Rework process and tool design for semiconductor package

Patent metadata

Field	Value
Publication number	US-10269762-B2
Application number	US-201514926780-A
Country	US
Kind code	B2
Filing date	Oct 29, 2015
Priority date	Oct 29, 2015
Publication date	Apr 23, 2019
Grant date	Apr 23, 2019

Abstract

A rework process includes attaching a first bond head to a first semiconductor package. The contact pads of the first semiconductor package are bonded to contact pads of a second semiconductor package by solder joints. The rework process further includes performing a first local heating process to melt the solder joints, removing the first semiconductor package using the first bond head, and removing at least a portion of solder from the contact pads of the second semiconductor package.

First claim

What is claimed is:

1. A rework process comprising:
attaching a first bond head to a first semiconductor package, contact pads of the first semiconductor package being bonded to contact pads of a second semiconductor package, wherein the second semiconductor package comprises a keep out zone less than about 150 μm, by solder joints;
performing a first local heating process to melt the solder joints;
removing the first semiconductor package using the first bond head;
performing a second local heating process to melt the solder on the contact pads of the second semiconductor package, wherein the first local heating process and the second local heating process are performed continuously without a time gap in between;
positioning a solder-wettable piece on the contact pads of the second semiconductor Package; and
removing at least a portion of solder from the contact pads of the second semiconductor package by removing the solder-wettable piece from the contact pads of the second semiconductor package.

2. The rework process of claim 1 , further comprising:
after the removing at least a portion of solder from the contact pads of the second semiconductor package, bonding a third semiconductor package to the contact pads of the second semiconductor package, the third semiconductor package being of a same type as the first semiconductor package.

3. The rework process of claim 1 , further comprising:
after the removing at least a portion of solder from the contact pads of the second semiconductor package, bonding the first semiconductor package to the contact pads of the second semiconductor package.

4. The rework process of claim 1 , wherein the performing the first and second local heating processes comprises melting the solder joints using a heat source selected from the group consisting essentially of an infrared radiation source, a hot air, a laser, and combinations thereof.

5. The rework process of claim 1 , wherein the positioning the solder-wettable piece and the removing the solder-wettable piece are performed using a second bond head attached to the solder-wettable piece.

6. The rework process of claim 1 , wherein the positioning the solder-wettable piece and the removing the solder-wettable piece are performed using the first bond head.

7. The rework process of claim 1 , further comprising:
before the positioning the solder-wettable piece on the contact pads of the second semiconductor package, applying flux on a lower surface of the solder-wettable piece.

8. A rework process comprising:
performing a first local heating process to melt solder joints disposed between contact pads of a first semiconductor package and micro bump pads of a second semiconductor package, wherein the second semiconductor package comprises a keep out zone less than about 150 μm;
removing the first semiconductor package using a bond head attached to the first semiconductor package by a vacuum;
performing a second local heating process to melt solder on the micro bump pads, wherein the first and the second local heating processes comprise a continuous local heating process, the continuous local heating process lasting throughout the step of removing the first semiconductor package and the following solder removal process;
performing a solder removal process to remove melted solder from the micro bump pads, the solder removal process removing solder bridges from the micro bump pads; and
bonding a replacement semiconductor package to the micro bump pads.

9. The rework process of claim 8 , wherein the performing the solder removal process comprises:
contacting a solder-wettable piece with the melted solder on the micro bump pads; and
removing the solder-wettable piece from the micro bump pads.

10. The rework process of claim 1 , wherein the second local heating process is performed for a shorter period of time than the first local heating process.

11. The rework process of claim 5 , wherein the solder-wettable piece is heated by a built-in heating element of the second bond head before the second local heating process.

12. The rework process of claim 9 , further comprising applying flux to a surface of the solder-wettable piece before contacting the solder-wettable piece with the melted solder.

13. A rework process comprising:
performing a first heating process to melt solder joints disposed between contact pads of a first device and contact pads of a second device, wherein the second semiconductor package comprises a keep out zone less than about 150 μm and wherein melted solder joints form a solder region;
removing the first device from the second device, wherein portions of the solder region remain on the contact pads of the second device after removing the first device;
performing a second heating process to heat the solder region after removing the first device, such that the first and the second heating processes comprise a continuous local heating process; and
reducing a volume of the solder region on the contact pads of the second device using a solder-wettable piece attached to a first bond head.

14. The rework process of claim 13 , wherein reducing the volume of the solder region comprises:
contacting the solder-wettable piece with the solder region; and
moving the solder-wettable piece away from the second device after contacting the solder-wettable piece with the solder region.

15. The rework process of claim 13 , further comprising attaching a third device to the contact pads of the second device after reducing the volume of the solder region.

16. The rework process of claim 1 , wherein the solder-wettable piece comprises Cu, Ag, Ni, Pb, Au, Pd, Rh, or Cd.

17. The rework process of claim 1 , wherein the solder-wettable piece is about the same size as an area proximate the top surface of the second semiconductor package that is occupied by the contact pads of the second semiconductor package.

18. The rework process of claim 8 , wherein the first local heating process is performed at a temperature from a melting point of the solder to a temperature about 60° C. to 80° C. above the melting point of the solder.

19. The rework process of claim 8 , wherein the first local heating process is performed for about 1 second to about 60 seconds.

20. The rework process of claim 13 , wherein the solder-wettable piece is dipped into flux using the first bond head prior to reducing the volume of the solder region.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lin Shih Ting
• Huang Justin
• Tsai Tsung-Fu
• Lin Jing-Cheng
• Yu Chen-Hua

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/9413

  on encapsulations · CPC title

• H10W72/07211

  Treating the bond pad before connecting, e.g. by applying flux or cleaning · CPC title

• H10W72/07141

  Means for applying energy, e.g. ovens or lasers · CPC title