Block copolymer

Patent metadata

Field	Value
Publication number	US-10295908-B2
Application number	US-201515515290-A
Country	US
Kind code	B2
Filing date	Sep 30, 2015
Priority date	Sep 30, 2014
Publication date	May 21, 2019
Grant date	May 21, 2019

Abstract

The present application relates to a monomer, a method for preparing a block copolymer, a block copolymer, and uses thereof. Each monomer of the present application exhibits an excellent self-assembling property and is capable of forming a block copolymer to which a variety of required functions are granted as necessary without constraint.

First claim

What is claimed is:

1. A block copolymer comprising a first block having a structural unit represented by Structural Formula 1 below:

wherein R represents a hydrogen atom or an alkyl group;
X represents an oxygen atom, a sulfur atom, —NR 1 —, —S(═O) 2 —, a carbonyl group, an alkylene group, an alkenylene group, an alkynylene group, —C(═O)—X 1 — or —X 1 —C(═O)—, wherein the X 1 represents a single bond, an oxygen atom, a sulfur atom, —NR 1 —, —S(═O) 2 —, an alkylene group, an alkenylene group or an alkynylene group, wherein the R 1 represents a hydrogen atom or an alkyl group; and
Y represents an aryl group substituted with at least one of a substituent -Q-P, wherein the Q represents —K—C(═O)—X 2 —, —X 2 —C(═O)—K— or a cycloalkylene group, and the P represents a chain that contains 3 or more chain-forming atoms, wherein the X 2 represents an oxygen atom, a sulfur atom, —S(═O) 2 —, an alkylene group, an alkenylene group or an alkynylene group, the K represents a linear or branched alkenylene group.

2. The block copolymer of claim 1 , wherein the X of the Structural Formula 1 is —C(═O)—O— or —O—C(═O)—.

3. The block copolymer of claim 1 , wherein the Y of the Structural Formula 1 is an aryl group with 6 to 12 carbons and is substituted in at least one part by the substituent -Q-P.

4. The block copolymer of claim 1 , wherein the Y of the Structural Formula 1 is a phenyl group substituted with at least one part of the substituent -Q-P, wherein the substituent -Q-P is substituted in a para position (with respect to the X in the Structural Formula 1) of the phenyl group.

5. The block copolymer of claim 1 , wherein the Q of the substituent -Q-P is —K—C(═O)—O— or —O—C(═O)—K—,
wherein the K is an alkylene group with 2 to 20 carbons.

6. The block copolymer of claim 1 , wherein the Q of the substituent -Q-P is a cycloalkylene group with 3 to 12 carbons.

7. The block copolymer of claim 1 , wherein the P of the substituent -Q-P is an alkyl group with 3 to 30 carbons.

8. A block copolymer comprising a first block having a structural unit represented by Structural Formula 1 and a second block which has an aromatic structure that includes one or more halogen atoms

wherein R represents a hydrogen atom or an alkyl group;
X represents a single bond, an oxygen atom, a sulfur atom, —NR 1 —, —S(═O) 2 —, a carbonyl group, an alkylene group, an alkenylene group, an alkynylene group, —C(═O)—X 1 — or —X 1 —C(═O)—, wherein the X 1 represents a single bond, an oxygen atom, a sulfur atom, —NR 1 —, —S(═O) 2 —, an alkylene group, an alkenylene group or an alkynylene group, wherein the R 1 represents a hydrogen atom or an alkyl group; and
Y represents an aryl group substituted with at least one of a substituent -Q-P, wherein the Q represents —K—C(═O)—X 2 —, —X 2 —C(═O)—K— or a cycloalkylene group, and the P represents a chain that contains 3 or more chain-forming atoms, wherein the X 2 represents an oxygen atom, a sulfur atom, —S(═O) 2 —, an alkylene group, an alkenylene group or an alkynylene group, the K represents an alkenylene group.

9. The block copolymer of claim 8 , wherein the second block is represented by Structural Formula 2 below:

where in the Structural Formula 2, X 2 represents a single bond, an oxygen atom, a sulfur atom, —S(═O) 2 —, an alkylene group, an alkenylene group, an alkynylene group, —C(═O)—X 1 — or —X 1 —C(═O)—, wherein the X 1 represents a single bond, an oxygen atom, a sulfur atom, —S(═O) 2 —, an alkylene group, an alkenylene group or an alkynylene group; and
W represents an aryl group that includes at least one halogen atom.

10. The block copolymer of claim 8 , wherein the second block is represented by Structural Formula 3 below:

where in the Structural Formula 3, X 2 represents a single bond, an oxygen atom, a sulfur atom, —S(═O) 2 —, an alkylene group, an alkenylene group, an alkynylene group, —C(═O)—X 1 — or —X 1 —C(═O)—, wherein the X 1 represents a single bond, an oxygen atom, a sulfur atom, —S(═O) 2 —, an alkylene group, an alkenylene group or an alkynylene group; and
each of R 1 to R 5 independently represents a hydrogen atom, an alkyl group, a haloalkyl group or a halogen atom, wherein one or more halogen atoms are included in positions marked as R 1 to R 5 .

11. The block copolymer of claim 10 , wherein three or more halogen atoms are included in the positions marked as R 1 to R 5 .

12. The block copolymer of claim 10 , wherein five or more halogen atoms are included in the positions marked as R 1 to R 5 .

13. The block copolymer of claim 8 , wherein the halogen atom is a fluorine atom.

14. A polymer film comprising the block copolymer of claim 1 , wherein the block copolymer of claim 1 is self-assembled.

15. A method of forming a polymer film, comprising:
forming the polymer film on a substrate, wherein the polymer film comprises the block copolymer of claim 1 , wherein the block copolymer of claim 1 is self-assembled.

16. A method of forming a pattern, the method comprising:
selectively removing the first block or another block of the block copolymer of claim 1 from a laminate comprising a substrate and a polymer film that is formed on the substrate and includes the block copolymer of claim 1 , wherein the block copolymer of claim 1 is self-assembled.

Assignees

• Lg Chemical Ltd

Inventors

• Park No Jin
• Kim Jung Keun
• Lee Je Gwon
• Yoon Sung Soo
• Ku Se Jin
• Lee Mi Sook
• Choi Eun Young
• Ryu Hyung Ju

Classifications

• H10P95/066

  the removal being a selective chemical etching step, e.g. selective dry etching through a mask · CPC title

• H10P95/064

  the removal being chemical etching · CPC title

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P76/204

  of organic photoresist masks · CPC title

• C08F220/301

  and one oxygen in the alcohol moiety · CPC title