Power semiconductor device comprising a substrate and load current terminal elements

Patent metadata

Field	Value
Publication number	US-10312213-B2
Application number	US-201715669159-A
Country	US
Kind code	B2
Filing date	Aug 4, 2017
Priority date	Aug 23, 2016
Publication date	Jun 4, 2019
Grant date	Jun 4, 2019

Abstract

The invention relates to a power semiconductor device with a substrate with a cooling device and power semiconductor components connected thereon, having load current terminal elements and a cooling device. Pressure devices have a pressure element is arranged movably in a direction normal (N) to the substrate, and an elastic deformation element between the pressure element and a load current terminal element. The pressure element presses the assigned load current terminal element against an electrically conductive contact area of the substrate via the elastic deformation element and provides electrically conductive pressure contacting of the assigned load current terminal element with the substrate. The electrical connection of the power semiconductor device is improved.

First claim

What is claimed is:

1. A power semiconductor device, comprising:
a substrate having at least one cooling device;
at least one power semiconductor component arranged on the substrate and electrically and conductively connected to the substrate;
a plurality of electrically conductive load current terminal element, on said substrate, said load current terminal elements further comprising:
at least one pressure device, each said pressure device further comprising:
at least one pressure element, arranged movably in a direction that is normal (N) to the substrate;
at least one elastic deformation element, arranged between the pressure element and said at least one assigned load current terminal element; and
the at least one pressure element pressing the at least one load current terminal element against an electrically conductive contact area of the substrate through the elastic deformation element and thereby providing an electrically conductive pressure contact between the at least one load current terminal element and said substrate; and

a pressure element receptacle device, comprising:
a first receptacle device for receiving said at least one pressure element, wherein at least one section of a respective said pressure element is arranged in the respective first receptacle device;
wherein the first receptacle device and the pressure elements have a shape such that the first receptacle device limits a movement of the pressure elements that are running perpendicularly to the direction of the normal (N) to the substrate by a positively locking engagement of the pressure elements with the first receptacle device.

2. The power semiconductor device, according to claim 1 , wherein:
the first receptacle device has an opening on a side facing away from the substrate, through which opening respectively a section of the at least one pressure element is movable in the direction of the normal (N) to the substrate; and
the first receptacle device and the pressure elements have a shape such that a movement of the pressure element in the direction of the normal (N) to the substrate away from the substrate is limited by a positively locking engagement of the pressure elements with the first receptacle device.

3. The power semiconductor device, according to claim 1 , wherein:
the at least one pressure element further comprise:
a pressure main element and a pin projecting from the pressure main element in a direction away from the substrate; and
a side surface of the pressure main element facing away from the pin of the pressure element presses onto the elastic deformation element in the direction of the normal (N) to the substrate.

4. The power semiconductor device, according to claim 1 , wherein:
the pressure element is connected to the elastic deformation element in at least one of a materially-bonded manner, a force-locking, and a positively locking manner.

5. The power semiconductor device, according to claim 1 , wherein:
the elastic deformation element is a spring; and
said spring selected from a group of springs consisting of: a helical spring, an elastomer spring, a crosslinked silicone rubber spring, a rubber spring, and a plastic foam spring.

6. The power semiconductor device, according to claim 5 , wherein:
the elastic deformation element is said helical spring;
said helical spring having an outermost coil arranged at an end (E 1 ) of the helical spring that faces the assigned load current terminal element; and
said end (E 1 ) of said outermost coil having at least one no-pitch section which has no pitch, wherein a surface of said no-pitch section facing the assigned load current terminal element is planar.

7. The power semiconductor device, according to claim 1 , wherein:
the at least one pressure device, further comprising:
an intermediate element between the elastic deformation element and the assigned load current terminal element; and
the pressure element urging the assigned load current terminal element against said electrically conductive contact area of the substrate through the elastic deformation element and the intermediate element.

8. The power semiconductor device, according to claim 7 , wherein:
the intermediate element is connected to the elastic deformation element in at least one of a materially-bonded manner, a force-locking manner, and a positively locking manner.

9. The power semiconductor device, according to claim 8 , wherein:
the intermediate element further comprises:
an intermediate main element and a pin projecting from the intermediate main element in the direction of the substrate; and
the pin of the intermediate element presses onto the assigned load current terminal element in the direction of the normal (N) to the substrate.

10. The power semiconductor device, according to claim 1 , wherein:
said at least one pressure device and said at least one pressure element are adjacent and are integral with one another.

11. The power semiconductor device, according to claim 1 , wherein:
the at least one pressure element respectively has a pressure main element and at least a first and a second pin projecting from the pressure main element in a direction normal (N) away from the substrate;
a side surface of the pressure main element facing away from the pin presses onto the elastic deformation element in the direction of the normal (N) to the substrate; and
in a portion of said at last one pressure device of said pressure element, at said at least first pin has a first pin-height and said second pin has a second pin-height that is different from said first pin-height.

12. The power semiconductor device, according to claim 1 , wherein:
the at least one load current terminal element has a substrate terminal element running in the direction of the normal (N) to the substrate; and
wherein the at least one pressure device has a mechanical contact with a region of the load current terminal elements arranged in direct proximity to the substrate terminal elements.

13. A power semiconductor device system, comprising:
at least a first and a second power semiconductor device;
each said power semiconductor device, further comprising:
a substrate having at least one cooling device;
at least one power semiconductor component arranged on the substrate and electrically and conductively connected to the substrate;
a plurality of electrically conductive load current terminal element, on said substrate, said load current terminal elements further comprising:
at least one pressure device, each said pressure device further comprising:
at least one pressure element, arranged movably in a direction that is normal (N) to the substrate;
at least one elastic deformation element, arranged between the pressure element and said at least one assigned load current terminal element;
the at least one pressure element pressing the at least one load current terminal element against an electrically conductive contact area of the substrate through the elastic deformation element and thereby providing an electrically conductive pressure contact between the at least one load current terminal element and said substrate; and
wherein the second power semiconductor device is arranged on the first power semiconductor device; and
an outer side of the cooling device of the second power semiconductor device faces the at least one pressure element of the first power semiconductor device and presses against the pressure element of the first power semiconductor device in the direction of the substrate of the first power semiconductor device.

14. The power semiconductor system, according to claim 1

Assignees

• Semikron Elektronik Gmbh & Co Kg

Inventors

• Beck Markus
• Schneider Alexander
• Kulas Hartmut
• Graschl Patrick
• Zeller Christian

Classifications

• H10W90/00

  Package configurations · CPC title

• H10W40/47 Primary

  by flowing liquids, e.g. forced water cooling · CPC title

• H10W72/00 Primary

  Interconnections or connectors in packages · CPC title

• H01L23/473

  Electricity · mapped topic

• H01L24/72 Primary

  Electricity · mapped topic