Novel Imine
US-2024190813-A1 · Jun 13, 2024 · US
Metal alkoxide compound, thin-film-forming material, method for producing thin film, and alcohol compound
US9896468B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9896468-B2 |
| Application number | US-201314413102-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 21, 2013 |
| Priority date | Nov 13, 2012 |
| Publication date | Feb 20, 2018 |
| Grant date | Feb 20, 2018 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R 1 represents a methyl group or an ethyl group, R 2 represents a hydrogen atom or a methyl group, R 3 represents a C 1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.
First claim
Opening claim text (preview).
The invention claimed is: 1. A metal alkoxide compound represented by general formula (I): In the formula, R 1 represents a methyl group or an ethyl group, R 2 represents a hydrogen atom or a methyl group, R 3 represents a C 1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom. 2. The metal alkoxide compound according to claim 1 , wherein, in the general formula (I), M is copper, nickel, or cobalt. 3. The metal alkoxide compound according to claim 1 , wherein, in the general formula (I), M is copper, and R 2 is a hydrogen atom. 4. A thin-film-forming material including the metal alkoxide compound according to claim 1 . 5. A method for producing a thin film, the method comprising: introducing, into a deposition chamber in which a substrate is placed, a vapor that has been obtained by vaporizing the thin-film-forming material according to claim 4 and that includes said metal alkoxide compound; and forming a metal-containing thin film on a surface of the substrate by decomposing and/or chemically reacting said metal alkoxide compound. 6. A thin-film-forming material including the metal alkoxide compound according to claim 2 . 7. A thin-film-forming material including the metal alkoxide compound according to claim 3 .
Assignees
Inventors
Classifications
without a metal-carbon linkage · CPC title
- C07C251/08Primary
being acyclic · CPC title
of copper or solid solutions thereof · CPC title
from metallo-organic compounds · CPC title
Copper compounds · CPC title
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- What does patent US9896468B2 cover?
- Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is descri…
- Who is the assignee on this patent?
- Adeka Corp
- What technology area does this patent fall under?
- Primary CPC classification C07C251/08. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Feb 20 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).