Thermosetting resin composition, method of producing thermal conductive sheet, and power module

Patent metadata

Field	Value
Publication number	US-10351728-B2
Application number	US-201414896235-A
Country	US
Kind code	B2
Filing date	Jan 10, 2014
Priority date	Jun 14, 2013
Publication date	Jul 16, 2019
Grant date	Jul 16, 2019

Abstract

A thermosetting resin composition containing a thermosetting resin and an inorganic filler, in which the inorganic filler contains secondary sintered particles (A) formed of primary particles of boron nitride, which have an aspect ratio of 10 to 20, and secondary sintered particles (B) formed of the primary particles of boron nitride, which have an aspect ratio of 2 to 9. The thermosetting resin composition can produce a thermal conductive sheet that has excellent filling property of the inorganic filler, and excellent thermal conductivity, adhesiveness and electrical insulating properties.

First claim

The invention claimed is:

1. A thermosetting resin composition, containing
a thermosetting resin and
an inorganic filler,
wherein
the inorganic filler contains
secondary sintered particles (A), which are isotropic aggregates of primary particles of boron nitride which have an aspect ratio of 10 to 20, and
secondary sintered particles (B), which are isotropic aggregates of primary particles of boron nitride which have an aspect ratio of 2 to 9;

a specific surface area of the secondary sintered particles (A) is 4 m 2 /g to 15 m 2 /g; and
a specific surface area of the secondary sintered particles (B) is less than 4 m 2 /g.

2. A thermosetting resin composition, containing
a thermosetting resin and
an inorganic filler,
wherein
the inorganic filler contains
secondary sintered particles (A), which are isotropic aggregates of primary particles of boron nitride which have an aspect ratio of 10 to 20, and
secondary sintered particles (B), which are isotropic aggregates of primary particles of boron nitride which have an aspect ratio of 2 to 9;

a compressive strength of the secondary sintered particles (A) is 6 MPa or more; and
a compressive strength of the secondary sintered particles (B) is 3 MPa to 5 MPa.

3. The thermosetting resin composition according to claim 1 , wherein a ratio of an average particle size of the secondary sintered particles (A) to that of the secondary sintered particles (B) is 0.8 to 10.

4. A thermosetting resin composition, containing
a thermosetting resin and
an inorganic filler,
wherein
the inorganic filler contains
secondary sintered particles (A), which are isotropic aggregates of primary particles of boron nitride which have an aspect ratio of 10 to 20, and
secondary sintered particles (B), which are isotropic aggregates of primary particles of boron nitride which have an aspect ratio of 2 to 9; and

an average particle size of the secondary sintered particles (A) is 20 μm to 110 μm.

5. The thermosetting resin composition according to claim 1 , wherein an average length of the primary particles of boron nitride, which form the secondary sintered particles (A) and the secondary sintered particles (B), is 0.1 μm to 30 μm.

6. The thermosetting resin composition according to claim 1 , wherein a volume ratio of the secondary sintered particles (A) to the secondary sintered particles (B) is 5:95 to 90:10.

7. The thermosetting resin composition according to claim 1 , wherein a content of the inorganic filler in a solid content of the thermosetting resin composition is 40% by volume to 80% by volume.

8. A method of producing a thermal conductive sheet, the method comprising
coating and drying the thermosetting resin composition according to claim 1 on a mold-releasing base material to obtain a coated and dried material, and
curing the coated and dried material while pressurizing under a pressing pressure of 0.5 MPa to 50 MPa.

9. A power module, comprising
a power semiconductor element mounted on a first heat dissipation member,
a second heat dissipation member that externally dissipates heat generated by the power semiconductor element, and
the thermal conductive sheet that transmits the heat generated by the power semiconductor element from the first heat dissipation member to the second heat dissipation member and is produced according to the method according to claim 8 .

10. The power module according to claim 9 , wherein the power semiconductor element is formed of a wide band gap semiconductor.

11. The power module according to claim 10 , wherein the wide band gap semiconductor is silicon carbide, a gallium nitride-based material or diamond.

Assignees

• Mitsubishi Electric Corp

Inventors

• Takahara Mariko
• Mimura Kenji
• Nakamura Yurie
• Masaki Motoki

Classifications

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/351

  Materials of die-attach connectors · CPC title

• H10W72/325

  Die-attach connectors having a filler embedded in a matrix · CPC title

• H10W90/811

  Multiple chips on leadframes · CPC title

• H10W70/02

  of conductive package substrates serving as an interconnection, e.g. of metal plates (manufacture or treatment of leadframes H10W70/04) · CPC title