Solid state light emitting devices based on crystallographically relaxed structures

US8969890B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8969890-B2
Application numberUS-201113879824-A
CountryUS
Kind codeB2
Filing dateOct 20, 2011
Priority dateNov 4, 2010
Publication dateMar 3, 2015
Grant dateMar 3, 2015

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

The present invention discloses a method for manufacturing a solid state light emitting device having a plurality of light-sources, the method comprising the steps of: providing a substrate having a growth surface; providing a mask layer on the growth surface, the mask layer having a plurality of openings through which the growth surface is exposed, wherein a largest lateral dimension of each of said openings is less than 0.3 μm and wherein the mask layer may comprise a first mask layer portion and a second mask layer portion, having the same surface area and comprising a plurality of openings wherein the first mask layer portion exhibits a first ratio between an exposed area of the growth surface and an unexposed area of the growth surface, and wherein the second mask layer portion exhibits a second ratio between an exposed area of the growth surface and an unexposed area of said growth surface, the second ratio being different from the first ratio; growing a base structure on the growth surface in each of the openings of the mask layer; and growing at least one light-generating quantum well layer on the surface of each of the base structures.

First claim

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The invention claimed is: 1. A method for manufacturing a solid state light emitting device having a plurality of light sources, the method comprising the steps of: providing a substrate having a growth surface; providing a mask layer on said growth surface, said mask layer having a plurality of openings through which said growth surface is exposed, wherein a largest lateral dimension of each of said openings is less than 0.3 μm and wherein said mask layer comprises a first mask…

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What does patent US8969890B2 cover?
The present invention discloses a method for manufacturing a solid state light emitting device having a plurality of light-sources, the method comprising the steps of: providing a substrate having a growth surface; providing a mask layer on the growth surface, the mask layer having a plurality of openings through which the growth surface is exposed, wherein a largest lateral dimension of each o…
Who is the assignee on this patent?
Balkenende Abraham Rudolf, Verschuuren Marcus Antonius, Immink George, and 1 more
What technology area does this patent fall under?
Primary CPC classification H10H20/821. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).