VCSEL with elliptical aperture having reduced rin

Patent metadata

Field	Value
Publication number	US-10305254-B2
Application number	US-201715707540-A
Country	US
Kind code	B2
Filing date	Sep 18, 2017
Priority date	Sep 18, 2017
Publication date	May 28, 2019
Grant date	May 28, 2019

Abstract

A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than −140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.

First claim

The invention claimed is:

1. A VCSEL comprising:
an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being from about 0.6 to about 0.8, the VCSEL having a relative intensity noise (MN) of less than or about −140 dB/Hz; and
one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape.

2. The VCSEL of claim 1 , further comprising an elliptical emission aperture having same dimensions of the elliptical oxide aperture.

3. The VCSEL of claim 2 , further comprising an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture.

4. The VCSEL of claim 3 , wherein the elliptical contact is C-shaped.

5. The VCSEL of claim 1 wherein the one or more trenches are trapezoidal shaped trenches.

6. The VCSEL of claim 5 , further comprising a mesa having the elliptical oxide aperture, oxidized region, elliptical emission aperture, elliptical contact, and one or more trenches in the elliptical shape.

7. The VCSEL of claim 6 , further comprising a contact pad and an electrical connector that electrically connects the contact pad with the elliptical contact.

8. A plurality of VCSELs, each VCSEL being the VCSEL of claim 1 , the plurality of VCSELs being a group of VCSELs with a normal quantile of at least or about 0.9 (90%) having at least a standard of acceptability.

9. The plurality of VCSELs of claim 8 , wherein the plurality of VCSELs being a group of VCSELs with the normal quantile of at least about 0.9 (90%) have the RIN of less than or about −141 dB/Hz.

10. The plurality of VCSELs of claim 9 , each VCSEL being on a single wafer.

11. The plurality of VCSELs of claim 10 , each VCSEL having the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being from about 0.64 to about 0.7.

12. A method of designing a VCSEL, the method comprising:
preparing a plurality of VCSELs that each have an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, an ellipticity of each VCSEL being defined by a short radius and a long radius of the elliptical oxide aperture with a radius ratio (short radius)/(long radius) being from about 0.6 to about 0.8, the plurality of VCSELs having a plurality of different radius ratios;
operating the plurality of VCSELs to emit light;
testing each VCSEL for its relative intensity noise (RIN);
grouping each VCSEL into a group for a normal quantile of a standard of acceptability; and
identifying at least one radius ratio for a normal quantile group of VCSELs having a RIN less than or about −140 dB/Hz.

13. The method of claim 12 , wherein the preparing includes manufacturing the plurality of physical VCSELs.

14. The method of claim 12 , wherein the preparing includes digitally creating the plurality of VCSELs to be simulated and the operating includes simulating emission of light from the plurality of VCSELs.

15. The method of claim 12 , wherein the normal quantile group is at least or about 0.9 (90%).

16. The method of claim 12 , comprising recording and storing the identified at least one radius ratio onto a non-transitory tangible medium.

17. The method of claim 16 , comprising recording and storing the RIN and normal quantile for the identified at least one radius ratio into the non-transitory tangible medium so as to be linked with the identified at least one radius ratio.

18. A method of manufacturing a VCSEL, the method comprising:
obtaining a radius ratio for an elliptical oxide aperture for a VCSEL having a relative intensity noise (RIN) of less than or about −140 dB/Hz;
identifying a short radius dimension and a large radius dimension for the radius ratio;
preparing a VCSEL stack of layers;
oxidizing at least a portion of the VCSEL stack of layers to form the elliptical oxide aperture within a lateral oxidized region so as to have the radius ratio, short radius, and large radius; and
forming one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape.

19. The method of claim 18 , comprising:
preparing and oxidizing a plurality of VCSELs to have the elliptical oxide aperture within a lateral oxidized region so as to have the radius ratio, short radius, and large radius, the plurality of VCSELs being a group of VCSELs having a normal quantile of at least or about 0.9 (90%) having or at least a standard of acceptability.

Assignees

• Finisar Corp

Inventors

• Gazula Deepa
• Chitica Nicolae
• Chacinski Marek
• Landry Gary
• Tatum Jim

Classifications

• H01S5/18322

  Position of the structure · CPC title

• H01S5/18394

  Apertures, e.g. defined by the shape of the upper electrode · CPC title

• H01S5/18338 Primary

  Non-circular shape of the structure · CPC title

• H01S5/1835

  Non-circular mesa · CPC title

• H01S5/18352

  Mesa with inclined sidewall · CPC title