Photoresist polymers, photoresist compositions, methods of forming patterns and methods of manufacturing semiconductor devices

Patent metadata

Field	Value
Publication number	US-10345701-B2
Application number	US-201715808116-A
Country	US
Kind code	B2
Filing date	Nov 9, 2017
Priority date	Dec 12, 2014
Publication date	Jul 9, 2019
Grant date	Jul 9, 2019

Abstract

A photoresist polymer includes a first repeating unit and a second repeating unit. The first repeating unit includes a fluorine leaving group that is configured to be removed by a photo-chemical reaction. The second repeating unit includes a silicon-containing leaving group that is configured to be removed by the fluorine leaving group when the fluorine leaving group is removed from the first repeating unit.

First claim

What is claimed is:

1. A photoresist polymer, comprising:
a first repeating unit including a fluorine leaving group configured to be removed by a photo-chemical reaction; and
a second repeating unit including a silicon-containing leaving group configured to be removed by the fluorine leaving group when the fluorine leaving group is removed from the first repeating unit,
wherein the photoresist polymer is represented by Chemical Formula 2:

wherein, in Chemical Formula 2, R 1 and R 5 are each independently a divalent group selected from styrene, hydroxystyrene, acrylate, C 1 -C 6 alkylene, arylene, carbonyl, oxy, a C 2 -C 30 unsaturated aliphatic group, and a combination thereof,
R 2 , R 3 and R 4 are independently hydrogen, a C 1 -C 20 alkyl group, a C 3 -C 20 cycloalkyl group or a C 6 -C 30 aromatic group, and R 2 , R 3 and R 4 are the same as or different from each other,
R 6 is a C 1 -C 20 alkyl group, a C 1 -C 20 allyl group, a C 3 -C 20 cycloalkyl group, a C 6 -C 30 aromatic group, a hydroxyl group, a hydroxyalkyl group, or a C 1 -C 20 alkoxy group, and
each a and b represents a mole ratio ranging from about 0.4 to about 0.6, and a sum of a and b is 1,
wherein in Chemical Formula 2, fluorine (F) and hydrogen (H) are positioned in a staggered conformation or an anti-periplanar configuration.

2. The photoresist polymer of claim 1 , wherein the silicon-containing leaving group includes at least one selected from trimethylsilyl (TMS), tert-butyldimethylsilyl (TBDMS), triisopropylsilyl (TIPS) and tert-butyldiphenylsilyl (TBDPS).

3. A photoresist composition, comprising:
a photoresist polymer including a repeating unit combined with a silicon-containing leaving group;
a solvent; and
a fluorine-containing source configured to provide an active fluorine, wherein
the fluorine-containing source includes one of ammonium fluoride, an alkali metal fluoride, or tetrabutylammonium fluoride (TBAF).

4. The photoresist composition of claim 3 , wherein the repeating unit is represented by Chemical Formula 1:

wherein, in Chemical Formula 1, R 1 is a divalent group selected from styrene, hydroxystyrene, acrylate, C 1 -C 6 alkylene, arylene, carbonyl, oxy, a C 2 -C 30 unsaturated aliphatic group, and a combination thereof, and
R 2 , R 3 and R 4 are independently hydrogen, a C 1 -C 20 alkyl group, a C 3 -C 20 cycloalkyl group or a C 6 -C 30 aromatic group, and R 2 , R 3 and R 4 are the same as or different from each other.

5. The photoresist composition of claim 3 , wherein the fluorine-containing source includes ammonium fluoride.

6. A photoresist composition, comprising:
a photoresist polymer represented by Chemical Formula 2; and
a solvent,

wherein, in Chemical Formula 2, R 1 and R 5 are each independently a divalent group selected from styrene, hydroxystyrene, acrylate, C 1 -C 6 alkylene, arylene, carbonyl, oxy, a C 2 -C 30 unsaturated aliphatic group, and a combination thereof,
R 2 , R 3 and R 4 are independently hydrogen, a C 1 -C 20 alkyl group, a C 3 -C 20 cycloalkyl group or a C 6 -C 30 aromatic group, and R 2 , R 3 and R 4 are the same as or different from each other,
R 6 is a C 1 -C 20 alkyl group, a C 1 -C 20 allyl group, a C 3 -C 20 cycloalkyl group, a C 6 -C 30 aromatic group, a hydroxyl group, a hydroxyalkyl group, or a C 1 -C 20 alkoxy group, and
each a and b represents a mole ratio ranging from about 0.4 to about 0.6, and a sum of a and b is 1,
wherein in Chemical Formula 2, fluorine (F) and hydrogen (H) are positioned in a staggered conformation or an anti-periplanar configuration.

7. The photoresist composition of claim 3 , further comprising:
one of a photoacid generator, a sensitizer, or a combination thereof.

8. The photoresist composition of claim 7 , wherein the photoacid generator includes at least one selected from the group consisting of an onium salt, an aromatic diazonium salt, a sulfonium salt, a triarylsulfonium salt, a diarylsulfonium salt, a monoarylsulfonium salt, an iodonium salt, a diaryliodonium salt, nitrobenzyl ester, disulfone, diazo-disulfone, sulfonate, trichloromethyl triazine and N-hydroxysuccinimide triflate.

9. The photoresist composition of claim 7 , wherein the sensitizer includes at least one selected from the group consisting of benzophenone, benzoyl, thiophene, naphthalene, anthracene, phenanthrene, pyrene, coumarin, thioxantone, acetophenone, naphtoquinone and anthraquinone.

10. The photoresist composition of claim 3 , wherein the fluorine-containing source includes tetrabutylammonium fluoride (TBAF).

11. The photoresist composition of claim 3 , wherein the solvent includes at least one selected from the group consisting of cyclohexanone, cyclopentanone, tetrahydrofuran (THF), dimethylformamide, propylene glycol monomethyl ether acetate (PGMEA), ethyl lactate, methyl ethyl ketone, benzene and toluene.

12. The photoresist composition of claim 3 , further comprising a surfactant including at least one selected from the group consisting of a sorbitol-based agent and an alcohol.

13. The photoresist composition of claim 3 , wherein the fluorine-containing source is configured to provide the active fluorine in response to an extreme ultraviolet (EUV) light.

14. The photoresist composition of claim 3 , wherein
the fluorine-containing source includes the alkali metal fluoride.

15. The photoresist composition of claim 14 , wherein the alkali metal fluoride includes at least one selected from the group consisting of KF, NaF and CsF.

Assignees

• Park Jin
• Kim Hyun Woo
• Han Jin Kyu
• Koh Cha Won
• Samsung Electronics Co Ltd

Inventors

• Park Jin
• Kim Hyun-Woo
• Han Jin-Kyu
• Koh Cha-Won

Classifications

• H10P50/73 Primary

  using masks for insulating materials · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• G03F7/0757

  Macromolecular compounds containing Si-O, Si-C or Si-N bonds (G03F7/0752 takes precedence) · CPC title

• G03F7/0046

  with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title