Sputtering Target, Method For Manufacturing Sputtering Target, And Method For Forming Thin Film
US-2017016108-A1 · Jan 19, 2017 · US
Method for manufacturing sputtering target
US10316404B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10316404-B2 |
| Application number | US-201515537915-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 16, 2015 |
| Priority date | Dec 26, 2014 |
| Publication date | Jun 11, 2019 |
| Grant date | Jun 11, 2019 |
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- Title
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Abstract
Official abstract text for this publication.
A sputtering target including an oxide with a low impurity concentration is provided. Provided is a method for manufacturing a sputtering target, including a first step of preparing a mixture including indium, zinc, an element M (the element M is aluminum, gallium, yttrium, or tin), and oxygen; a second step of raising a temperature of the mixture from a first temperature to a second temperature in a first atmosphere containing nitrogen at a concentration of higher than or equal to 90 vol % and lower than or equal to 100 vol %; and a third step of lowering the temperature of the mixture from the second temperature to a third temperature in a second atmosphere containing oxygen at a concentration of higher than or equal to 10 vol % and lower than or equal to 100 vol %.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing a sputtering target comprising: a first step of preparing a mixture including indium, zinc, an element M, and oxygen, wherein the element M is aluminum, gallium, yttrium, or tin; a second step of raising a temperature of the mixture from a first temperature to a second temperature in a first atmosphere containing nitrogen at a concentration of higher than or equal to 90 vol % and lower than or equal to 100 vol %; and a third step of lowering the temperature of the mixture from the second temperature to a third temperature in a second atmosphere containing oxygen at a concentration of higher than or equal to 10 vol % and lower than or equal to 100 vol %. 2. The method for manufacturing a sputtering target according to claim 1 , wherein the first atmosphere comprises a gas with a dew point of lower than −60° C. 3. The method for manufacturing a sputtering target according to claim 1 , wherein the second atmosphere comprises a gas with a dew point of lower than −60° C. 4. The method for manufacturing a sputtering target according to claim 1 , wherein the first temperature is higher than or equal to 10° C. and lower than or equal to 300° C. 5. The method for manufacturing a sputtering target according to claim 1 , wherein the second temperature is higher than or equal to 800° C. and lower than or equal to 1700° C. 6. The method for manufacturing a sputtering target according to claim 1 , wherein the third temperature is higher than or equal to 10° C. and lower than or equal to 300° C. 7. A method for manufacturing a sputtering target comprising: a first step of preparing a mixture including indium, zinc, an element M and oxygen, wherein the element M is aluminum, gallium, yttrium, or tin; a second step of raising a temperature of the mixture from a first temperature to a second temperature in a first atmosphere containing nitrogen at a concentration of higher than or equal to 90 vol % and lower than or equal to 100 vol %; a third step of maintaining the mixture at the second temperature in the first atmosphere for longer than or equal to 3 minutes and shorter than 24 hours; and a fourth step of lowering the temperature of the mixture from the second temperature to a third temperature in a second atmosphere containing oxygen at a concentration of higher than or equal to 10 vol % and lower than or equal to 100 vol %. 8. The method for manufacturing a sputtering target according to claim 7 , wherein the first atmosphere comprises a gas with a dew point of lower than −60° C. 9. The method for manufacturing a sputtering target according to claim 7 , wherein the second atmosphere comprises a gas with a dew point of lower than −60° C. 10. The method for manufacturing a sputtering target according to claim 7 , wherein the first temperature is higher than or equal to 10° C. and lower than or equal to 300° C. 11. The method for manufacturing a sputtering target according to claim 7 , wherein the second temperature is higher than or equal to 800° C. and lower than or equal to 1700° C. 12. The method for manufacturing a sputtering target according to claim 7 , wherein the third temperature is higher than or equal to 10° C. and lower than or equal to 300° C. 13. A method for manufacturing a sputtering target comprising: a first step of preparing a mixture including indium, zinc, an element M and oxygen, wherein the element M is aluminum, gallium, yttrium, or tin; a second step of raising a temperature of the mixture from a first temperature to a second temperature in a first atmosphere containing nitrogen at a concentration of higher than or equal to 90 vol % and lower than or equal to 100 vol %; a third step of maintaining the mixture at the second temperature in the first atmosphere for longer than or equal to 3 minutes and shorter than 24 hours; a fourth step of maintaining the mixture at the second temperature in a second atmosphere containing oxygen at a concentration of higher than or equal to 10 vol % and lower than or equal to 100 vol % for longer than or equal to 3 minutes and shorter than 24 hours; and a fifth step of lowering the temperature of the mixture from the second temperature to a third temperature in the second atmosphere. 14. The method for manufacturing a sputtering target according to claim 13 , wherein the first atmosphere comprises a gas with a dew point of lower than −60° C. 15. The method for manufacturing a sputtering target according to claim 13 , wherein the second atmosphere comprises a gas with a dew point of lower than −60° C. 16. The method for manufacturing a sputtering target according to claim 13 , wherein the first temperature is higher than or equal to 10° C. and lower than or equal to 300° C. 17. The method for manufacturing a sputtering target according to claim 13 , wherein the second temperature is higher than or equal to 800° C. and lower than or equal to 1700° C. 18. The method for manufacturing a sputtering target according to claim 13 , wherein the third temperature is higher than or equal to 10° C. and lower than or equal to 300° C.
Assignees
Inventors
Classifications
of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title
Composites · CPC title
based on tin oxides or stannates · CPC title
Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate · CPC title
Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina · CPC title
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- What does patent US10316404B2 cover?
- A sputtering target including an oxide with a low impurity concentration is provided. Provided is a method for manufacturing a sputtering target, including a first step of preparing a mixture including indium, zinc, an element M (the element M is aluminum, gallium, yttrium, or tin), and oxygen; a second step of raising a temperature of the mixture from a first temperature to a second temperatur…
- Who is the assignee on this patent?
- Semiconductor Energy Lab
- What technology area does this patent fall under?
- Primary CPC classification C23C14/3414. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jun 11 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).