Organic thin film transistors

Patent metadata

Field	Value
Publication number	US-10256407-B2
Application number	US-201815876596-A
Country	US
Kind code	B2
Filing date	Jan 22, 2018
Priority date	Sep 24, 2012
Publication date	Apr 9, 2019
Grant date	Apr 9, 2019

Abstract

In one aspect, organic thin film transistors are described herein. In some embodiments, an organic thin film transistor comprises a source terminal, a drain terminal and a gate terminal; a dielectric layer positioned between the gate terminal and the source and drain terminals; and a vibrationally-assisted drop-cast organic film comprising small molecule semiconductor in electrical communication with the source terminal and drain terminal, wherein the transistor has a carrier mobility (μ eff ) of at least about 1 cm 2 /V·s.

First claim

The invention claimed is:

1. An organic thin film transistor comprising:
a source terminal, a drain terminal and a gate terminal;
a dielectric layer positioned between the gate terminal and the source and drain terminals; and
an organic film comprising small molecule semiconductor in electrical communication with the source terminal and drain terminal,
wherein the organic thin film transistor has an interfacial trap density of less than 1E 12 cm −2 −eV −1 and a work function alteration layer is positioned between at least one of the source terminal or drain terminal and the organic film.

2. The organic thin film transistor of claim 1 , wherein the interfacial trap density is less than 1E 11 cm −2 −eV −1 .

3. The organic thin film transistor of claim 1 , wherein the interfacial trap density is 1-9E 11 cm −2 −eV −1 .

4. The organic thin film transistor of claim 1 , wherein the interfacial trap density is 3-8E 11 cm −2 −eV −1 .

5. The organic thin film transistor of claim 1 , wherein the interfacial trap density is 4-7E 11 cm −2 −eV −1 .

6. The organic thin film transistor of claim 1 , wherein the interfacial trap density is 5-9E 11 cm −2 −eV −1 .

7. The organic thin film transistor of claim 1 , wherein the work function alteration layer is positioned between the source terminal and the organic film, and between the drain terminal and the organic film.

8. The organic thin film transistor of claim 1 , wherein the small molecule semiconductor comprises one or more substituted or unsubstituted acenes selected from a group consisting of naphthalene, anthracene, tetracene, pentacene, hexacene, and heptacene.

9. The organic thin film transistor of claim 1 , wherein the small molecule semiconductor comprises a structure of Formula (I):

wherein Z is selected from the group consisting of Si and Ge,
R 1 -R 6 are independently selected from the group consisting of C 1-20 alkyl and C 1-20 alkenyl, and
R 7 is selected from a group consisting of F, H, —CN.

10. The organic thin film transistor of claim 1 , wherein the small molecule semiconductor comprises 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene [diF-TES-ADT], 2,8-difluoro-5,11-bis(triisopropylsilylethynyl) anthradithiophene [diF-TIPS-ADT], triethylgermylethynyl-substituted anthradithiophene [diF-TEG ADT], 2,8-difluoro-5,11-bis(tri-sec-butylsilylethynyl)difluoro anthradithiophene, or any combination thereof.

11. The organic thin film transistor of claim 1 , wherein the small molecule semiconductor comprises a structure of Formula (II):

wherein Z is selected from the group consisting of Si and Ge,
R 7 -R 12 are independently selected from the group consisting of C 1-20 alkyl and C 1-20 alkenyl, and
R 13 -R 20 are independently selected from the group consisting of hydrogen, halogen, cyano, alkyl, alklenyl, alkynyl, aryl and heteroaryl.

12. The organic thin film transistor of claim 1 , wherein the small molecule semiconductor comprises 6,13-bis(triisopropylsilylethynyl)pentacene, 1,2,3,4-tetrafluoro-5,11-bis(triisopropylsilylethynyl)pentacene [F4 TIPS Pn], F2 TIPS Pn, F8 TIPS Pn, or any combination thereof.

13. The organic thin film transistor of claim 1 , wherein the small molecule semiconductor comprises a structure of Formula (III):

wherein Z is selected from the group consisting of Si and Ge, and
R 21 -R 26 are independently selected from the group consisting of C 1-20 alkyl and C 1-20 alkenyl.

14. The organic thin film transistor of claim 1 , wherein the small molecule semiconductor comprises 2,8-difluoro-5,11-bis(tri-sec-butylsilylethynyl) pentacenedithiophene.

15. The organic thin film transistor of claim 1 , wherein the small molecule semiconductor comprises a structure of Formula (IV):

wherein Z is selected from the group consisting of Si and Ge, and
R 27 -R 32 are independently selected from the group consisting of C 1-20 alkyl and C 1-20 alkenyl.

16. An organic thin film transistor comprising:
a source terminal, a drain terminal and a gate terminal;
a dielectric layer positioned between the gate terminal and the source and drain terminals; and
an organic film comprising small molecule semiconductor in electrical communication with the source terminal and drain terminal,
wherein the organic thin film transistor has an interfacial trap density of less than 1E 12 cm −2 −eV −1 and the small molecule semiconductor comprises a structure of Formula (I):

wherein Z is selected from the group consisting of Si and Ge,
R 1 -R 6 are independently selected from the group consisting of C 1-20 alkyl and C 1-20 alkenyl, and
R 7 is selected from a group consisting of F, H, —CN.

17. An organic thin film transistor comprising:
a source terminal, a drain terminal and a gate terminal;
a dielectric layer positioned between the gate terminal and the source and drain terminals; and
an organic film comprising small molecule semiconductor in electrical communication with the source terminal and drain terminal,
wherein the organic thin film transistor has an interfacial trap density of less than 1E 12 cm −2 −eV −1 and the small molecule semiconductor comprises a structure of Formula (II):

wherein Z is selected from the group consisting of Si and Ge,
R 7 -R 12 are independently selected from the group consisting of C 1-20 alkyl and C 1-20 alkenyl, and

R 13 -R 20 are independently selected from the group consisting of hydrogen, halogen, cyano, alkyl, alklenyl, alkynyl, aryl and heteroaryl.

18. An organic thin film transistor comprising:
a source terminal, a drain terminal and a gate terminal;
a dielectric layer positioned between the gate terminal and the source and drain terminals; and
an organic film comprising small molecule semiconductor in electrical communication with the source terminal and drain terminal,
wherein the organic thin film transistor has an interfacial trap density of less than 1E 12 cm −2 −eV −1 and the small molecule semiconductor comprises a structure of Formula (III):

wherein Z is selected from the group consisting of Si and Ge, and

R 21 -R 26 are independently selected from the group consisting of C 1-20 alkyl and C 1-20 alkenyl.

19. An organic thin film transistor comprising:
a source terminal, a drain terminal and a gate terminal;
a dielectric layer positioned between the gate terminal and the source and drain terminals; and
an organic film comprising small molecule semiconductor in electrical communication with the source terminal and drain terminal,
wherein the organic thin film transistor has an interfacial trap density of less than 1E 12 cm −2 −eV −1 and the small molecule semiconductor comprises a structure of Formula (IV):

Assignees

• Univ Wake Forest

Inventors

• Jurchescu Oana Diana
• Diemer Peter James

Classifications

• H01L51/4253

  Electricity · mapped topic

• H01L51/0001

  Electricity · mapped topic

• H01L51/442

  Electricity · mapped topic

• H01L51/0003 Primary

  Electricity · mapped topic

• Y02P70/521

  Cross-Sectional Technologies · mapped topic