Light-emitting device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10319877-B2
Application number	US-201815944459-A
Country	US
Kind code	B2
Filing date	Apr 3, 2018
Priority date	Jun 26, 2013
Publication date	Jun 11, 2019
Grant date	Jun 11, 2019

Abstract

The present disclosure provides a light-emitting device including a substrate, a first block of semiconductor stack on the substrate, a second block of semiconductor stack on the substrate and a third block of semiconductor stack on the substrate. The first block of semiconductor stack includes a first emitting wavelength and a first surface away from the substrate. The second block of semiconductor stack on the substrate includes a second emitting wavelength and a second surface away from the substrate. The third block of semiconductor stack includes s a third emitting wavelength and a third surface away from the substrate. The second surface and the first surface are non-coplanar and the third surface and the first surface are coplanar. The first emitting wavelength, the second emitting wavelength and the third emitting wavelength are different.

First claim

What is claimed is:

1. A light-emitting device, comprising:
a substrate;
a first block of semiconductor stack on the substrate and comprises a first emitting wavelength and a first surface away from the substrate;
a second block of semiconductor stack on the substrate and comprises a second emitting wavelength and a second surface away from the substrate, the second surface and the first surface being non-coplanar; and
a third block of semiconductor stack on the substrate and comprises a third emitting wavelength and a third surface away from the substrate, the third surface and the first surface being coplanar;
wherein the first emitting wavelength, the second emitting wavelength and the third emitting wavelength are different.

2. The light-emitting device of claim 1 , wherein the first block of semiconductor stack, the second block of semiconductor stack and the third block of semiconductor stack emit lights of red color, green color, blue color or orange color.

3. The light-emitting device of claim 1 , wherein the first emitting wavelength, the second emitting wavelength and the third emitting wavelength are 440 nm to 460 nm, 510 nm to 530 nm, 620 nm to 645 nm or 595 nm to 620 nm.

4. The light-emitting device of claim 1 , further comprising a dielectric layer formed on the first block of semiconductor stack, the second block of semiconductor stack and the third block of semiconductor stack.

5. The light-emitting device of claim 1 , wherein the first block of semiconductor stack, the second block of semiconductor stack and the third block of semiconductor stack are electrically connected with one another.

6. The light-emitting device of claim 1 , wherein the first block of semiconductor stack, the second block of semiconductor stack and the third block of semiconductor stack are electrically connected in parallel with one another.

7. The light-emitting device of claim 1 , wherein the second surface is lower than the first surface and the third surface.

8. The light-emitting device of claim 1 , wherein the second block of semiconductor stack locates between the first block of semiconductor stack and the third block of semiconductor stack.

9. The light-emitting device of claim 1 , further comprising a first bonding layer between the substrate and the first block of semiconductor stack.

10. The light-emitting device of claim 1 , wherein the first surface comprises a first area and the second surface comprises a second area different from the first area.

11. The light-emitting device of claim 9 , further comprising a second bonding layer between the substrate and the second block of semiconductor stack.

12. The light-emitting device of claim 11 , wherein the first bonding layer has a thickness different the second bonding layer.

13. The light-emitting device of claim 11 , wherein the first bonding layer has a thickness same as the second bonding layer.

Assignees

• Epistar Corp

Inventors

• Huang Chien-Fu
• Lu Chih-Chiang
• Lin Chun-Yu
• Chiu Hsin-Chih

Classifications

• H10P74/207

  Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title

• H01L22/12

  Electricity · mapped topic