Controlled Fabrication of Nanopores in Nanometric Solid State Materials
US-2017158487-A1 · Jun 8, 2017 · US
US10294524B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10294524-B2 |
| Application number | US-201615088549-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 1, 2016 |
| Priority date | Apr 1, 2015 |
| Publication date | May 21, 2019 |
| Grant date | May 21, 2019 |
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This disclosure provides systems, methods, and apparatus related to few-layer and monolayer hexagonal boron nitride having a pore therein. In one aspect, a method comprises providing a sheet of hexagonal boron nitride (h-BN). A defect is created in the sheet of h-BN. The sheet of h-BN is heated to a temperature above about 500° C. The defect in the sheet of h-BN is irradiated with charged particles to enlarge the defect to a hexagonal-shaped pore or a parallelogram-shaped pore in the sheet of h-BN.
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What is claimed is: 1. A method comprising: (a) providing a sheet of hexagonal boron nitride (h-BN); (b) creating a defect in the sheet of h-BN by depositing a catalyst on the sheet of h-BN and heating the catalyst; (c) heating the sheet of h-BN to a temperature above about 500° C.; and (d) irradiating the defect in the sheet of h-BN with charged particles to enlarge the defect to a hexagonal-shaped pore or a parallelogram-shaped pore in the sheet of h-BN. 2. The method of claim 1 , further comprising: fabricating the sheet of h-BN. 3. The method of claim 1 , wherein the charged particles comprise particles selected from a group consisting of electrons, protons, and alpha particles. 4. The method of claim 1 , wherein the charged particles comprise electrons, and wherein the electrons have energies of about 40 kV to 120 kV. 5. The method of claim 1 , wherein the hexagonal-shaped pore or the parallelogram-shaped pore in the sheet h-BN has a dimension of about 1 nanometer to 3 nanometers across the hexagonal-shaped pore or the parallelogram-shaped pore. 6. The method of claim 1 , wherein the catalyst comprises a transition metal. 7. The method of claim 1 , wherein the catalyst comprises a metal selected from a group consisting of iron, cobalt, and nickel. 8. The method of claim 1 , wherein the sheet of h-BN is heated to a temperature of about 700° C. in operation (c). 9. The material of claim 1 , wherein the sheet of h-BN comprises a monolayer of h-BN. 10. The method of claim 1 , wherein the catalyst is heated using a laser in operation (b). 11. The method of claim 1 , wherein the catalyst reacts with the sheet of h-BN to form the defect in operation (b). 12. The method of claim 1 , wherein the catalyst comprises a single atom of the catalyst. 13. The method of claim 1 , wherein the catalyst comprises a cluster of atoms of the catalyst. 14. The method of claim 1 , wherein the catalyst comprises a nanoparticle. 15. The method of claim 1 , wherein the catalyst has dimensions of about 1 nanometer or less than about 1 nanometer. 16. The method of claim 1 , wherein photolithography is used to define an area of the sheet of h-BN on which the catalyst is deposited in operation (b). 17. The method of claim 1 , wherein the charged particles comprise oxygen ions, nitrogen ions, argon ions, or gallium ions. 18. The method of claim 1 , wherein defect in the sheet of h-BN is irradiated with charged particles for about 15 seconds to 60 seconds in operation (d). 19. The method of claim 1 , further comprising: functionalizing the hexagonal-shaped pore or the parallelogram-shaped pore in the sheet of h-BN. 20. The method of claim 1 , wherein the catalyst is deposited on the sheet of h-BN in operation (b) by evaporation, chemical vapor deposition, atomic layer deposition, or sputtering.
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