Method for making semimetal compound of Pt

US10280529B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10280529-B2
Application numberUS-201715642412-A
CountryUS
Kind codeB2
Filing dateJul 6, 2017
Priority dateSep 28, 2016
Publication dateMay 7, 2019
Grant dateMay 7, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The disclosure relates to a method for making semimetal compound of Pt. The semimetal compound is a single crystal material of PtSe 2 . The method comprises: placing pure Pt and pure Se in a reacting chamber as reacting materials; evacuating the reacting chamber to be vacuum less than 10 Pa; heating the reacting chamber to a first temperature of 600 degrees Celsius to 800 degrees Celsius and keeping for 24 hours to 100 hours; cooling the reacting chamber to a second temperature of 400 degrees Celsius to 500 degrees Celsius and keeping for 24 hours to 100 hours at a cooling rate of 1 degrees Celsius per hour to 10 degrees Celsius per hour to obtain a crystal material of PtSe 2 ; and separating the excessive reacting materials from the crystal material of PtSe 2 .

First claim

Opening claim text (preview).

What is claimed is: 1. A method for making semimetal compound of Pt, the method comprising: providing a quartz tube having an open end and a sealed end opposite to the open end; filling quartz slag in the quartz tube so that the quartz slag to form a support at the sealed end; filling quartz wool in the quartz tube so that the quartz wool to form a filter on the quartz slag; placing Pt and Se in the quartz tube as reacting materials, wherein a first purity of the Pt is greater than 99.9%, and a second purity of the Se is greater than 99.99%; evacuating the quartz tube to be vacuum with a pressure lower than 10 Pa; sealing the open end; vertically accommodating the quartz tube in a steel sleeve so that the reacting materials is located at a bottom of the quartz tube and the quartz slag and the quartz wool are located at a top of the quartz tube; heating the steel sleeve to a first temperature of 600 degrees Celsius to 800 degrees Celsius and keeping the first temperature for a first period of 24 hours to 100 hours; cooling the steel sleeve to a second temperature of 400 degrees Celsius to 500 degrees Celsius and keeping the second temperature for a second period of 24 hours to 100 hours at a cooling rate of 1 degrees Celsius per hour to 10 degrees Celsius per hour to obtain a reaction product comprising a crystal material of PtSe 2 ; and separating the crystal material of PtSe 2 from the reaction product by reversing the steel sleeve. 2. The method of claim 1 , wherein a molar ratio of Pt element and Se element is from 2:80 to 2:120. 3. The method of claim 2 , wherein the molar ratio of Pt element and Se element is 2:98. 4. The method of claim 1 , wherein the pressure is lower than 1 Pa. 5. The method of claim 1 , wherein the sealing the open end comprises fast heating the open end by a flame. 6. The method of claim 1 , wherein the vertically accommodating the quartz tube in the steel sleeve comprises filling fire-resistant cotton between the quartz tube and the steel sleeve. 7. The method of claim 1 , wherein the separating the crystal material of PtSe 2 from the reaction product further comprises centrifuging the reaction product. 8. The method of claim 7 , wherein a period of the centrifuging the reaction product is in a range from a minute to 5 minutes, and a speed of the centrifuging the reaction product is in a range of 2000 rpm to 3000 rpm.

Assignees

Inventors

Classifications

  • Particles characterised by their size · CPC title

  • Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth · CPC title

  • by IR- or Raman-data · CPC title

  • depicted by an image · CPC title

  • C01B19/007Primary

    Tellurides or selenides of metals (C01B19/002 takes precedence) · CPC title

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What does patent US10280529B2 cover?
The disclosure relates to a method for making semimetal compound of Pt. The semimetal compound is a single crystal material of PtSe 2 . The method comprises: placing pure Pt and pure Se in a reacting chamber as reacting materials; evacuating the reacting chamber to be vacuum less than 10 Pa; heating the reacting chamber to a first temperature of 600 degrees Celsius to 800 degrees Celsius and ke…
Who is the assignee on this patent?
Univ Tsinghua, Hon Hai Prec Ind Co Ltd
What technology area does this patent fall under?
Primary CPC classification C01B19/007. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue May 07 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).