Photodiodes and fabrication thereof
US-9087755-B2 · Jul 21, 2015 · US
US10249668B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10249668-B2 |
| Application number | US-201815946052-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 5, 2018 |
| Priority date | May 17, 2017 |
| Publication date | Apr 2, 2019 |
| Grant date | Apr 2, 2019 |
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There is provided an x-ray sensor ( 21 ) comprising an active detector region including a plurality of detector diodes ( 22 ) at a first side of the sensor, and a common junction termination ( 23 ) at a second opposite side of the sensor. Normally, this implies that the junction termination ( 23 ) is moved from the top side where the active detector area is located to the bottom side of the sensor, allowing for full utilization of the active detector area at the top side with detector diodes to the very edge of the sensor.
Opening claim text (preview).
The invention claimed is: 1. An x-ray sensor comprising: an active detector region including a plurality of detector diodes at a first side of the sensor; and a common junction termination at a second opposite side of the sensor, wherein the first side corresponds to an anode side of the sensor and the second side with the junction termination corresponds to a cathode side of the sensor, or wherein the first side corresponds to a cathode side of the sensor and the second side with the junction termination corresponds to an anode side of the sensor. 2. The x-ray sensor of claim 1 , wherein a region of the sensor extending along the side from the first side of the sensor to the second opposite side of the sensor and extending around the periphery of the active detector area is doped to provide a p-n junction isolation from the side edge surface of the sensor. 3. The x-ray sensor of claim 2 , wherein the doped region is provided with a guard electrode at the first side of the sensor to provide a guard structure. 4. The x-ray sensor of claim 1 , wherein the junction termination includes a Junction Termination Extension, JTE, and/or one or more Floating Field Rings, FFR. 5. The x-ray sensor of claim 1 , wherein the active detector area includes an array of detector diodes and the junction termination is configured for terminating the array of detector diodes. 6. An x-ray sensor comprising: an active detector region including a plurality of detector diodes, wherein a region of the sensor extending along the side edge of the sensor and extending around the periphery of the active detector area is doped to provide a p-n junction isolation from the side edge surface of the sensor and/or wherein the doped region is provided with a guard electrode at the first side of the sensor to provide a guard structure. 7. An x-ray detector system comprising an x-ray sensor of claim 1 . 8. An x-ray imaging system comprising an x-ray detector system of claim 7 .
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
X-ray, gamma-ray or corpuscular radiation imagers · CPC title
Coatings · CPC title
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