Copper alloy sputtering target

Patent metadata

Field	Value
Publication number	US-10276356-B2
Application number	US-201414434779-A
Country	US
Kind code	B2
Filing date	Feb 28, 2014
Priority date	Mar 7, 2013
Publication date	Apr 30, 2019
Grant date	Apr 30, 2019

Abstract

A copper alloy sputtering target having a composition comprising 1.0 to 5.0 at % of Mn, 0.1 to 4.0 at % of Al, and remainder being Cu and unavoidable impurities, wherein a compositional variation in a plane of the sputtering target is within 20%. The present invention provides a copper alloy sputtering target capable of forming a semiconductor element wiring material, particularly a stable and uniform seed layer which is free of aggregation during copper electroplating, and which has superior sputter deposition properties, and a semiconductor element wiring formed using the copper alloy sputtering target.

First claim

The invention claimed is:

1. A copper alloy sputtering target consisting of Cu, Mn and Al at a composition consisting of 1.0 to 5.0 at % of Mn, 0.1 to 4.0 at % of Al, and remainder being Cu, wherein a compositional variation of each of Mn and Al in a plane of the copper alloy sputtering target is within 20%.

2. The copper alloy sputtering target according to claim 1 , wherein a variation in a crystal grain size in a plane of the sputtering target is 6.0 μm or less.

3. The copper alloy sputtering target according to claim 2 , wherein a variation in conductivity in a plane of the sputtering target is 0.5% IACS or less.

4. The copper alloy sputtering target according to claim 3 , wherein a variation in Vickers hardness in a plane of the sputtering target is 3 Hv or less.

5. A method of producing a copper alloy sputtering target consisting of Cu, Mn and Al, wherein raw materials of Cu, Mn and Al are respectively prepared, the raw materials are adjusted to attain an intended alloy composition and thereafter melted and alloyed via an induction melting method under a vacuum atmosphere at a temperature of 1100° C. or higher, the alloyed molten metal is subsequently poured in a mold and thereafter cooled to 300° C. at a cooling rate of 30° C./min or more, the ingot is thereafter subject to processes of hot forging, hot rolling, cold rolling, and heat treatment to obtain a sputtering target material of a composition consisting of 1.0 to 5.0 at % of Mn, 0.1 to 4.0 at % of Al, and remainder being Cu, and the sputtering target material is additionally machined and processed into a target shape, wherein a compositional variation of each of Mn and Al in a plane of the copper alloy sputtering target is within 20%.

6. The copper alloy sputtering target according to claim 1 , wherein a variation in conductivity in a plane of the sputtering target is 0.5% IACS or less.

7. The copper alloy sputtering target according to claim 1 , wherein a variation in Vickers hardness in a plane of the sputtering target is 3 Hv or less.

Assignees

• Jx Nippon Mining & Metals Corp

Inventors

• Otsuki Tomio
• Nagata Kenichi

Classifications

• C23C14/3414 Primary

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

• C22F1/08

  of copper or alloys based thereon · CPC title

• H01J37/3429 Primary

  Plural materials · CPC title

• C22C1/02

  by melting {(C22C1/1036 takes precedence)} · CPC title

• C22C9/05

  with manganese as the next major constituent · CPC title