Monolithically integrated high voltage photovoltaics and light emitting diode with textured surface
US-9991408-B1 · Jun 5, 2018 · US
High voltage photovoltaics integrated with light emitting diode
US10276739B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10276739-B2 |
| Application number | US-201715468891-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 24, 2017 |
| Priority date | Mar 24, 2017 |
| Publication date | Apr 30, 2019 |
| Grant date | Apr 30, 2019 |
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- Title
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Abstract
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An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials.
First claim
Opening claim text (preview).
The invention claimed is: 1. An electrical device comprising: a material stack present on a supporting substrate; an LED device at a first end of the material stack having a first set of bandgap materials; and a photovoltaic device at a second end of the material stack having a second set of bandgap materials, the second end of the material stack being a light receiving end, wherein a widest bandgap material for the second set of bandgap material is greater than a highest bandgap material for the first set of bandgap materials; wherein the LED device is disposed directly between the supporting substrate and the photovoltaic device. 2. The electrical device of claim 1 , wherein the supporting substrate is comprised of n-type gallium nitride. 3. The electrical device of claim 2 , wherein the photovoltaic device comprises a p-type gallium nitride containing photovoltaic junction layer in direct contact with an n-type gallium nitride containing photovoltaic junction layer. 4. The electrical device of claim 3 , wherein the n-type gallium nitride containing photovoltaic junction layer is in direct contact with the LED device, the LED device including a p-type gallium nitride containing layer that is in direct contact with a first end of a multi quantum well and an n-type gallium nitride containing layer that is direct contact with an opposing second end of the multi quantum well. 5. The electrical device of claim 2 , wherein the photovoltaic device comprises a p-type aluminum gallium nitride containing photovoltaic junction layer in direct contact with an n-type aluminum gallium nitride containing photovoltaic junction layer. 6. The electrical device of claim 5 , wherein the n-type aluminum gallium nitride containing photovoltaic junction layer is in direct contact with the LED device, the LED device including a p-type gallium nitride containing layer that is in direct contact with a first end of a multi quantum well and an n-type gallium nitride containing layer that is direct contact with an opposing second end of the multi quantum well. 7. An electrical device comprising: a material stack present on a supporting substrate; an LED device at a first end of the material stack, the LED device having a first set of bandgap materials; and a photovoltaic device at a second end of the material stack having a second set of bandgap materials, the first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a widest bandgap material for the second set of bandgap materials; wherein the photovoltaic device comprises a p-type gallium nitride containing photovoltaic junction layer in direct contact with an n-type gallium nitride containing photovoltaic junction layer; and wherein the LED device is disposed directly between the supporting substrate and the photovoltaic device. 8. The electrical device of claim 7 , wherein the supporting substrate is comprised of n-type gallium nitride. 9. The electrical device of claim 8 , wherein the p-type gallium nitride containing photovoltaic junction layer is in direct contact with the LED device, the LED device including a p-type aluminum gallium nitride containing layer that is in direct contact with a first end of a multi quantum well and an n-type aluminum gallium nitride containing layer that is direct contact with an opposing second end of the multi quantum well, the n-type aluminum gallium nitride containing layer being in direct contact with the photovoltaic device.
Assignees
Inventors
Classifications
- H10W90/00Primary
Package configurations · CPC title
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L31/173Primary
Electricity · mapped topic
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- What does patent US10276739B2 cover?
- An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material fo…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10W90/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 30 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).