Solder alloy, and LED module

US10272527B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10272527-B2
Application numberUS-201515300929-A
CountryUS
Kind codeB2
Filing dateApr 2, 2015
Priority dateApr 2, 2014
Publication dateApr 30, 2019
Grant dateApr 30, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Provided is a solder alloy having a composition suitable for soldering a module obtained by joining an aluminum substrate to a component wherein a main body, in which the area of an electrode on a side surface is not more than 30% of the total area of the side surface, is comprised of a ceramic. The solder alloy has an alloy composition comprising, in terms of mass %, 3-10% of Sb, 0-4% of Ag and 0.3-1.2% of Cu, with the remainder consisting of Sn. Furthermore, the alloy composition may contain, in terms of mass %, a total of 0.15% or less of one or more elements selected from among Ni and Co and/or a total of 0.02% or less of one or more elements selected from among P and Ge.

First claim

Opening claim text (preview).

The invention claimed is: 1. A solder alloy for use in a module in which a component and an Al substrate are bonded, the component having a main body made of ceramic and having a side-surface electrode with an area of not more than 30% of an entire area of a side surface, the solder alloy consisting of, by mass %: 0 to 4% of Ag; 0.3 to 1.2% of Cu; 3 to 10% of Sb, optionally not more than 0.15% in total of at least one element selected from Ni and Co, optionally not more than 0.1% in total of at least one element selected from P and Ge, and a balance of Sn. 2. The solder alloy according to claim 1 , comprising, by mass %, not more than 0.15% in total of at least one element selected from Ni and Co. 3. The solder alloy according to claim 2 , wherein a minimum shear stress is 15 MPa or higher. 4. The solder alloy according to claim 2 , further comprising, by mass %, not more than 0.1% in total of at least one element selected from P and Ge. 5. The solder alloy according to claim 4 , wherein a minimum shear stress is 15 MPa or higher. 6. The solder alloy according to claim 4 , wherein an average shear stress is 25 MPa or higher. 7. The solder alloy according to claim 6 , wherein a minimum shear stress is 15 MPa or higher. 8. The solder alloy according to claim 2 , wherein an average shear stress is 25 MPa or higher. 9. The solder alloy according to claim 8 , wherein a minimum shear stress is 15 MPa or higher. 10. The solder alloy according to claim 1 , comprising, by mass %, not more than 0.1% in total of at least one element selected from P and Ge. 11. The solder alloy according to claim 10 , wherein an average shear stress is 25 MPa or higher. 12. The solder alloy according to claim 11 , wherein a minimum shear stress is 15 MPa or higher. 13. The solder alloy according to claim 10 , wherein a minimum shear stress is 15 MPa or higher. 14. The solder alloy according to claim 1 , wherein an average shear stress is 25 MPa or higher. 15. The solder alloy according to claim 14 , wherein a minimum shear stress is 15 MPa or higher. 16. The solder alloy according to claim 1 , wherein a minimum shear stress is 15 MPa or higher. 17. The solder alloy according to claim 1 , wherein the component is an LED component. 18. An LED module in which an LED component having the solder alloy according to claim 1 is mounted. 19. An LED module in which an LED component and an Al substrate are bonded with the solder alloy according to claim 1 , the LED component having a ceramic substrate and a light emitting device disposed on the ceramic substrate, being cut at a through-hole via portion in the ceramic substrate after the light emitting device is molded, and having a side-surface electrode with an area of not more than 30% of an entire area of a side surface, and the Al substrate having an insulation layer formed thereon and a Cu electrode formed on the insulation layer.

Assignees

Inventors

Classifications

  • between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

  • comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

  • Bond pads having multiple stacked layers · CPC title

  • Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps · CPC title

  • Soldering or alloying · CPC title

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What does patent US10272527B2 cover?
Provided is a solder alloy having a composition suitable for soldering a module obtained by joining an aluminum substrate to a component wherein a main body, in which the area of an electrode on a side surface is not more than 30% of the total area of the side surface, is comprised of a ceramic. The solder alloy has an alloy composition comprising, in terms of mass %, 3-10% of Sb, 0-4% of Ag an…
Who is the assignee on this patent?
Senju Metal Industry Co
What technology area does this patent fall under?
Primary CPC classification B23K35/262. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Apr 30 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).