Formation of a transition metal nitride

Patent metadata

Field	Value
Publication number	US-10262896-B2
Application number	US-201715659507-A
Country	US
Kind code	B2
Filing date	Jul 25, 2017
Priority date	Aug 9, 2016
Publication date	Apr 16, 2019
Grant date	Apr 16, 2019

Abstract

A use of an amine-containing silane for forming a transition metal nitride is provided. In this use, the amine of the amine-containing silane is the source of at least some, preferably most and most preferably all of the nitrogen present in the transition metal nitride.

First claim

What is claimed is:

1. A method for forming a barrier layer against diffusion of a fill metal, comprising:
providing a substrate comprising a dielectric material region;
contacting an amine-containing silane with the dielectric material region; and
reacting a transition metal or a transition metal precursor with the amine-containing silane, with the proviso that the transition metal precursor is not a manganese nitride, whereby a transition metal nitride is formed, wherein the reacting the transition metal or the transition metal precursor with the amine-containing silane comprises:
contacting the transition metal or the transition metal precursor with the amine containing silane; and thereafter
exposing the transition metal or the transition metal precursor to a temperature above room temperature.

2. The method of claim 1 , wherein the temperature is from 150° C. to 450° C.

3. The method of claim 1 , wherein the temperature is from 200° C. to 400° C.

4. The method of Claim 1 , wherein the transition metal is selected from the group consisting of manganese, cobalt, and ruthenium.

5. The method of claim 1 , wherein the dielectric material region is a low-k dielectric material region.

6. The method of claim 5 , wherein the low-k dielectric material is a silicon-based low-k material.

7. The method of claim 6 , wherein the silicon-based low-k material has a carbon content of 25 at. % or more.

8. The method of claim 6 , wherein the silicon-based low-k material has an oxygen content of 10 at. % or lower.

9. The method of claim 1 , wherein the transition metal nitride forms at least part of a barrier layer against diffusion of a fill metal in a damascene process.

10. The method of claim 9 , wherein the fill metal is copper.

11. The method of claim 10 , wherein the amine-containing silane is [3-(2-aminoethylamino)propyl]trimethoxysilane or (3-aminopropyl)trimethoxysilane.

12. The method of claim 1 , wherein the dielectric material region comprises an exposed opening.

13. A structure for use in a formation of interconnects, comprising:
a substrate comprising a dielectric material region, the dielectric material region comprising an opening; and
a barrier layer comprising a transition metal nitride, the barrier layer overlaying the opening and being formed by first contacting an amine-containing silane with the dielectric material region, and then reacting a transition metal or a transition metal precursor with the amine-containing silane, with the proviso that the transition metal precursor is not a manganese nitride,
wherein the structure is prepared according to the method of claim 1 .

14. The structure of claim 13 , wherein the transition metal is selected from the group consisting of cobalt and ruthenium.

Assignees

• Imec Vzw

Inventors

• Armini Silvia

Classifications

• H10W20/0526

  by thermal treatment thereof · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/096

  by contacting with gases, liquids or plasmas · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/076

  in via holes or trenches · CPC title