Semiconductor detector

Patent metadata

Field	Value
Publication number	US-10295679-B2
Application number	US-201715609476-A
Country	US
Kind code	B2
Filing date	May 31, 2017
Priority date	Aug 31, 2016
Publication date	May 21, 2019
Grant date	May 21, 2019

Abstract

A semiconductor may include a semiconductor detection material including a first side and a second side opposite to each other, a cathode disposed on the first side, and an anode disposed on the second side. The anode includes an array of pixel anodes defining detection pixels of the semiconductor detector, and intermediate anodes disposed between adjacent ones of the pixel anodes. According to an embodiment of the present disclosure, it is possible to achieve signal correction to improve the energy resolution and the signal-to-noise ratio of the detector.

First claim

What is claimed is:

1. A semiconductor detector, comprising:
a semiconductor detection material comprising a first side and a second side opposite to each other;
a cathode disposed on the first side; and
an anode disposed on the second side,
wherein the anode comprises an array of pixel anodes defining detection pixels of the semiconductor detector and intermediate anodes disposed between adjacent ones of the pixel anodes, and
wherein the intermediate anodes are configured to correct a signal collected by the pixel anodes, without constituting a pixel of a final detection result.

2. The detector of claim 1 , further comprising a central anode disposed between adjacent ones of the intermediate anodes.

3. The detector of claim 2 , wherein the central anode has a square, circular, elliptical, rectangular, or rhombic shape.

4. The detector of claim 2 , wherein the central anode comprises at least one selected from: gold, platinum, nickel, titanium, or indium.

5. The detector of claim 2 , further comprising a signal processing circuit configured to determine a detection signal for each pixel anode of the pixel anode array based on a signal collected on the pixel anode and a signal collected on the central anode(s) and/or the intermediate anode(s) adjacent to the pixel anode.

6. The detector of claim 5 , wherein the signal processing circuit is configured to determine the detection signal based on a weighted sum.

7. The detector of claim 5 , wherein the signal processing circuit is configured to determine the detection signal of the pixel anode to be zero when the signal collected on the central anode(s) and/or the intermediate node(s) adjacent to the pixel anode has an amplitude greater than that of the signal collected on the pixel anode.

8. The detector of claim 1 , further comprising a signal processing circuit configured to determine a detection signal for each pixel anode of the pixel anode array based on a signal collected on the pixel anode and a signal collected on the intermediate anode(s) adjacent to the pixel anode.

9. The detector of claim 8 , wherein the signal processing circuit is configured to determine the detection signal based on a weighted sum.

10. The detector of claim 8 , wherein the signal processing circuit is configured to determine the detection signal of the pixel anode to be zero when the signal collected on the intermediate anode(s) adjacent to the pixel anode has an amplitude greater than that of the signal collected on the pixel anode.

11. The detector of claim 1 , wherein the pixel anode array comprises a one-dimensional linear array, a two-dimensional planar array or a trapezoidal structure of the pixel anodes.

12. The detector of claim 1 , wherein the pixel anodes each have a square, rectangular, circular, or elliptical shape.

13. The detector of claim 1 , wherein the intermediate anodes each have a rectangular, elliptical, curved, or rhombic shape.

14. The detector of claim 1 , wherein the semiconductor detection material comprises CdZnTe, Ge, CdTe, HgI 2 , PbI 2 , TlBr, or GaAs.

15. The detector of claim 1 , wherein the pixel anodes and/or the intermediate anodes each comprise at least one selected from: gold, platinum, nickel, titanium, or indium.

16. The detector of claim 1 , wherein the cathode is of a planar type, a pixel type, or a stripe type.

17. A detection method comprising:
providing radiation on a semiconductor detector, the semiconductor detector, comprising:
a semiconductor detection material comprising a first side and a second side opposite to each other,
a cathode disposed on the first side, and
an anode disposed on the second side,
wherein the anode comprises an array of pixel anodes defining detection pixels of the semiconductor detector and intermediate anodes disposed between adjacent ones of the pixel anodes, and
wherein the intermediate anodes are configured to correct a signal collected by the pixel anodes, without constituting a pixel of a final detection result; and

obtaining a measurement of the radiation using the anode of the semiconductor detector.

18. The method of claim 17 , further comprising determining a detection signal for each pixel anode of the pixel anode array based on a signal collected on the pixel anode and a signal collected on the intermediate anode(s) adjacent to the pixel anode.

19. The method of claim 18 , further comprising determining the detection signal based on a weighted sum.

20. The method of claim 18 , further comprising determining the detection signal of the pixel anode to be zero when the signal collected on the intermediate anode(s) adjacent to the pixel anode has an amplitude greater than that of the signal collected on the pixel anode.

Assignees

• Nuctech Co Ltd

Inventors

• Zhang Lan
• Du Yingshuai
• Li Bo
• Wu Zonggui
• Li Jun
• Cao Xuepeng
• Hu Haifan
• Gu Jianping
• Xu Guangming
• Liu Bicheng

Classifications

• G01T1/241 Primary

  Electrode arrangements, e.g. continuous or parallel strips or the like · CPC title

• G01T1/00 Primary

  Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation (G01T3/00, G01T5/00 take precedence) · CPC title

• G01T1/24 Primary

  with semiconductor detectors · CPC title

• H01L31/0324

  Electricity · mapped topic

• H01L31/022408

  Electricity · mapped topic