Intelligent bit line precharge for improved dynamic power

US10290345B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10290345-B2
Application numberUS-201615331704-A
CountryUS
Kind codeB2
Filing dateOct 21, 2016
Priority dateMar 28, 2016
Publication dateMay 14, 2019
Grant dateMay 14, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method and apparatus for writing data to a memory device are provided that do not change the precharge states for a bit line pair in a current write cycle if the current data bit is unchanged from the preceding write cycle.

First claim

Opening claim text (preview).

We claim: 1. A method of write driving a bit line pair, comprising: discharging a first bit line in the bit line pair while coupling a remaining second bit line in the bit line pair to a power supply node responsive to a first bit to be written through the bit line pair in a first write cycle; during the first write cycle, while the first bit line is discharged and the second bit line is coupled to the power supply node, coupling the bit line pair to a first bit cell to write the first bit into the first bit cell in the first write cycle; and in a second write cycle subsequent to the first write cycle, continuing to discharge the first bit line and to couple the second bit line to the power supply node without a precharging of the first bit line responsive to a second bit to be written in the second write cycle equaling the first bit. 2. The method of claim 1 , further comprising coupling the bit line pair to a second bit cell while the first bit line is discharged and the second bit line is coupled to the power supply node to write the second bit into the second bit cell in the second write cycle. 3. The method of claim 1 , further comprising: in response to an assertion of a data masking signal, coupling both the first bit line and the second bit line to the power supply node. 4. The method of claim 1 , wherein the discharging of the first bit line in the first write cycle occurs during a half cycle of a memory clock signal.

Assignees

Inventors

Classifications

  • Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines · CPC title

  • Data masking during input/output · CPC title

  • G11C11/419Primary

    Read-write [R-W] circuits · CPC title

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What does patent US10290345B2 cover?
A method and apparatus for writing data to a memory device are provided that do not change the precharge states for a bit line pair in a current write cycle if the current data bit is unchanged from the preceding write cycle.
Who is the assignee on this patent?
Qualcomm Inc
What technology area does this patent fall under?
Primary CPC classification G11C11/419. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue May 14 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).