Conductive structure and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10349511-B2
Application number	US-201615541983-A
Country	US
Kind code	B2
Filing date	Feb 11, 2016
Priority date	Feb 10, 2015
Publication date	Jul 9, 2019
Grant date	Jul 9, 2019

Abstract

The present application relates to a conductive structure body and a manufacturing method thereof. The method for manufacturing the conductive structure body according to an exemplary embodiment of the present application includes forming a metal layer on a substrate and forming a darkening layer on the metal layer, in which the forming of the darkening layer is performed by reactive sputtering using CO 2 .

First claim

The invention claimed is:

1. A method for manufacturing a conductive structure body, comprising:
forming a metal layer on a substrate, and forming a darkening layer on the metal layer; or forming a darkening layer on a substrate, and forming a metal layer on the darkening layer,
wherein the forming of the darkening layer is performed by reactive sputtering using CO 2 , and
wherein the darkening layer includes (CuO x ) a C b , and x is in a range of 0<x≤1, a+b=1, and b is in a range of 0<b≤0.1.

2. The method of claim 1 , wherein when the darkening layer is formed, the reactive sputtering is performed by injecting CO 2 and Ar at the same time.

3. The method of claim 2 , wherein a partial pressure of CO 2 is 66% or more.

4. The method of claim 1 , wherein the darkening layer includes at least one selected from a group consisting of metal oxide, metal nitride and metal oxynitride.

5. The method of claim 4 , wherein the metal oxide, the metal nitride or the metal oxynitride includes at least one metal selected from a group consisting of Fe, Co, Ti, V, Al, Au, Cu, Ag and alloys thereof.

6. The method of claim 4 , wherein the metal layer and the darkening layer include the same metal atom.

7. The method of claim 1 , further comprising:
patterning the metal layer and the darkening layer, respectively or simultaneously.

8. A conductive structure body manufactured by the method for manufacturing the conductive structure body of claim 1 .

9. A conductive structure body, comprising;
a substrate;
a metal layer provided on the substrate; and
a darkening layer provided on at least one surface of the metal layer,
wherein the darkening layer includes (CuO x ) a C b , and x is in a range of 0<x≤1, a+b=1, and b is in a range of 0<b≤0.1.

10. The conductive structure body of claim 9 , wherein a total reflection measured in an opposite direction to a surface of which the darkening layer contacts the metal layer is 20% or less.

11. The conductive structure body of claim 9 , wherein the darkening layer is provided between the metal layer and the substrate and a total reflection measured at the substrate side is 20% or less.

12. The conductive structure body of claim 9 , wherein a surface resistance of the conductive structure body is 1 Ω/square or more and 300 Ω/square or less.

13. The conductive structure body of claim 9 , wherein a mean extinction coefficient k in a visible light area of the conductive structure body is 0.4 to 1.0.

14. The conductive structure body of claim 9 , wherein a contrast value L* is 50 or less based on the CIE L*a*b* color coordinate.

15. An electronic device including the conductive structure body of claim 9 .

Assignees

• Lg Chemical Ltd

Inventors

• Lim Jin Hyong
• Min Jin Hyuk
• Kim Ki-Hwan
• Park Chan Hyoung
• Lee Ilha

Classifications

• G06F2203/04103

  Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices · CPC title

• C23C14/205

  by cathodic sputtering · CPC title

• C23C14/087

  of copper or solid solutions thereof · CPC title

• C23C14/0057 Primary

  using reactive gases other than O2, H2O, N2, NH3 or CH4 · CPC title

• G06F3/041 Primary

  Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means · CPC title