Metal alkoxide compound, thin-film-forming material, method for producing thin film, and alcohol compound
US-9896468-B2 · Feb 20, 2018 · US
Alkoxide compound, raw material for forming thin film, method for manufacturing thin film, and alcohol compound
US10351584B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10351584-B2 |
| Application number | US-201515303845-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 30, 2015 |
| Priority date | Apr 21, 2014 |
| Publication date | Jul 16, 2019 |
| Grant date | Jul 16, 2019 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
An alkoxide compound is represented by General Formula (I) below: wherein R 1 to R 3 each independently represent hydrogen, a C 1-12 hydrocarbon group, etc.; R 4 represents a C 1-12 hydrocarbon group, etc.; L represents hydrogen, halogen, a hydroxyl group, an amino group, an azi group, a phosphido group, a nitrile group, a carbonyl group, a C 1-12 hydrocarbon group, etc.; and M represents a metal atom or a silicon atom, n represents an integer of 1 or more, m represents an integer of 0 or more, and n+m represents the valence of the metal atom or silicon atom.
First claim
Opening claim text (preview).
The invention claimed is: 1. An alkoxide compound of the Formula No. 43 or the Formula No. 49 below: wherein in the Formula No. 43 and the Formula No. 49, Et represents ethyl and Me represents methyl. 2. A raw material for forming a thin film, comprising the alkoxide compound according to claim 1 . 3. A method for manufacturing a thin film, comprising: introducing a vapor including an alkoxide compound obtained by vaporizing the raw material for forming a thin film according to claim 2 into a film formation chamber in which a substrate is disposed; and forming, on a surface of the substrate, a thin film including a metal atom by inducing decomposition and/or chemical reaction of the alkoxide compound.
Assignees
Inventors
Classifications
the conductive layers comprising transition metals · CPC title
Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title
using a gas or vapour · CPC title
of electrodes ohmically coupled to a semiconductor · CPC title
- C07C251/08Primary
being acyclic · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US10351584B2 cover?
- An alkoxide compound is represented by General Formula (I) below: wherein R 1 to R 3 each independently represent hydrogen, a C 1-12 hydrocarbon group, etc.; R 4 represents a C 1-12 hydrocarbon group, etc.; L represents hydrogen, halogen, a hydroxyl group, an amino group, an azi group, a phosphido group, a nitrile group, a carbonyl group, a C 1-12 hydrocarbon gr…
- Who is the assignee on this patent?
- Adeka Corp
- What technology area does this patent fall under?
- Primary CPC classification C07C251/08. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jul 16 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).