Terahertz detection and spectroscopy with films of homogeneous carbon nanotubes

Patent metadata

Field	Value
Publication number	US-10340459-B2
Application number	US-201615077025-A
Country	US
Kind code	B2
Filing date	Mar 22, 2016
Priority date	Mar 22, 2016
Publication date	Jul 2, 2019
Grant date	Jul 2, 2019

Abstract

Detectors and methods of forming the same include aligning a semiconducting carbon nanotubes on a substrate in parallel to form a nanotube layer. The aligned semiconducting carbon nanotubes in the nanotube layer are cut to a uniform length corresponding to a detection frequency. Metal contacts are formed at opposite ends of the nanotube layer.

First claim

The invention claimed is:

1. A method for forming a detector, comprising:
aligning a plurality of purified semiconducting carbon nanotubes on a substrate, in parallel, to form a stack of nanotube monolayers;
cutting the aligned plurality of semiconducting carbon nanotubes in the stack of nanotube monolayers to a uniform length corresponding to a detection frequency; and
forming metal contacts at opposite ends of the stack of nanotube monolayers.

2. The method of claim 1 , further comprising:
growing a plurality of carbon nanotubes; and
purifying the plurality of carbon nanotubes so that only semiconducting nanotubes remain.

3. The method of claim 2 , wherein purifying the carbon nanotubes comprises:
dissolving the carbon nanotubes in a solution with a selecting agent and heating the solution to bind the selecting agent only to semiconducting carbon nanotubes; and
separating the semiconducting carbon nanotubes from non-semiconducting carbon nanotubes in a centrifuge.

4. The method of claim 3 , wherein the solution is toluene and the selecting agent is poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-co-(6,6′-{2,2′-bipyridine})].

5. The method of claim 1 , wherein aligning the plurality of semiconducting carbon nanotubes comprises:
placing the substrate in a container holding a dispersion that includes the plurality of carbon nanotubes;
contracting walls of the container to align the plurality of carbon nanotubes in parallel; and
removing the substrate from the container to deposit a layer of parallel carbon nanotubes onto a surface of the substrate.

6. The method of claim 5 , further comprising repeating said alignment to form a thicker stack of nanotube monolayers.

7. The method of claim 1 , further comprising a dielectric layer over the metal contacts.

8. The method of claim 1 , wherein aligning the plurality of semiconducting carbon nanotubes comprises arranging the plurality of semiconducting carbon nanotubes side-by side with an axial direction that is perpendicular to a shared axis of the first and second metal contacts.

9. A detector, comprising:
a stack of monolayers of purified semiconducting carbon nanotubes that are aligned in parallel and that have a uniform length;
a first metal contact in contact with a first side of the stack of monolayers of carbon nanotubes; and
a second metal contact in contact with a second side of the stack of monolayers of carbon nanotubes, opposite to the first side.

10. The detector of claim 9 , wherein the carbon nanotubes are all semiconducting carbon nanotubes.

11. The detector of claim 9 , wherein the first metal contact is formed from a metal that is different from a metal forming the second metal contact.

12. The detector of claim 11 , wherein the first metal contact is formed from palladium and the second metal contact is formed from scandium.

13. The detector of claim 9 , wherein the carbon nanotubes are arranged side-by-side with an axial direction that is perpendicular to a shared axis of the first and second metal contacts.

14. A spectral detector, comprising:
a detector array comprising a plurality of individual detectors, each detector being tuned to a different respective frequency, and each detector comprising:
a stack of monolayers of purified semiconducting carbon nanotubes that are aligned in parallel and that have a uniform length corresponding to the respective frequency of the detector;
a first metal contact in contact with a first side of each respective stack of monolayers of carbon nanotubes; and
a second metal contact in contact with a second side of each respective stack of monolayers of carbon nanotubes, opposite to the first side.

15. The spectral detector of claim 14 , further comprising a sensor control module configured to read voltages from each of the individual detectors and to determine a spectral response across a range of frequencies.

16. The spectral detector of claim 15 , wherein the sensor control module is further configured to read voltages from each of the individual detectors under radiation of known intensity to determine calibration for the detector array.

17. The spectral detector of claim 14 , wherein the carbon nanotubes are all semiconducting carbon nanotubes.

18. The spectral detector of claim 14 , wherein each first metal contact is formed from a metal that is different from a metal forming each second metal contact.

19. The spectral detector of claim 18 , wherein each first metal contact is formed from palladium and each second metal contact is formed from scandium.

20. The spectral detector of claim 14 , wherein the carbon nanotubes in each detector are arranged side-by-side with an axial direction that is perpendicular to a shared axis of the respective first and second metal contacts.

Assignees

• IBM

Inventors

• Falk Abram L
• Farmer Damon B
• Han Shu-Jen

Classifications

• H01L51/0048 Primary

  Electricity · mapped topic

• H01L51/0003

  Electricity · mapped topic

• H01L51/0025

  Electricity · mapped topic

• H01L27/305

  Electricity · mapped topic

• C01B2202/22

  Electronic properties · CPC title