RF circuit with switch transistor with body connection

Patent metadata

Field	Value
Publication number	US-10326439-B2
Application number	US-201715845549-A
Country	US
Kind code	B2
Filing date	Dec 18, 2017
Priority date	Mar 6, 2015
Publication date	Jun 18, 2019
Grant date	Jun 18, 2019

Abstract

In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

First claim

What is claimed is:

1. A Radio Frequency (RF) switch core comprising:
a first RF switch coupled in series between an upstream RF node and a downstream RF node, wherein the first RF switch comprises a first series connected plurality of transistors, further wherein each of the transistors of the first series connected plurality of transistors includes a first gate control voltage and a first body control voltage, further wherein the first body control voltage is positively biased higher than the first gate control voltage during an ON state of the first RF switch; and
a second RF switch coupling the downstream RF node to ground, wherein the second RF switch comprises a second series connected plurality of transistors, further wherein each of the transistors of the second series connected plurality of transistors includes a second gate control voltage and a second body control voltage, further wherein the second body control voltage is positively biased during an ON state of the second RF switch.

2. The RF switch core of claim 1 , wherein the first RF switch comprises:
a first N-channel transistor having a source coupled to a drain of a second N-channel transistor.

3. The RF switch core of claim 2 , further wherein the first body control voltage is greater than a built-in p-n junction diode of each of the first N-channel transistor and the second N-channel transistor.

4. The RF switch core of claim 1 , wherein the second RF switch comprises:
a third N-channel transistor having a drain coupled to the downstream RF node and a source coupled to a drain of a fourth N-channel transistor.

5. The RF switch core of claim 4 , further wherein the second body control voltage is greater than 0.7V.

6. The RF switch core of claim 1 , further comprising:
a voltage control source configured to produce the first gate control voltage and the first body control voltage as a single control voltage that is applied through a first resistance to gate terminals of the first series connected plurality of transistors and through a second resistance to body terminals of the first series connected plurality of transistors;
wherein the first resistance is different from the second resistance; and
wherein the first resistance and the second resistance share a common circuit node.

7. The RF switch core of claim 6 , wherein the voltage control source comprises:
a positive voltage generator;
a negative voltage generator; and
a voltage level shifter configured to operate under control of the positive voltage generator and the negative voltage generator.

8. The RF switch core of claim 1 , further comprising:
a first voltage control source configured to produce the first gate control voltage and the second gate control voltage; and
a second voltage control source configured to produce the first body control voltage and the second body control voltage, wherein the second voltage control source is different from the first voltage control source.

9. The RF switch core of claim 8 , wherein:
the first voltage control source comprises a first level shifter; and
the second voltage control source comprises a second level shifter.

10. A Radio Frequency (RF) circuit comprising:
a first RF switch coupled in series between an RF antenna side node and an RF downstream node, wherein the first RF switch comprises a first series connected plurality of transistors, further wherein each transistor of the first series connected plurality of transistors includes a first gate control voltage and a first body control voltage, further wherein the first body control voltage is positively biased higher than the first gate control voltage during an ON state of the first RF switch;
a second RF switch coupling the RF downstream node to ground, wherein the second RF switch comprises a second series connected plurality of transistors, further wherein each transistor of the second series connected plurality of transistors includes a second gate control voltage and a second body control voltage, further wherein the second body control voltage is positively biased during an ON state of the second RF switch; and
means for producing the first gate control voltage, the second gate control voltage, the first body control voltage, and the second body control voltage.

11. The RF circuit of claim 10 , wherein the first RF switch comprises:
a first N-channel transistor having a source coupled to a drain of a second N-channel transistor.

12. The RF circuit of claim 10 , wherein the second RF switch comprises:
a third N-channel transistor having a drain coupled to the RF downstream node and a source coupled to a drain of a fourth N-channel transistor.

13. The RF circuit of claim 10 , wherein the means for producing the first gate control voltage, the second gate control voltage, the first body control voltage, and the second body control voltage comprises:
a voltage control source configured to produce the first gate control voltage and the first body control voltage as a single control voltage that is applied through a first resistance to gate terminals of the first series connected plurality of transistors and through a second resistance to body terminals of the first series connected plurality of transistors;
wherein the first resistance is different from the second resistance; and
wherein the first resistance and the second resistance share a common circuit node.

14. The RF circuit of claim 10 , wherein the means for producing the first gate control voltage, the second gate control voltage, the first body control voltage, and the second body control voltage comprises:
a first voltage control source configured to produce the first gate control voltage and the second gate control voltage; and
a second voltage control source configured to produce the first body control voltage and the second body control voltage, wherein the second voltage control source is different from the first voltage control source.

15. A Radio Frequency (RF) circuit for routing an RF carrier signal between an antenna and downstream components of an RF device, the RF circuit comprising:
a first RF switch coupled between the antenna and a downstream node, wherein the first RF switch comprises a first plurality of N-channel transistors connected in series, further wherein each N-channel transistor of the first plurality of N-channel transistors includes a first gate control voltage and a first body control voltage, further wherein the first body control voltage is positively biased higher than the first gate control voltage during an ON state of the first RF switch; and
a second RF switch coupled between the downstream node and ground, wherein the second RF switch comprises a second plurality of N-channel transistors connected in series, further wherein each N-channel transistor of the second plurality of N-channel transistors includes a second gate control voltage and a second body control voltage, further wherein the second body control voltage is positively biased during an ON state of the second RF switch.

16. The RF circuit of claim 15 , further wherein the first body control voltage is greater than a built-in p-n junction diode of each of the N-channel transistors of the first plurality of N-channel transistors.

17. The RF circuit of claim 15 , wherein the second plurality of N-channel transistors comprises a first N-channel transistor having a drain coupled to the downstream node and a source coupled to a drain of a second N-channel transistor.

18. The RF circuit of claim 15 , further comprising:
a voltage control source c

Assignees

• Qualcomm Inc

Inventors

• Aubain Max
• Kemerling Clint

Classifications

• H03K17/102 Primary

  in field-effect transistor switches · CPC title

• H03K17/693

  Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors (logic circuits H03K19/00; code converters H03M5/00, H03M7/00) · CPC title

• H03K2217/0018

  Special modifications or use of the back gate voltage of a FET · CPC title

• H03K17/6871

  the output circuit comprising more than one controlled field-effect transistor · CPC title

• H03K17/687

  the devices being field-effect transistors · CPC title