Multicolor LED and method of fabricating thereof

Patent metadata

Field	Value
Publication number	US-10304992-B2
Application number	US-201715634178-A
Country	US
Kind code	B2
Filing date	Jun 27, 2017
Priority date	Jun 7, 2013
Publication date	May 28, 2019
Grant date	May 28, 2019

Abstract

A device includes a support including at least a first area and a second area, and a plurality of first light emitting devices located over the first area of the support, each first light emitting device containing a first growth template including a first nanostructure, and each first light emitting device has a first peak emission wavelength. The device also includes a plurality of second light emitting devices located over the second area of the support, each second light emitting device containing a second growth template including a second nanostructure, and each second light emitting device has a second peak emission wavelength different from the first peak emission wavelength. Each first growth template differs from each second growth template.

First claim

The invention claimed is:

1. A III-V semiconductor nanowire device, comprising:
a plurality of III-V nanopyramids extending through first apertures in a first area of a growth mask located over a substrate; and
a plurality of III-V nanowires extending through second apertures in a second area of the growth mask,
wherein:
the first apertures are larger than the second apertures; and
a ratio of p-planes to m-planes in the plurality of III-V nanopyramids is different from a ratio of p-planes to m-planes in the plurality of III-V nanowires.

2. The device of claim 1 , wherein the plurality of III-V nanopyramids have a smaller height than the III-V nanowires.

3. The device of claim 2 , wherein the plurality of III-V nanowires have a height of 0.1 to 5 microns.

4. The device of claim 1 , wherein each first aperture is spaced further apart from adjacent first apertures than each second aperture is spaced from adjacent second apertures.

5. The device of claim 1 , wherein the growth mask comprises a silicon nitride layer.

6. The device of claim 1 , wherein:
each of the plurality of III-V nanopyramids comprises a first nanowire core; and
each of the plurality of III-V nanowires comprises a second nanowire core.

7. The device of claim 6 , further comprising:
at least one first template layer around the first nanowire core, such that the first template layer extends laterally beyond the first aperture over the growth mask;
at least one second template layer around the second nanowire core, such that the second template layer extends laterally beyond the second aperture over the growth mask;
first and second active regions located on respective first and second template layers; and
first and second junction forming elements located on respective first and second active regions to form respective first and second light emitting devices.

8. The device of claim 7 , wherein:
each first active region comprises at least one first quantum well having a first band gap;
each second active region comprises at least one second quantum well having a second band gap different from the first band gap;
each first quantum well contains a higher amount of indium and a longer peak emission wavelength than each second quantum well due to the difference in the p-plane facet area.

9. The device of claim 8 , wherein:
each first nanowire core comprises a first conductivity type semiconductor material;
each second nanowire core comprises the first conductivity type semiconductor material;
each first junction forming element comprises a semiconductor material of a second conductivity type different from the first conductivity type to form a p-n or p-i-n junction with the first growth template and the first active region; and
each second junction forming element comprises a semiconductor material of the second conductivity type different from the first conductivity type to form a p-n or p-i-n junction with the second growth template and the second active region.

10. The device of claim 9 , wherein:
each first and second nanowire core comprises a n-type GaN nanowire core;
each first and second quantum well comprises an indium gallium nitride shell; and
each first and second junction forming element comprise a p-type GaN semiconductor shell.

Assignees

• Glo Ab

Inventors

• Ohlsson Jonas
• Svensson Carl Patrik Theodor

Classifications

• H01L33/32

  Electricity · mapped topic

• H01L33/0012

  Electricity · mapped topic

• H01L33/0016

  Electricity · mapped topic

• H01L33/005

  Electricity · mapped topic

• H01L33/06 Primary

  Electricity · mapped topic