Monolithically integrated high voltage photovoltaics and light emitting diode with textured surface

Patent metadata

Field	Value
Publication number	US-10256365-B2
Application number	US-201815948593-A
Country	US
Kind code	B2
Filing date	Apr 9, 2018
Priority date	Apr 13, 2017
Publication date	Apr 9, 2019
Grant date	Apr 9, 2019

Abstract

A method of forming an electrical device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a semiconductor substrate. The first conductivity type semiconductor material continuously extending along an entirety of the semiconductor substrate in a plurality of triangular shaped islands; and conformally forming a layer of type III-V semiconductor material having a second conductivity type on the plurality of triangular shaped islands to provide a textured surface of a photovoltaic device. A light emitting diode is formed on the textured surface of the photovoltaic device.

First claim

The invention claimed is:

1. A method of forming an electrical device comprising:
epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a substrate that is first textured, the first conductivity type semiconductor material continuously extending along an entirety of the substrate in a plurality of triangular shaped islands;
conformally forming a layer of type III-V semiconductor material having a second conductivity type on the plurality of triangular shaped islands for a second textured surface of a photovoltaic device; and
forming a light emitting diode on the second textured surface of the photovoltaic device.

2. The method of claim 1 , wherein the first textured surface comprises a plurality of islands of triangular geometry.

3. The method of claim 1 , wherein the substrate is comprised of silicon, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is gallium nitride.

4. The method of claim 1 , wherein the substrate is comprised of sapphire, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is gallium nitride.

5. The method of claim 1 , wherein the substrate is comprised of silicon, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum gallium nitride.

6. The method of claim 1 , wherein the substrate is comprised of sapphire, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum gallium nitride.

7. The method of claim 1 , wherein the substrate is comprised of silicon, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum nitride.

8. The method of claim 1 , wherein the substrate is comprised of sapphire, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum nitride.

9. A method of forming an electrical device comprising:
forming a substrate having a first textured surface of a first plurality of triangular shaped peaks;
forming a second textured surface on the substrate, the second textured surface including a second plurality of triangular shaped peaks;
conformally forming a first conductivity type III-V semiconductor material on the second textured surface of the substrate;
conformally forming a second conductivity type III-V semiconductor material on the first conductivity type III-V semiconductor material to produce a third textured surface for a photovoltaic device; and
forming a light emitting diode on the third textured surface of the photovoltaic device.

10. The method of claim 9 , wherein the substrate is comprised of silicon, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is gallium nitride.

11. The method of claim 9 , wherein the substrate is comprised of sapphire, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is gallium nitride.

12. The method of claim 9 , wherein the substrate is comprised of silicon, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum gallium nitride.

13. The method of claim 9 , wherein the substrate is comprised of sapphire, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum gallium nitride.

14. The method of claim 9 , wherein the substrate is comprised of silicon, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum nitride.

15. The method of claim 9 , wherein the substrate is comprised of sapphire, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum nitride.

16. A electrical device comprising:
a first type III-V semiconductor material having a first conductivity type for a junction of a photovoltaic device in direct contact with a textured surface of the semiconductor substrate, the first type III-V semiconductor material having the first conductivity type is a continuous layer of triangular geometry islands that are in contact end to end that is present on correspondingly textured surface of the substrate;
a conformal layer of second type III-V semiconductor material having a second conductivity for the junction of the photovoltaic device is in direct contact with the first type III-V semiconductor material to provide a p-n junction, wherein the conformal layer over the continuous layer of triangular geometry islands provides a textured light receiving surface for the photovoltaic device; and
a light emitting diode present on the textured surface of the photovoltaic device.

17. The electrical device of claim 16 , wherein the textured surface of the substrate comprises a plurality of islands of triangular geometry.

18. The electrical device of claim 16 , wherein the substrate is comprised of silicon, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is gallium nitride, or the substrate is comprised of sapphire, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is gallium nitride.

19. The electrical device of claim 16 , wherein the substrate is comprised of silicon, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum gallium nitride, or the substrate is comprised of sapphire, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum gallium nitride.

20. The electrical device of claim 19 , wherein the substrate is comprised of silicon, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum nitride, or the substrate is comprised of sapphire, the first conductivity type is n-type, the second conductivity type is p-type and the type III-V semiconductor material layer is aluminum nitride.

Assignees

• IBM

Inventors

• Bedell Stephen W
• Li Ning
• Sadana Devendra K
• Shahidi Ghavam G

Classifications

• H10W90/00

  Package configurations · CPC title

• H01L31/1856

  Electricity · mapped topic

• H01L33/32

  Electricity · mapped topic

• H01L31/125

  Electricity · mapped topic

• H01L31/0693

  Electricity · mapped topic