Underlayer composition and method of manufacturing a semiconductor device
US-2024369932-A1 · Nov 7, 2024 · US
US10113022B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10113022-B2 |
| Application number | US-201514804775-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 21, 2015 |
| Priority date | Dec 5, 2014 |
| Publication date | Oct 30, 2018 |
| Grant date | Oct 30, 2018 |
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A photoresist polymer is synthesized from a repeating unit that comprises a first leaving group including an ester group, and a second leaving group capable of being removed together with the first leaving group.
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What is claimed is: 1. A photoresist polymer synthesized from a repeating unit, the repeating unit comprising: a first leaving group including an ester group; and a second leaving group capable of being removed with the first leaving group, wherein the first leaving group and the second leaving group are positioned in one of a staggered conformation and an anti-periplanar configuration, wherein the repeating unit is represented by one of Chemical Formula 3 and Chemical Formula 4: wherein, in Chemical Formulae 3 and 4, R 1 and R 3 are independently one of hydrogen, a C 1 -C 20 alkyl group, a C 3 -C 10 cycloalkyl group, a C 6 -C 30 aromatic group and a combination thereof, R 2 is a divalent group selected from one of styrene, hydroxystyrene, acrylate, C 1 -C 6 alkylene, arylene, carbonyl, oxy, a C 2 -C 30 unsaturated aliphatic group and a combination thereof, and X is one of fluorine (F), chlorine (Cl), bromine (Br) and iodine (I). 2. The photoresist polymer of claim 1 , wherein R 2 and R 3 are fused to form a ring structure. 3. A photoresist polymer synthesized from a repeating unit, the repeating unit comprising: a first leaving group including an ester group: and a second leaving group capable of being removed with the first leaving group, wherein the first leaving group and the second leaving group are positioned in one of a staggered conformation and an anti-periplanar configuration, wherein the repeating unit is represented by Chemical Formula 5: wherein, in Chemical Formula 5, each of R 1 , R 2 and R 5 are independently one of hydrogen, a C 1 -C 20 alkyl group, a C 3 -C 10 cycloalkyl group, a C 6 -C 30 aromatic group and a combination thereof, and R 1 , R 2 and R 5 are the same as or different from each other, each of X 1 and X 2 are independently one of F, Cl, Br and I, and X 1 and X 2 are the same as or different from each other, and n is an integer greater than 1. 4. The photoresist polymer of claim 3 , wherein at least one of R 1 and R 2 is connected to another repeating unit adjacent to the repeating unit. 5. The photoresist polymer of claim 3 , wherein the repeating unit is represented by Chemical Formula 6: wherein, in Chemical Formula 6, each of R 1 , R 2 , R 3 , R 4 and R 5 are independently one of hydrogen, a C 1 -C 20 alkyl group, a C 3 -C 10 cycloalkyl group, a C 6 -C 30 aromatic group and a combination thereof, and R 1 , R 2 , R 3 , R 4 and R 5 are the same as or different from each other, and X 1 , X 2 , X 3 , and X 4 are independently one of F, Cl, Br and I, and X 1 , X 2 , X 3 , and X 4 are the same as or different from each other. 6. A photoresist polymer synthesized from a repeating unit, the repeating unit comprising: a first leaving group including an ester group; and a second leaving group capable of being removed with the first leaving group, wherein the first leaving group and the second leaving group are positioned in one of a staggered conformation and an anti-periplanar configuration, wherein the second leaving group includes a tosylate group.
Monomers containing bromine or iodine · CPC title
Imagewise removal by selective transfer, e.g. peeling away · CPC title
Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title
Monomers containing fluorine · CPC title
Polythioesters · CPC title
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