth of at least one micrometer.

15. The method of claim 13 , wherein the one or more structures has an aspect ratio of at least twenty, wherein the aspect ratio is defined as a maximum height dimension divided by a maximum lateral extent dimension.

16. The method of claim 13 , wherein the determining the parameter of interest involves a fitting analysis of the detected intensities of the diffraction orders with a geometrically parameterized response model.

17. The method of claim 16 , further comprising:
determining a multi-dimensional image of the measurement target based on the detected intensities of the diffraction orders at the plurality of different orientations.

18. The method of claim 17 , further comprising:
modifying the geometrically parameterized response model of the measurement target based on a difference between the image of the measurement target and the parameter of interest.

19. The method of claim 13 , wherein the determining of the value of the parameter of interest involves a combined fitting analysis of the detected intensities of the diffraction orders at the plurality of different orientations and detected optical intensities with a combined, geometrically parameterized response model, wherein the optical intensities are measured by an optical metrology tool.

20. A metrology system comprising:
an x-ray illumination source configured to generate an amount of x-ray radiation;
an x-ray illumination optics subsystem configured to illuminate a measurement target formed on a wafer surface with a focused beam of the amount of x-ray radiation at a plurality of different orientations with respect to the measurement target, wherein the measurement target includes one or more structures, and wherein the plurality of different orientations are more densely concentrated near normal to the wafer surface and less densely concentrated at orientations that are further from normal to the wafer surface;
an x-ray detector configured to detect one or more intensities each associated with one or more diffraction orders of an amount of radiation scattered from the measurement target in response to the incident beam of x-ray radiation at each orientation; and
a non-transitory, computer-readable medium, comprising:
code for causing a computing system to determine a value of a parameter of interest associated with a model of the measurement target based on the detected intensities of the diffraction orders at the plurality of orientations.

21. The metrology system of claim 20 , wherein the determining of the value of the parameter of interest involves a combined fitting analysis of the detected intensities of the diffraction orders at the plurality of different orientations and detected optical intensities with a combined, geometrically parameterized response model, wherein the optical intensities are measured by an optical metrology tool.

Assignees

• Kla Tencor Corp

Inventors

• Dziura Thaddeus Gerard
• Gellineau Antonio Arion
• Shchegrov Andrei V

Classifications

• G01N23/207

  Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions · CPC title

• G03F7/7085

  Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load · CPC title

• G01N23/083

  the radiation being X-rays · CPC title

• G01B2210/56

  Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth · CPC title

• G01N23/2055

  Analysing diffraction patterns · CPC title