Silicon heterojunction photovoltaic device with wide band gap emitter
US-2017309768-A1 · Oct 26, 2017 · US
Monolithically integrated high voltage photovoltaics and light emitting diode with textured surface
US9985164B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9985164-B1 |
| Application number | US-201715832926-A |
| Country | US |
| Kind code | B1 |
| Filing date | Dec 6, 2017 |
| Priority date | Apr 13, 2017 |
| Publication date | May 29, 2018 |
| Grant date | May 29, 2018 |
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Abstract
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A method of forming an electrical device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a semiconductor substrate. The first conductivity type semiconductor material continuously extending along an entirety of the semiconductor substrate in a plurality of triangular shaped islands; and conformally forming a layer of type III-V semiconductor material having a second conductivity type on the plurality of triangular shaped islands to provide a textured surface of a photovoltaic device. A light emitting diode is formed on the textured surface of the photovoltaic device.
First claim
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The invention claimed is: 1. A method of forming an electrical device comprising: epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a substrate, the first conductivity type semiconductor material continuously extending along an entirety of the substrate in a plurality of triangular shaped islands; conformally forming a layer of type III-V semiconductor material having a second conductivity type on the plurality of triangular shaped islands for a textured surface of a photovoltaic device; and forming a light emitting diode on the textured surface of the photovoltaic device. 2. The method of claim 1 , wherein the substrate has a planar upper surface. 3. The method of claim 1 , wherein the substrate is comprised of silicon, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is gallium nitride. 4. The method of claim 1 , wherein the substrate is comprised of sapphire, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is gallium nitride. 5. The method of claim 1 , wherein the substrate is comprised of silicon, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum gallium nitride. 6. The method of claim 1 , wherein the substrate is comprised of sapphire, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum gallium nitride. 7. The method of claim 1 , wherein the substrate is comprised of silicon, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum nitride. 8. The method of claim 1 , wherein the substrate is comprised of sapphire, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum nitride. 9. A method of forming an electrical device comprising: forming a textured surface on a substrate, the textured surface including a plurality of triangular shaped peaks; conformally forming a first conductivity type III-V semiconductor material on the textured surface of the substrate; conformally forming a second conductivity type III-V semiconductor material on the first conductivity type III-V semiconductor material to produce a textured surface for a photovoltaic device; and forming a light emitting diode on the textured surface of the photovoltaic device. 10. The method of claim 9 , wherein the substrate is comprised of silicon, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is gallium nitride. 11. The method of claim 9 , wherein the substrate is comprised of sapphire, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is gallium nitride. 12. The method of claim 9 , wherein the substrate is comprised of silicon, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum gallium nitride. 13. The method of claim 9 , wherein the substrate is comprised of sapphire, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum gallium nitride. 14. The method of claim 9 , wherein the substrate is comprised of silicon, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum nitride. 15. The method of claim 9 , wherein the substrate is comprised of sapphire, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum nitride.
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Package configurations · CPC title
Electricity · mapped topic
Electricity · mapped topic
- H01L31/147Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9985164B1 cover?
- A method of forming an electrical device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a semiconductor substrate. The first conductivity type semiconductor material continuously extending along an entirety of the semiconductor substrate in a plurality of triangular shaped islands; and conformally forming a layer of type III-V…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H01L31/147. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 29 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).