Organic photodiodes, organic x-ray detectors and x-ray systems
US-2016111473-A1 · Apr 21, 2016 · US
US10297774B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10297774-B2 |
| Application number | US-201615350472-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 14, 2016 |
| Priority date | Jul 31, 2014 |
| Publication date | May 21, 2019 |
| Grant date | May 21, 2019 |
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Provided is a photoelectric conversion element including: a lower electrode, a charge blocking layer which suppresses injection of a charge from the lower electrode, an organic layer which includes a photoelectric conversion layer, and an upper electrode which includes a transparent electrode layer, which are laminated in this order on a substrate. The photoelectric conversion layer is configured of an amorphous film and has a bulk hetero-structure of a P-type organic semiconductor and an N-type organic semiconductor formed of fullerenes. A difference between the ionization potential of the photoelectric conversion layer having the bulk hetero-structure and the electron affinity of the N-type semiconductor is 1.30 eV or greater.
Opening claim text (preview).
What is claimed is: 1. A photoelectric conversion element comprising: a lower electrode; a charge blocking layer which suppresses injection of a charge from the lower electrode; an organic layer which includes a photoelectric conversion layer; and an upper electrode which includes a transparent electrode layer, which are laminated in this order on a substrate, wherein the photoelectric conversion layer is configured of an amorphous film and has a bulk hetero-structure of a P-type organic semiconductor and an N-type organic semiconductor formed of fullerenes, a difference between an ionization potential of the photoelectric conversion layer having the bulk hetero-structure and an electron affinity of the N-type semiconductor is 1.30 eV or greater, and the charge blocking layer is formed of an electron donating organic material shown in the following Chemical Formula 2 or Chemical Formula 3: 2. An imaging element comprising a photoelectric conversion element, the photoelectric conversion element comprising: a lower electrode; a charge blocking layer which suppresses injection of a charge from the lower electrode; an organic layer which includes a photoelectric conversion layer; and an upper electrode which includes a transparent electrode layer, which are laminated in this order on a substrate, wherein the photoelectric conversion layer is configured of an amorphous film and has a bulk hetero-structure of a P-type organic semiconductor and an N-type organic semiconductor formed of fullerenes, a difference between an ionization potential of the photoelectric conversion layer having the bulk hetero-structure and an electron affinity of the N-type semiconductor is 1.30 eV or greater, and the charge blocking layer is formed of an electron donating organic material shown in the following Chemical Formula 2 or Chemical Formula 3: 3. The imaging element according to claim 2 , further comprising: a charge accumulation unit which accumulates a charge generated in the photoelectric conversion layer of the photoelectric conversion element; and a connection unit which transmits the charge of the photoelectric conversion layer to the charge accumulation unit.
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