Semiconductor device and manufacturing method of semiconductor device

Patent metadata

Field	Value
Publication number	US-10283440-B2
Application number	US-201815903031-A
Country	US
Kind code	B2
Filing date	Feb 23, 2018
Priority date	Mar 22, 2016
Publication date	May 7, 2019
Grant date	May 7, 2019

Abstract

A semiconductor device includes: a frame; a first-external-terminal provided to a first side portion of the frame; a first substrate enclosed in the frame and having a first-conductive-layer at an upper surface; a first-semiconductor-element: mounted on the first-conductive-layer; having, on a lower surface, a first main electrode connecting with the first-conductive-layer; and having a second main electrode and a control electrode on an upper surface; a first terminal connecting portion establishing a connection between the first-external-terminal and an exposed portion of the first-conductive-layer between the first-semiconductor-element and the first-external-terminal; a first-external-control-terminal provided above a wire in the frame and between the first main electrode of the first-semiconductor-element and the first-external-terminal; and a first control terminal connecting portion establishing a connection: between the control electrode of the first-semiconductor-element and the first-external-control-terminal; and above a wire between the first main electrode of the first-semiconductor-element and the first-external-terminal.

First claim

What is claimed is:

1. A semiconductor device comprising:
a frame;
a first external terminal that is provided to a first side portion of the frame;
a first substrate that is enclosed in the frame and has a first conductive layer at an upper surface thereof;
a first semiconductor element that: is mounted on the first conductive layer; has, on a lower surface thereof, a first main electrode connecting with the first conductive layer; and has a second main electrode and a control electrode on an upper surface thereof;
a first terminal connecting portion that establishes a connection between the first external terminal and an exposed portion of the first conductive layer between the first semiconductor element and the first external terminal;
a first external control terminal that is provided above a wire that is in the frame and between the first main electrode of the first semiconductor element and the first external terminal; and
a first control terminal connecting portion that establishes a connection: between the control electrode of the first semiconductor element and the first external control terminal; and above the wire between the first main electrode of the first semiconductor element and the first external terminal, wherein
an upper surface of the first conductive layer contacts a lower surface of the first terminal connecting portion.

2. The semiconductor device according to claim 1 , wherein the first control terminal connecting portion has a bonding wire that establishes an electrical connection between the control electrode of the first semiconductor element and the first external control terminal.

3. The semiconductor device according to claim 1 , wherein
the first control terminal connecting portion has:
a control wiring substrate including a control wiring layer connected to the first external control terminal; and
a bonding wire that electrically connects the control electrode of the first semiconductor element and the control wiring layer of the control wiring substrate.

4. The semiconductor device according to claim 3 , wherein the first external control terminal extends from the control wiring substrate to above the frame.

5. The semiconductor device according to claim 3 , wherein a resin member of the frame is provided between a lower surface of the control wiring substrate and an upper surface of the first terminal connecting portion.

6. The semiconductor device according to claim 3 , wherein an insulating portion of a lower surface of the control wiring substrate contacts an upper surface of the first terminal connecting portion.

7. The semiconductor device according to claim 2 , wherein
the first semiconductor element has a plurality of the control electrodes, and
each among a plurality of the first external control terminals electrically connected to each among the plurality of the control electrodes of the first semiconductor element is provided above at least one among wires between the first main electrode of the first semiconductor element and the first external terminal.

8. The semiconductor device according to claim 2 , wherein the bonding wire is wired in parallel with the first terminal connecting portion when seen in a top view.

9. The semiconductor device according to claim 1 , further comprising:
a second substrate that: is enclosed between a second side portion of the frame that is opposite to the first side portion and the first substrate; and has a second conductive layer at an upper surface thereof; and
a second semiconductor element that: is mounted on the second conductive layer; has, on a lower surface thereof, a first main electrode connected to the second conductive layer; and a second main electrode and a control electrode on an upper surface thereof, wherein
the second main electrode of the second semiconductor element and the first conductive layer are electrically connected.

10. The semiconductor device according to claim 9 , further comprising:
a second external control terminal provided: above a position between the second side portion of the frame and the second semiconductor element; or to the second side portion; and
a second control terminal connecting portion that establishes a connection between the control electrode of the second semiconductor element and the second external control terminal.

11. The semiconductor device according to claim 10 , wherein a plurality of sets each having: a first unit including the first external terminal, the first external control terminal, the first semiconductor element, the first terminal connecting portion and the first control terminal connecting portion; and a second unit including the second external control terminal, the second semiconductor element and the second control terminal connecting portion are arranged in parallel along the first side portion.

12. A semiconductor device comprising:
a frame;
a first external terminal that is provided to a first side portion of the frame;
a first substrate that is enclosed in the frame and has a first conductive layer at an upper surface thereof;
a first semiconductor element that: is mounted on the first conductive layer; has, on a lower surface thereof, a first main electrode connecting with the first conductive layer; and has a second main electrode and a control electrode on an upper surface thereof;
a first terminal connecting portion that establishes a connection between the first external terminal and an exposed portion of the first conductive layer between the first semiconductor element and the first external terminal;
a first external control terminal that is provided above a wire that is in the frame and between the first main electrode of the first semiconductor element and the first external terminal;
a first control terminal connecting portion that establishes a connection: between the control electrode of the first semiconductor element and the first external control terminal; and above the wire between the first main electrode of the first semiconductor element and the first external terminal;
a second substrate that: is enclosed between a second side portion of the frame that is opposite to the first side portion and the first substrate; and has a second conductive layer at an upper surface thereof;
a second semiconductor element that: is mounted on the second conductive layer; has, on a lower surface thereof, a first main electrode connected to the second conductive layer; and a second main electrode and a control electrode on an upper surface thereof;
a second external control terminal provided: above a position between the second side portion of the frame and the second semiconductor element; or to the second side portion;
a second control terminal connecting portion that establishes a connection between the control electrode of the second semiconductor element and the second external control terminal;
a third external terminal provided to at least one of: a third side portion of the frame between the first side portion and the second side portion; and a fourth side portion opposite to the third side portion;
a first conductive plate that is connected to the third external terminal and extends along the first side portion above the first substrate;
a fourth external terminal that is provided to at least one of the third side portion and the fourth side portion and closer to the second side portion than the third external terminal is; and
a second conductive plate that is connected to the fourth external terminal and extends along the second side portion above the second substrate, wherein
the second main electrode of the second semiconductor element and the first conductive layer ar

Assignees

• Fuji Electric Co Ltd

Inventors

• Soyano Shin

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10W76/47

  Solid or gel fillings · CPC title

• H10W72/5366

  the bond wires having kinks · CPC title

• H10W99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10W90/701

  characterised by the relative positions of pads or connectors relative to package parts · CPC title