Spin torque oscillator having multiple fixed ferromagnetic layers or multiple free ferromagnetic layers
US-9729106-B2 · Aug 8, 2017 · US
US10276302B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10276302-B2 |
| Application number | US-201414769760-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 21, 2014 |
| Priority date | Feb 27, 2013 |
| Publication date | Apr 30, 2019 |
| Grant date | Apr 30, 2019 |
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Process for treating a magnetic structure, wherein it comprises the following steps: providing a magnetic structure comprising one first layer of magnetic material comprising a CoFeB alloy; irradiating the magnetic structure with light low-energy ions; and simultaneously holding the magnetic structure with a preset temperature profile and for a preset time.
Opening claim text (preview).
The invention claimed is: 1. A process for treating a magnetic structure, wherein it comprises the following steps: providing a magnetic structure comprising a stack of magnetic layers, at least one first layer of magnetic material comprising a CoFeB alloy being deposited on a substrate to form part of the stack; irradiating the magnetic structure with He+, H+, Ar+, Xe+, or Ga+ ions, which are emitted ions passing through the magnetic layers of the stack where they locally alter the structure by creating inter-atomic displacements, and are implanted deep in the substrate on which the stack was deposited, at a depth in the substrate between 100 nm and 300 nm; and simultaneously holding the magnetic structure at a preset temperature profile and for a preset time. 2. The process according to claim 1 , wherein the preset temperature is between 20° C. and 200° C. 3. The process according to claim 1 , wherein the preset temperature is between 15° C. and 40° C. 4. The process according to claim 1 , wherein the preset dine is less than or equal to 1 hour. 5. The process according to claim 1 , wherein the magnetic material is initially amorphous. 6. The process according to claim 1 , wherein the magnetic material is initially crystalline. 7. The process according to claim 1 wherein the ions have an energy of between 0.1 keV and 150 keV. 8. The process according to claim 1 , wherein, during the irradiation step, the ions are emitted at a dose of between 1×10 13 ions/cm 2 and 5×10 16 ions/cm 2 . 9. The process according to claim 1 , wherein, during the irradiation step, the ions bombard the magnetic structure via through-openings in a mask. 10. The process according to claim 1 , wherein the magnetic structure comprises at least one second layer of insulation in contact with the first layer of magnetic material. 11. The process according to claim 10 , wherein the magnetic structure comprises a stack of alternating first layers of magnetic material and second layers of insulation.
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