Microelectronic substrate electro processing system
US-9399827-B2 · Jul 26, 2016 · US
US10316426B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10316426-B2 |
| Application number | US-201615248248-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 26, 2016 |
| Priority date | Aug 28, 2015 |
| Publication date | Jun 11, 2019 |
| Grant date | Jun 11, 2019 |
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In-plane uniformity of a film that is plated on a polygonal substrate is enhanced. An anode holder configured to hold an anode, a substrate holder configured to hold a polygonal substrate, a plating bath for accommodating the anode holder and the substrate holder, and dipping the anode and the substrate in a plating solution, and a control device for controlling a current that flows between the anode and the substrate are included. The substrate holder has a plurality of power feeding members that are disposed along respective sides of the polygonal substrate. The control device is configured to be able to control the current so that currents of at least two different values are simultaneously supplied to the plurality of power feeding members.
Opening claim text (preview).
What is claimed is: 1. A plating apparatus, comprising: an anode holder configured to hold an anode; a substrate holder configured to hold a polygonal substrate; a plating bath for accommodating the anode holder and the substrate holder, and dipping the anode and the substrate in a plating solution; and a control device for controlling a current that flows between the anode and the substrate, wherein the substrate holder has a plurality of power feeding members that are disposed along respective sides of the polygonal substrate, and the control device is configured to be able to control the current so that currents of at least two different values are simultaneously supplied to the plurality of power feeding members on at least one respective side of the polygonal substrate. 2. The plating apparatus according to claim 1 , wherein the power feeding members include first power feeding members capable of contacting side central regions including central portions of the sides of the polygonal substrate, and second power feeding members capable of contacting intermediate regions adjacent to the side central regions and/or third power feeding members capable of contacting regions that are closer to corner portions of the polygonal substrate than the intermediate regions, and the control device is configured to be able to control the current to supply currents of different values respectively to the first power feeding members and the second power feeding members and/or the third power feeding members. 3. The plating apparatus according to claim 2 , wherein the control device is configured to be able to control the currents so that a value of a current that flows in the second power feeding members becomes larger than a value of a current that flows in the first power feeding members. 4. The plating apparatus according to claim 2 , wherein the control device is configured to be able to control the currents so that a current of a first value is supplied to the first power feeding members at a time of start of plating, and thereafter a current of a second value that is larger than the first value is supplied to the first power feeding members. 5. The plating apparatus according to claim 4 , wherein the control device is configured to be able to control the currents so that the current that flows in the first power feeding members increases stepwise from the first value to the second value. 6. The plating apparatus according to claim 4 , wherein the control device is configured to be able to control the currents so that the current which flows in the first power feeding members increases continuously from the first value to the second value. 7. The plating apparatus according to claim 2 , wherein the control device is configured to be able to control the currents so that a value of the current that flows in the third power feeding members becomes smaller than the value of the current that flows in the first power feeding members. 8. The plating apparatus according to claim 2 , wherein the third power feeding members are configured to contact regions other than points of intersection of the sides of the polygonal substrate.
characterised by the mechanical construction of the susceptor, stage or support · CPC title
by plating, e.g. electroless plating or electroplating · CPC title
comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu · CPC title
Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells · CPC title
Tanks; Installations therefor · CPC title
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