Substrate processing apparatus, gas supply method, substrate processing method, and film forming method

Patent metadata

Field	Value
Publication number	US-10287682-B2
Application number	US-201715468563-A
Country	US
Kind code	B2
Filing date	Mar 24, 2017
Priority date	Mar 28, 2016
Publication date	May 14, 2019
Grant date	May 14, 2019

Abstract

A substrate processing apparatus includes: a process container configured to receive a substrate therein; a pressure detection part configured to measure an internal pressure of the process container; an exhaust-side valve installed in an exhaust pipe configured to exhaust an interior of the process container; a gas storage tank connected to the process container through a first gas supply pipe; a gas amount measuring part configured to measure an amount of gas stored in the gas storage tank; and a control valve installed in the first gas supply pipe and configured to control the internal pressure of the process container by changing an opening degree of the control valve based on the internal pressure of the process container which is detected by the pressure detection part and by controlling a flow path cross section through which the gas is supplied from the gas storage tank to the process container.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
a process container configured to receive a substrate therein;
a first gas supply pipe installed in an upstream-side of the process container;
an exhaust pipe installed in a downstream-side of the process container and configured to exhaust an interior of the process container;
a pressure sensor configured to measure an internal pressure of the process container;
an exhaust-side valve installed in the exhaust pipe;
a gas storage tank connected to the process container through the first gas supply pipe;
a mass flow controller installed in an upstream-side of the gas storage tank and configured to measure an amount of gas stored in the gas storage tank; and
a control valve installed in the first gas supply pipe and configured to allow an opening degree of the control valve to be changed and to control a flow path cross section of the first gas supply pipe; and
a controller configured to perform a feedback control of the control valve when a gas is supplied from the gas storage tank to the process container,
wherein, during the feedback control, a control signal is inputted to the control valve so as to change the opening degree of the control valve based on the internal pressure of the process container which is detected by the pressure sensor and so as to change the flow path cross section through which the gas is supplied from the gas storage tank to the process container such that the internal pressure of the process container is set to a predetermined constant pressure.

2. The apparatus of claim 1 , wherein the pressure sensor is installed in the exhaust pipe between the process container and the exhaust-side valve.

3. The apparatus of claim 1 , further comprising:
a second gas supply pipe connected to the gas storage tank,
wherein the controller includes a total flow rate counting part, and is further configured to output a control signal to the mass flow controller to transmit a flow rate information to the total flow rate counting part such that the total flow rate counting part measures and identifies, along with the mass flow controller, the total flow rate of the gas supplied to the gas storage tank through the second gas supply pipe.

4. The apparatus of claim 1 , wherein the controller is further configured to perform the feedback control of the control valve to change the opening degree such that the internal pressure of the process container reaches the predetermined constant pressure when the exhaust-side valve is fixed to have a predetermined opening degree and the amount of the gas measured by the mass flow controller reaches a predetermined amount.

5. The apparatus of claim 4 , wherein, when the gas is being stored in the gas storage tank, the controller is further configured to control the control valve to remain closed.

6. The apparatus of claim 1 , further comprising: a shut-off valve installed between the gas storage tank and the control valve,
wherein the controller is further configured to control the shut-off valve to remain closed when the gas is being stored in the gas storage tank.

7. The apparatus of claim 5 , wherein a time period during which the gas is supplied from the gas storage tank to the process container is set to a predetermined time period during which the predetermined amount of the gas stored in the gas storage tank is supplied into the process container while maintaining the predetermined constant pressure.

8. The apparatus of claim 7 , wherein the supply of the predetermined amount of the gas to the gas storage tank and the supply of the gas from the gas storage tank to the process container are repeated a plurality of times.

9. The apparatus of claim 1 , wherein the controller is further configured to control the exhaust-side valve and to perform the feedback control of the control valve based on the amount of the gas measured by the mass flow controller.

10. The apparatus of claim 1 , wherein the gas storage tank stores a raw material gas for film formation.

Assignees

• Tokyo Electron Ltd

Inventors

• Kikuchi Kazuyuki
• Okabe Tsuneyuki
• Fukushima Kohei

Classifications

• C23C16/45557

  Pulsed pressure or control pressure · CPC title

• C23C16/45561 Primary

  Gas plumbing upstream of the reaction chamber · CPC title

• C23C16/45546 Primary

  specially adapted for a substrate stack in the ALD reactor · CPC title

• C23C16/45544 Primary

  characterized by the apparatus · CPC title

• H10P72/06

  Apparatus for monitoring, sorting, marking, testing or measuring · CPC title