Compositions and methods using same for deposition of silicon-containing films

Patent metadata

Field	Value
Publication number	US-10316407-B2
Application number	US-201515520330-A
Country	US
Kind code	B2
Filing date	Oct 23, 2015
Priority date	Oct 24, 2014
Publication date	Jun 11, 2019
Grant date	Jun 11, 2019

Abstract

Described herein are compositions and methods using same for forming a silicon-containing film or material such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film in a semiconductor deposition process, such as without limitation, a plasma enhanced atomic layer deposition of silicon-containing film.

First claim

The invention claimed is:

1. A composition for depositing a silicon nitride or silicon oxide film, the composition comprising:
at least one silicon precursor compound selected from the group consisting of Formula IIA, Formula IIB, and Formula IID:

wherein substituent R is independently selected from a halide atom, a linear C 1 to C 10 alkyl group; a branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 12 alkenyl group, a linear or branched C 3 to C 12 alkenyl group, a linear or branched C 3 to C 12 alkynyl group, a C 4 to C 10 cyclic alkyl group, and a C 6 to C 10 aryl group.

2. The composition of claim 1 wherein the at least one silicon precursor compound is at least one compound represented by Formula IIB.

3. A composition for forming a silicon-containing material:
(a) at least one silicon precursor compound having the following Formulae IIA through IID:

wherein substituent R is independently selected from a halide atom, a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 12 alkenyl group, a linear or branched C 3 to C 12 alkenyl group, a linear or branched C 3 to C 12 alkynyl group, a C 4 to C 10 cyclic alkyl group, and a C 6 to C 10 aryl group; and
(b) a solvent wherein the solvent has a boiling point and the difference between the boiling point of the solvent and a boiling point of the silicon precursor is 40° C. or less.

4. The composition of claim 3 wherein the solvent is at least one selected from the group consisting of ether, tertiary amine, alkyl hydrocarbon, aromatic hydrocarbon, and tertiary aminoether.

5. The composition of claim 3 wherein the solvent is at least one selected from the group consisting of octane, ethylcyclohexane, cyclooctane, and toluene.

6. The composition of claim 1 or 3 wherein the at least one silicon precursor compound is bis(disilylamino)silane.

7. A method for depositing a silicon nitride film on at least a portion of a surface of a substrate, the method comprising:
placing the substrate into a reactor;
introducing into the reactor at least one silicon precursor compound selected from the group consisting of Formula IIA, Formula IIB, and Formula IID:

wherein substituent R is independently selected from a halide atom, a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 12 alkenyl group, a linear or branched C 3 to C 12 alkenyl group, a linear or branched C 3 to C 12 alkynyl group, a C 4 to C 10 cyclic alkyl group, and a C 6 to C 10 aryl group, under conditions sufficient to provide a chemisorbed layer;
c. purging the reactor with a purge gas;
d. introducing a plasma source comprising nitrogen into the reactor to react with at least a portion of the chemisorbed layer; and
e. optionally purge the reactor with an inert gas; and wherein the steps b through e are repeated until a desired thickness of the silicon nitride film is obtained.

8. The method of claim 7 wherein the plasma source is selected from the group consisting of nitrogen plasma, nitrogen/helium plasma, nitrogen/argon plasma, ammonia plasma, ammonia/helium plasma, ammonia/argon/plasma, helium plasma, argon plasma, hydrogen plasma, hydrogen/helium plasma, hydrogen/argon plasma, organic amine plasma, and mixtures thereof.

9. The method of claim 7 wherein the at least one silicon precursor compound comprises bis(disilylamino)silane.

10. The method of claim 7 wherein the plasma in step d is generated at a power density ranging from about 0.01 to about 1.5 W/cm 2 .

11. The method of claim 7 wherein the at least one silicon precursor compound is at least one compound represented by Formula IIB.

Assignees

• Versum Mat Us Llc

Inventors

• Lei Xinjian
• Kim Moo-Sung
• Macdonald Matthew R
• Xiao Manchao

Classifications

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6689

  the compound being a silazane · CPC title

• H10P14/6687

  the compound comprising silicon and nitrogen · CPC title

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title