Polishing composition and polishing method using the same

Patent metadata

Field	Value
Publication number	US-10344187-B2
Application number	US-201414561188-A
Country	US
Kind code	B2
Filing date	Dec 4, 2014
Priority date	Feb 3, 2011
Publication date	Jul 9, 2019
Grant date	Jul 9, 2019

Abstract

Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 μm/min can be achieved.

First claim

The invention claimed is:

1. A polishing method of polishing a silicon wafer, the method comprising:
using a polishing composition to polish the silicon wafer at a polishing rate greater than 0.1 μm/min, wherein the polishing composition does not contain abrasives and comprises:
a polishing accelerator including an amine compound having 1 to 6 carbon atoms;
a water-soluble polymer; and
a compound that includes an alkyl amine structure and at least one block polyether, wherein an oxyethylene group and an oxypropylene group are included in the block polyether,
wherein the compound has a hydrophilic group and a hydrophobic group in one polymer chain, and has a smaller molecular weight as compared with coexistent water-soluble polymers, and
a concentration of the compound is 0.1 to 10 ppm.

2. The polishing method according to claim 1 , wherein the polishing composition further comprises:
a pH buffer including a carbonate and a hydrogencarbonate.

3. The polishing method according to claim 1 , wherein the alkyl amine structure having two nitrogen atoms.

4. The polishing method according to claim 1 , wherein a weight average molecular weight of the water-soluble polymer is between 500,000 and 1,300,000.

5. The polishing method according to claim 1 , wherein the polishing accelerator is 2-(2-aminoethylamino) ethanol.

6. The polishing method according to claim 1 , wherein the polishing is a primary polishing of a silicon wafer.

Assignees

• Nitta Haas Inc
• Sumco Corp

Inventors

• Teramoto Masashi
• Ogata Shinichi
• Tanimoto Ryuichi

Classifications

• H10P90/129

  by polishing · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P52/00 Primary

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• H01L21/02024

  Electricity · mapped topic