Methods of generation of pores in sheets of hexagonal boron nitride and applications thereof

US10294524B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10294524-B2
Application numberUS-201615088549-A
CountryUS
Kind codeB2
Filing dateApr 1, 2016
Priority dateApr 1, 2015
Publication dateMay 21, 2019
Grant dateMay 21, 2019

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

This disclosure provides systems, methods, and apparatus related to few-layer and monolayer hexagonal boron nitride having a pore therein. In one aspect, a method comprises providing a sheet of hexagonal boron nitride (h-BN). A defect is created in the sheet of h-BN. The sheet of h-BN is heated to a temperature above about 500° C. The defect in the sheet of h-BN is irradiated with charged particles to enlarge the defect to a hexagonal-shaped pore or a parallelogram-shaped pore in the sheet of h-BN.

First claim

Opening claim text (preview).

What is claimed is: 1. A method comprising: (a) providing a sheet of hexagonal boron nitride (h-BN); (b) creating a defect in the sheet of h-BN by depositing a catalyst on the sheet of h-BN and heating the catalyst; (c) heating the sheet of h-BN to a temperature above about 500° C.; and (d) irradiating the defect in the sheet of h-BN with charged particles to enlarge the defect to a hexagonal-shaped pore or a parallelogram-shaped pore in the sheet of h-BN. 2. The method of claim 1 , further comprising: fabricating the sheet of h-BN. 3. The method of claim 1 , wherein the charged particles comprise particles selected from a group consisting of electrons, protons, and alpha particles. 4. The method of claim 1 , wherein the charged particles comprise electrons, and wherein the electrons have energies of about 40 kV to 120 kV. 5. The method of claim 1 , wherein the hexagonal-shaped pore or the parallelogram-shaped pore in the sheet h-BN has a dimension of about 1 nanometer to 3 nanometers across the hexagonal-shaped pore or the parallelogram-shaped pore. 6. The method of claim 1 , wherein the catalyst comprises a transition metal. 7. The method of claim 1 , wherein the catalyst comprises a metal selected from a group consisting of iron, cobalt, and nickel. 8. The method of claim 1 , wherein the sheet of h-BN is heated to a temperature of about 700° C. in operation (c). 9. The material of claim 1 , wherein the sheet of h-BN comprises a monolayer of h-BN. 10. The method of claim 1 , wherein the catalyst is heated using a laser in operation (b). 11. The method of claim 1 , wherein the catalyst reacts with the sheet of h-BN to form the defect in operation (b). 12. The method of claim 1 , wherein the catalyst comprises a single atom of the catalyst. 13. The method of claim 1 , wherein the catalyst comprises a cluster of atoms of the catalyst. 14. The method of claim 1 , wherein the catalyst comprises a nanoparticle. 15. The method of claim 1 , wherein the catalyst has dimensions of about 1 nanometer or less than about 1 nanometer. 16. The method of claim 1 , wherein photolithography is used to define an area of the sheet of h-BN on which the catalyst is deposited in operation (b). 17. The method of claim 1 , wherein the charged particles comprise oxygen ions, nitrogen ions, argon ions, or gallium ions. 18. The method of claim 1 , wherein defect in the sheet of h-BN is irradiated with charged particles for about 15 seconds to 60 seconds in operation (d). 19. The method of claim 1 , further comprising: functionalizing the hexagonal-shaped pore or the parallelogram-shaped pore in the sheet of h-BN. 20. The method of claim 1 , wherein the catalyst is deposited on the sheet of h-BN in operation (b) by evaporation, chemical vapor deposition, atomic layer deposition, or sputtering.

Assignees

Inventors

Classifications

  • C12Q1/6869Primary

    Methods for sequencing · CPC title

  • Investigating individual macromolecules, e.g. by translocation through nanopores (Coulter counters in general G01N15/12; fabrication methods for nanoscale apertures B81B1/00; sequencing of nucleic acids C12Q1/68) · CPC title

  • being a biochannel or pore · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10294524B2 cover?
This disclosure provides systems, methods, and apparatus related to few-layer and monolayer hexagonal boron nitride having a pore therein. In one aspect, a method comprises providing a sheet of hexagonal boron nitride (h-BN). A defect is created in the sheet of h-BN. The sheet of h-BN is heated to a temperature above about 500° C. The defect in the sheet of h-BN is irradiated with charged parti…
Who is the assignee on this patent?
Zettl Alexander K, Dunn Gabriel P, Gilbert Stephen M, and 1 more
What technology area does this patent fall under?
Primary CPC classification C12Q1/6869. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue May 21 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).