Silicon addition for silicon nitride etching selectivity

Patent metadata

Field	Value
Publication number	US-10283370-B1
Application number	US-201815909790-A
Country	US
Kind code	B1
Filing date	Mar 1, 2018
Priority date	Mar 1, 2018
Publication date	May 7, 2019
Grant date	May 7, 2019

Abstract

Exemplary methods for selectively removing silicon nitride may include flowing a fluorine-containing precursor, and oxygen-containing precursor and a silicon-containing precursor into a local plasma to form plasma effluents. The plasma effluents may remove silicon nitride at significantly higher etch rates compared to exposed silicon oxide on the substrate. The methods may also remove silicon nitride more rapidly that silicon carbide and silicon oxycarbide which broadens the utility of the present technology to semiconductor applications.

First claim

The invention claimed is:

1. An etching method comprising:
flowing a fluorine-containing precursor into a substrate processing region of a semiconductor processing chamber;
flowing an oxygen-containing precursor into the substrate processing region;
flowing a silane into the substrate processing region, wherein a substrate is positioned within the substrate processing region and the substrate comprises an exposed portion of silicon nitride, an exposed portion of silicon oxide, and an exposed portion of a silicon-and-carbon containing material; wherein the silicon-and-carbon containing material comprises silicon carbide or silicon oxycarbide;
forming a local plasma having a local plasma power in the substrate processing region from the fluorine-containing precursor, the oxygen-containing precursor and the silane, wherein forming the local plasma produces plasma effluents;
applying bias plasma power to the substrate processing region, wherein applying the bias plasma power accelerates the plasma effluents towards the substrate, and wherein the bias plasma power is between about 20% and about 40% of a source power used to form the local plasma: and
selectively and directionally removing silicon nitride from the exposed portion of silicon nitride.

2. The method of claim 1 , wherein the local plasma is formed by applying an inductively-coupled source plasma power to the substrate processing region.

3. The method of claim 1 , wherein the selective and directional removal of silicon nitride removes silicon nitride at an etch rate more than twenty times faster than material is removed from the exposed portion of silicon oxide, and the exposed portion of the silicon-and-carbon containing material.

4. The method of claim 1 , wherein the selective and directional removal of silicon nitride is performed at a temperature of between 70° C. and 110° C.

5. The method of claim 1 , wherein the selective and directional removal of silicon nitride is performed at a pressure of between 0.1 mTorr and 100 mTorr.

6. The method of claim 1 , wherein a silicon-containing partial pressure of the silane is less than 75% of an oxygen-containing partial pressure of the oxygen-containing precursor.

7. The method of claim 1 , wherein the fluorine-containing precursor comprises fluorine, carbon, and hydrogen.

8. The method of claim 1 , wherein the local plasma power is between 100 W and 2 kW.

9. An etching method comprising:
combining a fluorine-and-carbon-containing precursor, an oxygen-containing precursor, and a silane in a substrate processing region, wherein a patterned substrate is disposed within the substrate processing region and has an exposed portion of silicon nitride, an exposed portion of a silicon-and-carbon containing material, and an exposed portion of silicon oxide;
wherein the silicon-and-carbon containing material comprises silicon carbide or silicon ox carbide;
forming a local plasma in the substrate processing region, wherein the local plasma is formed by applying a source plasma power to the combination of the fluorine-and-carbon-containing precursor, the oxygen-containing precursor, and the silane inside the substrate processing region;
applying a bias plasma power to the substrate processing region, wherein the bias power is between about 20% and about 40% of a plasma source forming the local plasma: and
selectively removing silicon nitride from the exposed portion of silicon nitride, wherein the patterned substrate temperature is maintained between about 70° C. and about 110° C. during the etching method.

10. The etching method of claim 9 , wherein the fluorine-and-carbon-containing precursor consists of fluorine, carbon and hydrogen.

11. The etching method of claim 9 , wherein the fluorine-and-carbon-containing precursor has one and only one carbon atom.

12. The etching method of claim 9 , wherein the fluorine-and-carbon-containing precursor is fluoromethane (CH 3 F).

13. The etching method of claim 9 , further comprising pulsing the source plasma power during the selective removal of silicon nitride.

14. The method of claim 9 , wherein the selective removal of silicon nitride removes silicon nitride at more than twenty times the rate silicon oxide is removed from the exposed portion of silicon oxide, and at more than twenty times the rate a silicon-and-carbon containing film is removed.

Assignees

• Applied Materials Inc

Inventors

• Ros Bengoechea Onintza
• Fung Nancy

Classifications

• H10P72/0421

  for drying etching · CPC title

• H10P50/644

  Anisotropic liquid etching (H10P50/61 takes precedence) · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/268

  of silicon-containing layers · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title