Synthetic CVD diamond

Patent metadata

Field	Value
Publication number	US-10273598-B2
Application number	US-96886210-A
Country	US
Kind code	B2
Filing date	Dec 15, 2010
Priority date	Dec 22, 2009
Publication date	Apr 30, 2019
Grant date	Apr 30, 2019

Abstract

The present disclosure relates to methods for synthesizing synthetic CVD diamond material and high quality synthetic CVD diamond materials.

First claim

The invention claimed is:

1. Synthetic CVD diamond material comprising single substitutional nitrogen (N s 0 ) at a concentration of greater than about 0.5 ppm and having a total integrated absorption in the visible range from 350 nm to 750 nm the synthetic CVD diamond material having a low concentration of defects other than N s 0 that absorb in the visible range from 350 nm to 750 nm,
wherein at least about 85% of the integrated absorption in the visible range from 350 nm to 750 nm is attributable to N s 0 .

2. Synthetic CVD diamond material according to claim 1 , having a hue angle greater than about 80° for a transmission pathlength of 1 mm.

3. Synthetic CVD diamond material according to claim 1 , wherein the material has a photoluminescence spectrum at 77 K using the 488 nm excitation of an argon-ion laser which shows a peak at from about 543.0 to about 543.2 nm, with an intensity ratio of this peak normalized to the 1st order diamond Raman of greater than about 0.005.

4. Synthetic CVD diamond material according to claim 1 , wherein the concentration of N s 0 is greater than about 2.5 ppm, as measured using the 270 nm peak using UV-visible absorption spectroscopy.

5. Synthetic CVD diamond material according to claim 1 , wherein the elemental concentration of individual chemical impurities other than nitrogen and hydrogen is less than 0.1 ppm.

6. Synthetic CVD diamond material according to claim 1 , wherein at least about 50% of the volume of the synthetic CVD diamond material is formed from a single growth sector.

7. Synthetic CVD diamond material according to claim 1 , having the colour parameters a* between −20 and 1; b* between 5 and 20; C* between 0 and 30 and L* between 40 and 100.

8. Synthetic CVD diamond material according to claim 1 , wherein the synthetic CVD diamond material is in the form of a freestanding entity having a thickness of greater than about 0.2 mm.

9. Synthetic CVD diamond material according to claim 1 , wherein the synthetic CVD diamond material is in the form of a layer having a thickness of about 0.5 mm or less.

10. Synthetic CVD diamond material according to claim 1 , wherein the synthetic CVD diamond material is in the form of a doublet.

11. A gemstone comprising synthetic CVD diamond material according to claim 1 .

12. An electronic device comprising synthetic CVD diamond material according to claim 1 .

Assignees

• Twitchen Daniel James
• Bennett Andrew Michael
• Khan Rizwan Uddin Ahmad
• Martineau Philip Maurice
• Element Six Tech Ltd

Inventors

• Twitchen Daniel James
• Bennett Andrew Michael
• Khan Rizwan Uddin Ahmad
• Martineau Philip Maurice

Classifications

• C01B32/26

  Preparation (by using ultra-high pressure B01J3/06; by crystal growth C30B29/04) · CPC title

• C30B25/165

  the flow of the reactive gases · CPC title

• C30B29/04 Primary

  Diamond · CPC title

• C30B25/20

  the substrate being of the same materials as the epitaxial layer · CPC title

• C01B32/25

  Diamond · CPC title