Electro-optical device with lateral current injection regions

Patent metadata

Field	Value
Publication number	US-10340661-B2
Application number	US-201715800339-A
Country	US
Kind code	B2
Filing date	Nov 1, 2017
Priority date	Nov 1, 2017
Publication date	Jul 2, 2019
Grant date	Jul 2, 2019

Abstract

Embodiments of the disclosure are directed to a lateral current injection electro-optical device. The device comprises an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices and fabrication methods.

First claim

What is claimed is:

1. A lateral current injection electro-optical device comprising:
an active region comprising a stack of III-V semiconductor gain materials stacked along a stacking direction z, the active region formed as a slab having two pairs of opposite, lateral surface portions, each extending parallel to said stacking direction z,
wherein the slab is a form factor, whereby a length of the slab is larger than a width thereof,
wherein said width, said length, and said stacking direction z are perpendicular; and

two paired elements, including:
a pair of doped layers of III-V semiconductor materials, including an n-doped layer and a p-doped layer,
wherein the p-doped layer and the n-doped layer are arranged on respective sides of the slab, contiguously with the opposite, lateral surface portions of one of said two pairs of lateral surface portions,
wherein a maximum length of each of the p-doped layer and the n-doped layer is less than a length of said opposite, lateral surface portions of said one of said two pairs, and
wherein each of the p-doped layer and the n-doped layer comprises, on a top surface portion thereof, a recess extending laterally along the slab and parallel to its length, so as for the active region and the contiguous pair of doped layers to have a rib waveguide configuration; and
a pair of lateral waveguide cores,
wherein the lateral waveguide cores are laterally butt-jointed to the opposite, lateral surface portions of the other one of said two pairs of surface portions, and
wherein the two paired elements are laterally arranged on opposite sides of the slab, the elements distinctly adjoining respective elements of the lateral surface portions of the slab such that the elements are separated from each other by the slab.

2. The lateral current injection electro-optical device according to claim 1 , further comprising:
a metal contact patterned on a top surface portion of each of the p-doped layer and the n-doped layer, along the recess.

3. The lateral current injection electro-optical device according to claim 1 , wherein:
the electro-optical device further comprises structured silicon waveguide cores having portions extending underneath said lateral waveguide cores; and
the electro-optical device is configured as a hybrid lateral current injection device, whereby optical radiation out-coupled from the active region via the lateral waveguide cores couples into the structured silicon waveguide cores, in operation.

4. The lateral current injection electro-optical device according to claim 3 , wherein:
the lateral waveguide cores are tapered, so as to thin down outwardly, and said portions of the structured silicon waveguide cores are reversely tapered.

5. The lateral current injection electro-optical device according to claim 4 , wherein:
the lateral waveguide cores exhibit, each, a three-stage taper.

6. The lateral current injection electro-optical device according to claim 1 , wherein:
each of the p-doped layer and the n-doped layer are tapered, so as to laterally flare towards the slab, at a level of contact therewith.

7. The lateral current injection electro-optical device according to claim 1 , wherein:
the electro-optical device is a lateral current injection laser device.

8. The lateral current injection electro-optical device according to claim 7 , wherein:
the laser device is a single mode laser device.

9. The lateral current injection electro-optical device according to claim 7 , wherein:
the silicon waveguides comprise Bragg mirrors configured so as to provide a radiation feedback for the laser.

10. The lateral current injection electro-optical device according to claim 1 , wherein:
said stack of III-V semiconductor gain materials comprise one of: In 1-x-y Al x Ga y As; In 1-x Ga x As y P 1-y ; and In 1-x Ga x As y N 1-y , with 0≤x≤1 and 0≤y≤1−x; and
each of the p-doped layer and the n-doped layer comprises one of InP, InAs or GaAs.

11. The lateral current injection electro-optical device according to claim 1 , wherein:
each of the lateral waveguide cores, the p-doped layer, and the n-doped layer are a selectively regrown layer.

12. A silicon photonic chip, wherein the silicon photonic chip is a CMOS-fabricated device, comprising:
a lateral current injection, electro-optical device comprising an active region that is comprised of a stack of III-V semiconductor gain materials stacked along a stacking direction z and two paired elements, wherein the active region is formed as a slab having several lateral surface portions, each extending parallel to said stacking direction z, and the two paired elements include:
a pair of doped layers of III-V semiconductor materials that include an n-doped layer and a p-doped layer, wherein each of the p-doped layer and the n-doped layer comprises a recess extending laterally along the slab and parallel to its length, so as for the active region and the contiguous pair of doped layers to have a rib waveguide configuration, and
a pair of lateral waveguide cores,
wherein the two paired elements are laterally arranged on opposite sides of the slab, the elements distinctly adjoining respective elements of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab;

structured silicon waveguide cores having portions extending underneath the pair of lateral waveguide cores of the electro-optical device, wherein the electro-optical device is configured as a hybrid lateral current injection device, whereby optical radiation out-coupled from the active region via the lateral waveguide cores couples into the structured silicon waveguide cores, in operation; and
a silicon on insulator wafer, whose top silicon layer is structured so as to form said structured silicon waveguide cores.

13. The silicon photonic chip according to claim 12 , further comprising:
a CMOS-compatible metal contact patterned on a top surface portion of each of the p-doped layer and the n-doped layer, the top surface portion being on a same side as and along the recess extending on said each of the doped layer.

Assignees

• IBM

Inventors

• Caër Charles
• Czornomaz Lukas
• Abel Stefan
• Offrein Bert Jan

Classifications

• H01S5/04257

  having positive and negative electrodes on the same side of the substrate · CPC title

• H01S5/1032

  Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region · CPC title

• G02B6/12

  of the integrated circuit kind (electric integrated circuits H10B, H10D84/00 - H10D89/00, H10F19/00, H10F39/00, H10H29/00, H10K19/00, H10K39/00, H10K59/00, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00, H10N89/00) · CPC title

• H01S5/141

  using a wavelength selective device, e.g. a grating or etalon (H01S5/146 takes precedence) · CPC title

• H01S5/021

  Silicon based substrates · CPC title