Resistors with controlled resistivity

Patent metadata

Field	Value
Publication number	US-10325978-B2
Application number	US-201715814057-A
Country	US
Kind code	B2
Filing date	Nov 15, 2017
Priority date	Jan 11, 2017
Publication date	Jun 18, 2019
Grant date	Jun 18, 2019

Abstract

The present application provides planar and stacked resistor structures that are embedded within an interconnect dielectric material in which the resistivity of an electrical conducting resistive material or electrical conducting resistive materials of the resistor structure can be tuned to a desired resistivity during the manufacturing of the resistor structure. Notably, a doped metallic insulator layer is formed atop a substrate. A controlled surface treatment process is then performed to an upper portion of the doped metallic insulator layer to convert the upper portion of the doped metallic insulator layer into an electrical conducting resistive material layer. The remaining doped metallic insulator layer and the electrical conducting resistive material layer are then patterned to provide the resistor structure.

First claim

What is claimed is:

1. A semiconductor structure comprising:
a resistor structure located on a surface of a substrate, the resistor structure comprising an electrical conducting resistive material located on a doped metallic insulator having a crystal structure that has an insulating phase, the electrical conducting resistive material is selected from the group consisting of a metallic nitride, a metallic oxide, and a metallic nitride-oxide, wherein the base electrical conducting resistive material comprises a transition metal that is the same as a transition metal present in the doped metallic insulator layer; and
an interconnect dielectric material entirely embedding the resistor structure.

2. The semiconductor structure of claim 1 , wherein outermost sidewalls of the doped metallic insulator and the electrical conducting resistive material are vertically aligned with each other.

3. The semiconductor structure of claim 1 , wherein the resistor structure is a planar resistor consisting of the doped metallic insulator and the electrical conducting resistive material.

4. The semiconductor structure of claim 3 , further comprising a first contact structure and a second contact structure located in the interconnect dielectric material and contacting different portions of a topmost surface of the electrical conducting resistive material.

5. The semiconductor structure of claim 1 , wherein the doped metallic insulator is a nitrogen doped transition metal, an oxygen doped transition metal or a nitrogen and oxygen doped transition metal.

6. The semiconductor structure of claim 5 , wherein the transition metal is titanium (Ti), ruthenium (Ru), tungsten (W), platinum (Pt), cobalt (Co), rhodium (Rh) or manganese (Mn).

7. The semiconductor structure of claim 5 , wherein the transition metal is tantalum (Ta).

8. The semiconductor structure of claim 7 , wherein the electrical conducting resistive material is composed of tantalum nitride (TaN) and the doped metallic insulator is composed of Ta 3 N 5 .

9. The semiconductor structure of claim 1 , wherein the resistor structure is a stacked resistor further comprising a base electrical conducting resistive material located directly beneath the doped metallic insulator.

10. The semiconductor structure of claim 9 , wherein the substrate is a dielectric substrate that contains at least one interconnect structure embedded therein.

11. The semiconductor structure of claim 9 , wherein the base electrical conducting resistive material is selected from the group consisting of a metallic nitride, a metallic oxide, and a metallic nitride-oxide.

12. The semiconductor structure of claim 11 , wherein the metallic nitride, the metallic oxide, or metallic nitride-oxide that provides the base electrical conducting resistive material comprises a transition metal that is the same as the transition metal present in the doped metallic insulator layer.

13. The semiconductor structure of claim 12 , wherein the transition metal is titanium (Ti), ruthenium (Ru), tungsten (W), platinum (Pt), cobalt (Co), rhodium (Rh) or manganese (Mn).

14. The semiconductor structure of claim 12 , wherein the transition metal is tantalum (Ta).

15. The semiconductor structure of claim 14 , wherein the electrical conducting resistive material and the base electrical conducting resistive material are both composed of tantalum nitride (TaN) and the doped metallic insulator is composed of Ta 3 N 5 .

16. A semiconductor structure comprising:
a resistor structure located on a surface of a substrate, the resistor structure comprising an electrical conducting resistive material located on a doped metallic insulator layer having a crystal structure that has an insulating phase and composed of an oxygen-doped transition metal, and wherein the electrical conducting resistive material is composed of a metallic oxide, and wherein the base electrical conducting resistive material comprises a transition metal that is the same as a transition metal present in the doped metallic insulator layer; and
an interconnect dielectric material entirely embedding the resistor structure.

17. A semiconductor structure comprising:
a resistor structure located on a surface of a substrate, the resistor structure comprising an electrical conducting resistive material located on a doped metallic insulator layer having a crystal structure that has an insulating phase and composed of a nitrogen and oxygen-doped transition metal, and wherein the electrical conducting resistive material is composed of a metallic nitride-oxide, and wherein the base electrical conducting resistive material comprises a transition metal that is the same as a transition metal present in the doped metallic insulator layer; and
an interconnect dielectric material entirely embedding the resistor structure.

Assignees

• IBM

Inventors

• Edelstein Daniel C
• Yang Chih-Chao

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P14/69393

  the material containing tantalum, e.g. Ta2O5 · CPC title

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10W20/498

  Resistive arrangements or effects of, or between, wiring layers · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title