Electrostatic discharge device and manufacturing method thereof, array substrate, display panel and device

Patent metadata

Field	Value
Publication number	US-10249613-B2
Application number	US-201715736753-A
Country	US
Kind code	B2
Filing date	May 15, 2017
Priority date	Jul 22, 2016
Publication date	Apr 2, 2019
Grant date	Apr 2, 2019

Abstract

An electrostatic discharge device comprises a transistor with one of its source and drain serving as an input terminal of said device and the other serving as an output terminal. Said transistor comprises: a first conductive layer used as a first floating gate; a first insulating layer covering said first conductive layer; an active layer on said first insulating layer; a second insulating layer covering said active layer; a second conductive layer used as a second floating gate and on said second insulating layer; a third insulating layer covering said second conductive layer; a third conductive layer and a fourth conductive layer on said third insulating layer and on both sides of the active layer, said third conductive layer being isolated from the fourth conductive layer, wherein said third conductive layer serves as one of the source and the drain and said fourth conductive layer serves as the other.

First claim

The invention claimed is:

1. An electrostatic discharge device, comprising: a transistor with one of its source and drain serving as an input terminal of said electrostatic discharge device and the other of its source and drain serving as an output terminal of said electrostatic discharge device,
wherein said transistor comprises:
a first conductive layer used as a first floating gate;
a first insulating layer covering said first conductive layer;
an active layer disposed on said first insulating layer;
a second insulating layer covering said active layer;
a second conductive layer used as a second floating gate and disposed on said second insulating layer;
a third insulating layer covering said second conductive layer; and
a third conductive layer and a fourth conductive layer disposed on said third insulating layer and on both sides of the active layer, said third conductive layer and fourth conductive layer being isolated from each other;
wherein said third conductive layer serves as one of the source and the drain and said fourth conductive layer serves as the other of the source and the drain;
said first conductive layer, said third conductive layer, and said first insulating layer, second insulating layer and third insulating layer disposed between said first conductive layer and said third conductive layer form a first capacitor;
said first conductive layer, said fourth conductive layer, and said first insulating layer, second insulating layer and third insulating layer disposed between said first conductive layer and said fourth conductive layer form a second capacitor;
said second conductive layer, said third conductive layer, and said third insulating layer disposed between said second conductive layer and said third conductive layer form a third capacitor;
said second conductive layer, said fourth conductive layer, and said third insulating layer disposed between said second conductive layer and said fourth conductive layer form a fourth capacitor.

2. The electrostatic discharge device according to claim 1 , wherein
said first conductive layer and said second conductive layer are electrically connected to each other.

3. The electrostatic discharge device according to claim 2 , wherein
said transistor further comprises: a relay conductive layer disposed on said third insulating layer and isolated from said third conductive layer and said fourth conductive layer, and
wherein said first conductive layer and said second conductive layer are electrically connected to said relay conductive layer through corresponding via holes.

4. The electrostatic discharge device according to claim 1 , wherein said transistor further comprises:
a fourth insulating layer covering said third insulating layer, said third conductive layer and said fourth conductive layer; and
a fifth conductive layer disposed on said fourth insulating layer;
wherein said fifth conductive layer, said third conductive layer and said fourth insulating layer that is disposed between said fifth conductive layer and said third conductive layer form a fifth capacitor;
said fifth conductive layer, said fourth conductive layer and said fourth insulating layer that is disposed between said fifth conductive layer and said fourth conductive layer form a sixth capacitor.

5. The electrostatic discharge device according to claim 4 , wherein
at least one of said first conductive layer and said second conductive layer is electrically connected to said fifth conductive layer.

6. The electrostatic discharge device according to claim 5 , wherein
said transistor further comprises: a relay conductive layer disposed on said third insulating layer and isolated from said third conductive layer and said fourth conductive layer;
said fifth conductive layer and at least one of said first conductive layer and said second conductive layer are electrically connected to said relay conductive layer through corresponding via holes.

7. The electrostatic discharge device according to claim 4 , wherein said fifth conductive layer comprises an ITO layer or an Al layer.

8. An active array substrate comprising the electrostatic discharge device according to claim 1 .

9. The active array substrate according to claim 8 , wherein the input terminal of said electrostatic discharge device is connected to a gate line or a data line, and the output terminal of said electrostatic discharge device is grounded.

10. A display panel comprising the active array substrate according to claim 8 .

11. A display device comprising the display panel according to claim 10 .

12. A method for manufacturing an electrostatic discharge device, wherein said electrostatic discharge device comprises a transistor with one of its source and drain serving as an input terminal of said electrostatic discharge device and the other of its source and drain serving as an output terminal of said electrostatic discharge device, said method comprises:
forming a first conductive layer used as a first floating gate;
forming a first insulating layer covering said first conductive layer;
forming an active layer on said first insulating layer;
forming a second insulating layer covering said active layer;
forming a second conductive layer used as a second floating gate on said second insulating layer;
forming a third insulating layer covering said second conductive layer; and
forming a third conductive layer and a fourth conductive layer that are isolated from each other on said third insulating layer;
wherein said third conductive layer and fourth conductive layer are on both sides of the active layer, respectively, said third conductive layer serves as one of the source and the drain and said fourth conductive layer serves as the other of the source and the drain;
wherein said first conductive layer, said third conductive layer, and said first insulating layer, second insulating layer and third insulating layer disposed between said first conductive layer and said third conductive layer form a first capacitor;
said first conductive layer, said fourth conductive layer, and said first insulating layer, second insulating layer and third insulating layer disposed between said first conductive layer and said fourth conductive layer form a second capacitor;
said second conductive layer, said third conductive layer, and said third insulating layer disposed between said second conductive layer and said third conductive layer form a third capacitor;
said second conductive layer, said fourth conductive layer, and said third insulating layer disposed between said second conductive layer and said fourth conductive layer form a fourth capacitor.

13. The method according to claim 12 , further comprising electrically connecting said first conductive layer to said second conductive layer.

14. The method according to claim 13 , further comprising:
forming a first via hole penetrating said first insulating layer, said second insulating layer and said third insulating layer to reach said first conductive layer, and a second via hole penetrating said third insulating layer to reach said second conductive layer; and
forming a relay conductive layer on said third insulating layer, which is isolated from said third conductive layer and said fourth conductive layer and covers and fills said first via hole and second via hole.

15. The method according to claim 12 , further comprising:
forming a fourth insulating layer covering said third insulating layer, said third conductive layer and said fourth conductive layer; and
forming a fifth conductive layer on said fourth insulating layer,
wherein said fi

Assignees

• Boe Technology Group Co Ltd

Inventors

• Gai Cuili
• Wang Longyan
• Wang Ling
• Li Quanhu
• Lin Yi-Cheng

Classifications

• H10D84/01

  Manufacture or treatment · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H01L28/40

  Electricity · mapped topic

• H01L27/1255

  Electricity · mapped topic

• H01L27/0288

  Electricity · mapped topic