Post chemical mechanical polishing formulations and method of use

Patent metadata

Field	Value
Publication number	US-10351809-B2
Application number	US-201615540293-A
Country	US
Kind code	B2
Filing date	Jan 5, 2016
Priority date	Jan 5, 2015
Publication date	Jul 16, 2019
Grant date	Jul 16, 2019

Abstract

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

First claim

What is claimed is:

1. A composition comprising at least one organic amine, at least one solvent, at least one quaternary base, at least one complexing agent, at least one reducing agent, optionally at least one additional etchant, and optionally at least one cleaning additive, wherein the cleaning composition is substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide.

2. The composition of claim 1 , wherein the at least one organic amine comprises a species having the general formula NR 1 R 2 R 3 , wherein R 1 , R 2 and R 3 may be the same as or different from one another and are selected from the group consisting of hydrogen, straight-chained or branched C 1 -C 6 alkyl, straight-chained or branched C 1 -C 6 alcohol, and straight chained or branched ethers having the formula R 4 —O—R 5 , where R 4 and R 5 may be the same as or different from one another and are selected from the group consisting of C 1 -C 6 alkyls.

3. The composition of claim 1 , wherein the at least one organic amine comprises a species selected from the group consisting of aminoethylethanolamine, N-methylaminoethanol, aminoethoxyethanol, dimethylaminoethoxyethanol, diethanolamine, N-methyldiethanolamine, monoethanolamine, triethanolamine, 1-amino-2-propanol, 3-amino-1-propanol, diisopropylamine, isopropylamine, 2amino-1-butanol, isobutanolamine, other C 1 -C 8 alkanolamines, triethylenediamine, ethylenediamine, hexamethylenediamine, diethylenetriamine, triethylamine, trimethylamine, 1-methoxy-2aminoethane, diglycolamine, morpholine, and combinations thereof.

4. The composition of claim 1 , wherein the at least one quaternary base has the formula NR 1 R 2 R 3 R 4 OH or PR 1 R 2 R 3 R 4 OH, wherein R 1 , R 2 , R 3 and R 4 may be the same as or different from one another and are selected from the group consisting of hydrogen, straight-chained or branched C 2 -C 6 alkyl, and substituted or unsubstituted C 6 -C 10 aryl.

5. The composition of claim 1 , wherein the at least one quaternary base comprises a species selected from the group consisting of tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide (TBAH), tributylmethylammonium hydroxide (TBMAH), benzyltrimethylammonium hydroxide (BTMAH), ethyltrimethylammonium hydroxide, choline hydroxide, tris(2-hydroxyethyl)methyl ammonium hydroxide, diethyldimethylammonium hydroxide, tetrabutylphosphonium hydroxide (TBPH), tetramethylphosphonium hydroxide, tetraethylphosphonium hydroxide, tetrapropylphosphonium hydroxide, benzyltriphenylphosphonium hydroxide, methyl triphenylphosphonium hydroxide, ethyl triphenylphosphonium hydroxide, N-propyl triphenylphosphonium hydroxide, and combinations thereof.

6. The composition of claim 1 , wherein the at least one complexing agent comprises a species selected from the group consisting of acetic acid, acetone oxime, acrylic acid, adipic acid, alanine, arginine, asparagine, aspartic acid, betaine, dimethyl glyoxime, formic acid, fumaric acid, gluconic acid, glutamic acid, glutamine, glutaric acid, glyceric acid, glycerol, glycolic acid, glyoxylic acid, histidine, iminodiacetic acid, isophthalic acid, itaconic acid, lactic acid, leucine, lysine, maleic acid, maleic anhydride, malic acid, malonic acid, mandelic acid, 2,4-pentanedione, phenylacetic acid, phenylalanine, phthalic acid, proline, propionic acid, pyrocatecol, pyromellitic acid, quinic acid, serine, sorbitol, succinic acid, tartaric acid, terephthalic acid, trimellitic acid, trimesic acid, tyrosine, valine, xylitol, ethylenediamine, oxalic acid, tannic acid, benzoic acid, ammonium benzoate, catechol, pyrogallol, resorcinol, hydroquinone, cyanuric acid, barbituric acid, 1,2dimethylbarbituric acid, pyruvic acid, propanethiol, benzohydroxamic acids, tetraethylenepentamine (TEPA), 4-(2-hydroxyethyl)morpholine (HEM), N-aminoethylpiperazine (N-AEP), ethylenediaminetetraacetic acid (EDTA), 1,2-cyclohexanediamine-N,N,N′,N′-tetraacetic acid, (CDTA), glycine/ascorbic acid, iminodiacetic acid (IDA), 2-(hydroxyethyl)iminodiacetic acid (HIDA), nitrilotriacetic acid, thiourea, 1,1,3,3-tetramethylurea, urea, urea derivatives, glycine, alanine, arginine, asparagine, aspartic acid, cysteine, glutaric acid, glutamic acid, glutamine, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, piperadine, N-(2-aminoethyl) piperadine, proline, pyrrolidine, serine, threonine, tryptophan, tyrosine, valine, phosphonic acid, 1hydroxyethylidene-1,1-diphosphonic acid (HEDP), 1,5,9-triazacyclododecane-N,N′,N″tris(methylenephosphonic acid) (DOTRP), 1,4,7,10-tetraazacyclododecane-N,N′,N″,N′″tetrakis(methylenephosphonic acid) (DOTP), nitrilotris(methylene)triphosphonic acid, diethylenetriaminepenta(methylenephosphonic acid) (DETAP), aminotri(methylenephosphonic acid), is(hexamethylene)triamine phosphonic acid, 1,4,7-triazacyclononane-N,N′,N″tris(methylenephosphonic acid (NOTP), salts and derivatives thereof, and combinations thereof.

