Resistive memory device containing carbon barrier and method of making thereof

Patent metadata

Field	Value
Publication number	US-10340449-B2
Application number	US-201715611029-A
Country	US
Kind code	B2
Filing date	Jun 1, 2017
Priority date	Jun 1, 2017
Publication date	Jul 2, 2019
Grant date	Jul 2, 2019

Abstract

A resistive memory device, such as a BMC ReRAM device, includes at least one resistive memory element which contains a carbon barrier material portion and a resistive memory material portion that is disposed between a first electrode and a second electrode.

First claim

What is claimed is:

1. A resistive memory device comprising at least one resistive memory element, wherein the at least one resistive memory element comprises;
a carbon barrier material portion; and
a layer stack that is disposed between a first electrode and a second electrode, wherein the layer stack comprises:
a first interfacial metal oxide layer;
a resistive memory material portion in direct contact with a surface of the first interfacial metal oxide layer; and
a second interfacial metal oxide layer in direct contact with a surface of the resistive memory material portion,
wherein the carbon barrier material portion directly contacts the first interfacial metal oxide layer,
wherein the carbon barrier material portion directly contacts the first electrode, and
wherein:
the first electrode comprises a pillar shaped conductive material portion that contacts a first electrically conductive line that extends along a first direction;
the second electrode comprises a portion of a second electrically conductive line that extends along a second direction that is different from the first direction; and
the carbon barrier material portion and the resistive memory material portion are located at a region in which the pillar shaped conductive material portion and the second electrically conductive line have a minimum spacing therebetween.

2. The resistive memory device of claim 1 , wherein:
the at least one resistive memory element comprises a barrier modulated cell of a resistive random access memory (ReRAM) device; and
the resistive memory material portion comprises a metal oxide material having at least two states having different resistivity, which are switched by at least one of oxygen ion and oxygen vacancy diffusion in response to an application of an electric field to the metal oxide material.

3. The resistive memory device of claim 2 , wherein the metal oxide material comprises sub-stoichiometric titanium oxide.

4. The resistive memory device of claim 1 , wherein:
the first interfacial metal oxide layer comprises a first aluminum oxide layer having a thickness in a range from 0.3 nm to 1.0 nm; and
the second interfacial metal oxide layer comprises a second aluminum oxide layer having a thickness in a range from 0.3 nm to 1.0 nm.

5. The resistive memory device of claim 1 , further comprising an amorphous silicon material portion disposed between the first electrode and the carbon barrier material portion.

6. The resistive memory device of claim 1 , wherein:
the carbon barrier material portion has a thickness in a range from 2 nm to 10 nm;
the carbon barrier material portion contains less than 5 volume percent crystalline phase; and
the carbon barrier material portion comprises carbon and 14 to 60 atomic percent hydrogen.

7. The resistive memory device of claim 1 , wherein:
the first electrode is located between insulating material portions of at least one insulating layer; and
the carbon barrier material portion directly contacts the at least one insulating layer.

8. The resistive memory device of claim 1 , wherein the first electrode and the second electrode extend along two directions that are perpendicular to each other.

9. The resistive memory device of claim 8 , wherein the at least one resistive memory element comprises a two-dimensional array of resistive memory elements located over a substrate.

10. The resistive memory device of claim 8 , wherein the at least one resistive memory element comprises a three-dimensional array of resistive memory elements located over a substrate.

Assignees

• Sandisk Technologies Llc

Inventors

• Wu Ming-Che
• Padilla Alvaro
• Kumar Tanmay

Classifications

• G11C2013/0045

  Read using current through the cell · CPC title

• H01L45/085

  Electricity · mapped topic

• H01L45/146

  Electricity · mapped topic

• H01L27/2463

  Electricity · mapped topic

• H01L45/1616

  Electricity · mapped topic