Flowable gapfill using solvents

Patent metadata

Field	Value
Publication number	US-10280507-B2
Application number	US-201815978930-A
Country	US
Kind code	B2
Filing date	May 14, 2018
Priority date	Apr 17, 2017
Publication date	May 7, 2019
Grant date	May 7, 2019

Abstract

Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.

First claim

We claim:

1. A substrate processing chamber comprising:
a carrier gas supply;
an aerosol generator configured to receive a carrier gas from the carrier gas supply, wherein the aerosol generator comprises a piezoelectric transducer configured to produce aerosol droplets from a liquid solution, wherein the liquid solution is formed from a solvent and a precursor dissolved in the solvent;
a substrate processing region;
a vacuum pump configured to evacuate the substrate processing region;
a precursor conduit configured to receive the aerosol droplets and pass the aerosol droplets into the substrate processing region;
a local excitation source configured to receive and excite the aerosol droplets within the substrate processing region, wherein the local excitation source is a hot filament; and
a substrate pedestal disposed within the substrate processing region within the substrate processing chamber, wherein the substrate pedestal is configured to support a substrate during formation of a film on the substrate.

2. The substrate processing chamber of claim 1 wherein the precursor conduit is configured to pass the aerosol droplets into the substrate processing region through a top of the substrate processing region.

3. The substrate processing chamber of claim 1 wherein the piezoelectric transducer is in direct contact with the liquid solution.

4. The substrate processing chamber of claim 1 wherein the carrier gas supply is heated.

5. The substrate processing chamber of claim 1 further comprising a scrubber disposed downstream from the vacuum pump.

6. The substrate processing chamber of claim 1 wherein the precursor conduit comprises heated activated charcoal.

7. The substrate processing chamber of claim 1 wherein the substrate pedestal is a carbon block comprising carbon.

8. The substrate processing chamber of claim 7 wherein the carbon block consists of carbon.

9. The substrate processing chamber of claim 1 further comprising a remote plasma system configured to receive a gas, to form remote plasma effluents, and to flow the remote plasma effluents into the substrate processing region.

10. A substrate processing chamber comprising:
a carrier gas supply;
an aerosol generator configured to receive a carrier gas from the carrier gas supply, wherein the aerosol generator comprises a piezoelectric transducer configured to produce aerosol droplets from a liquid solution, wherein the liquid solution is formed from a solvent and a precursor dissolved in the solvent;
a substrate processing region;
a vacuum pump configured to evacuate the substrate processing region;
a precursor conduit configured to receive the aerosol droplets and pass the aerosol droplets into the substrate processing region;
a local excitation source configured to receive and excite the aerosol droplets within the substrate processing region, wherein the local excitation source is a microwave antenna; and
a substrate pedestal disposed within the substrate processing region within the substrate processing chamber, wherein the substrate pedestal is configured to support a substrate during formation of a film on the substrate.

11. The substrate processing chamber of claim 10 wherein the precursor conduit is configured to pass the aerosol droplets into the substrate processing region through a top of the substrate processing region.

12. The substrate processing chamber of claim 10 wherein the piezoelectric transducer is in direct contact with the liquid solution.

13. The substrate processing chamber of claim 10 wherein the carrier gas supply is heated.

14. The substrate processing chamber of claim 10 further comprising a scrubber disposed downstream from the vacuum pump.

15. The substrate processing chamber of claim 10 wherein the precursor conduit comprises heated activated charcoal.

16. The substrate processing chamber of claim 10 wherein the substrate pedestal is a carbon block comprising carbon.

17. The substrate processing chamber of claim 10 wherein the carbon block consists of carbon.

18. The substrate processing chamber of claim 10 further comprising a remote plasma system configured to receive a gas, to form remote plasma effluents, and to flow the remote plasma effluents into the substrate processing region.

Assignees

• Applied Materials Inc

Inventors

• Arnepalli Ranga Rao
• Thakare Darshan
• Mallick Abhijit Basu
• Manna Pramit
• Visser Robert Jan
• Goradia Prerna Sonthalia
• Bagul Nilesh Chimanrao

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/69393

  the material containing tantalum, e.g. Ta2O5 · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title