Transistor with fluorinated graphene spacer

Patent metadata

Field	Value
Publication number	US-10263080-B2
Application number	US-201715672017-A
Country	US
Kind code	B2
Filing date	Aug 8, 2017
Priority date	May 24, 2017
Publication date	Apr 16, 2019
Grant date	Apr 16, 2019

Abstract

An integrated circuit (IC) device may include a semiconductor structure. The semiconductor structure may include a source contact, a drain contact, and a gate. A first fluorocarbon spacer may be between the gate and the source contact. A second fluorocarbon spacer may be between the gate and the drain contact.

First claim

What is claimed is:

1. An integrated circuit (IC) device, comprising:
a semiconductor structure;
a source contact on the semiconductor structure;
a drain contact on the semiconductor structure;
a gate on the semiconductor structure;
a first fluorocarbon spacer between the gate and the source contact; and
a second fluorocarbon spacer between the gate and the drain contact, the first fluorocarbon spacer and the second fluorocarbon spacer contacting sidewalls of the gate.

2. The IC device of claim 1 , in which the semiconductor structure is a fin.

3. The IC device of claim 1 , further comprising low-K spacer material between the first fluorocarbon spacer and the source contact, and between the second fluorocarbon spacer and the drain contact.

4. The IC device of claim 3 , in which the low-K spacer material comprises silicon boron carbon nitride (SiBCN).

5. The IC device of claim 1 , in which the first fluorocarbon spacer and the second fluorocarbon spacer comprise fluorographene spacers.

6. The IC device of claim 1 , in which a thickness of the first fluorocarbon spacer is at least 0.3 nanometers.

7. The IC device of claim 1 , in which the semiconductor structure comprises a planar transistor structure or a gate all around (GAA) transistor structure.

8. The IC device of claim 1 , integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.

Assignees

• Qualcomm Inc

Inventors

• Lu Ye
• Bao Junjing
• Yang Bin
• Ge Lixin
• Yue Yun

Classifications

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/6902

  composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H01L29/1606 Primary

  Electricity · mapped topic

• H01L21/02271

  Electricity · mapped topic