7. The composition of claim 6 , wherein the at least one complexing agent comprises cysteine, oxalic acid, or a combination of cysteine and oxalic acid.

8. The composition of claim 1 , wherein the at least one reducing agent comprises a species selected from the group consisting of ascorbic acid, L(+)-ascorbic acid, isoascorbic acid, ascorbic acid derivatives, formamidinesulfinic acid, cysteine, and any combination thereof.

9. The composition of claim 1 , comprising the at least one additional etchant, wherein the at least one additional etchant is selected from the group consisting of morpholine, diglycolamine, 3-butoxypropylamine, propylene glycol monobutyl ether, hydroxyethylmorpholine, hydroxypropylmorpholine, aminoethylmorpholine, aminopropylmorpholine, pentamethyldiethylenetriamine (PMDETA), trimethylaminoethylethanolamine, trimethylaminopropylethanolamine, and combinations thereof.

10. The composition of claim 1 , comprising the at least one cleaning additive, wherein the at least one cleaning additive is selected from the group consisting of hydroxypropylcellulose, hydroxyethylcellulose, carboxymethylcellulose sodium carboxymethylcellulose (Na CMC), polyvinylpyrrolidone (PVP), any polymer made using the Nvinyl pyrrolidone monomer, polyacrylic acid esters and analogoues of polyacrylic acid esters, polyalanine, polyleucine, polyglycine, polyamidohydroxyurethanes, polylactones, polyacrylamide, Xanthan gum, chitosan, polyethylene oxide, polyvinyl alcohol, polyvinyl acetate, polyacrylic acid, polyethyleneimine, sorbitol, xylitol, esters of anhydrosorbitols, secondary alcohol ethoxylates, and combinations thereof.

11. The composition of claim 1 , further comprising at least one metal corrosion inhibitor selected from the group consisting of adenosine, adenine, pyrazole, 1,2,4-triazole, 1,2,3triazole, imidazole, 1H-pyrazole-4-carboxylic acid, 3-amino-5-tert-butyl-1H-pyrazole, 5-amino-1Htetrazole, 4-methylpyrazole, 2-mercaptobenzimidazole, 2-amino-5-(ethylthio)-1,3,4-thiadiazole, 2amino-5-ethyl-1,3,4-thiadiazole, derivatives thereof, and combinations thereof.

12. The composition of claim 1 , comprising cysteine in a range from about 0.00005 wt % to about 0.2 wt %, based on the total weight of the composition.

13. The cleaning composition of claim 1 , wherein the at least one solvent comprises water.

14. The cleaning composition of claim 1 , wherein the composition is substantially devoid of at least one of oxidizing agents (e.g., hydrogen peroxide); fluoride-containing sources; abrasive materials; alkali and/or alkaline earth metal bases; tetramethylammonium hydroxide; derivatives of cysteine; surfactants; sulfonium compounds; amidoxime compou

Assignees

• Entegris Inc

Inventors

• Thomas Elizabeth
• Frye Donald
• Liu Jun
• White Michael
• White Danela
• Wang chao-yu

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P70/277

  the processing being a planarisation of conductive layers · CPC title

• H10P70/234 Primary

  the processing being the formation of vias or contact holes · CPC title

• H10W20/062

  by smoothing of conductive parts, e.g. by planarisation · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title